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Silicon nanowire

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Silicon nanowires, also referred to as SiNWs, are a type of nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Initial synthesis is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology.[1] SiNWs exhibit unique properties that arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. In particular SiNWs are frequently studied towards applications including photovoltaics, nanowire batteries, thermoelectrics and non-volatile memory.[2]

Applications

Owing to their unique physical and chemical properties, silicon nanowires are a promising candidate for a wide range of applications that draw on their unique physico-chemical characteristics, which differ from those of bulk Silicon material.[1]

SiNWs exhibit charge trapping behavior which renders such systems of value in applications necessitating electron hole separation such as photovoltaics, and photocatalysts.[3]

Charge trapping behaviour and tuneable surface governed transport properties of SiNWs render this category of nanostructures of interest towards use as Metal Insulator Semiconductors and Field Effect Transistors, with further applications as nanoelectronic storage devices,[4] in flash memory, logic devices as well as chemical and biological sensors.[2][5]

The ability for lithium ions to intercalate into silicon structures renders various Si nanostructures of interest towards applications as anodes in Li-ion batteries (LiBs). SiNWs are of particular merit as such anodes as they exhibit the ability to undergo significant lithiation while maintaining structural integrity and electrical connectivity.[6]

Synthesis

Several synthesis methods are known for SiNWs and these can be broadly divided into methods which start with bulk silicon and remove material to yield nanowires, also known as top-down synthesis, and methods which use a chemical or vapor precursor to build nanowires in a process generally considered to be bottom-up synthesis.[2]

Top Down Synthesis Methods

These methods use material removal techniques to produce nanostructures from a bulk precursor

Bottom-up Synthesis Methods

  • Vapour Liquid Solid Growth a type of catalysed CVD often applyed with silane precursors.[2]
  • Molecular Beam Epitaxy a form of PVD applied in plasma environment [8]
  • Precipitation from a solution Using crystal seeds, such as gold nanoparticles, SiNWs are grown from a heated supercritical Si containing solution [8][9]

Thermal Oxidation of Silicon Nanowires

Subsequent to physical or chemical processing, either top-down or bottom-up, to obtain initial silicon nanostructures, thermal oxidation steps are often applied in order to obtain materials with desired size and aspect ratio. Silicon nanowires exhibit a distinct and useful self-limiting oxidation behaviour whereby oxidation effectively ceases due to diffusion limitations, which can be modeled.[1] This phenomenon allows accurate control of dimensions and aspect rations in SiNWs and has been used to obtain high aspect ratio SiNWs with diameters below 5 nm.[10] The self limiting oxidation of SiNWs is of value towards lithium ion battery materials .

Orientation of Nanowires

The orientation of SiNWs has profound influence on the overall properties of systems. For this reason several procedures have been proposed for the alignment of nanowires in chosen orientations. This includes the use of electric fields in polar alignment, electrophoresis, mircofluidic methods and contact printing.

Outlook

There is significant interest in SiNWs for their unique properties and the ability to control size and aspect ratio with great accuracy. As yet, limitations in large-scale fabrication impede the uptake of this material in the full range of investigated applications. Combined studies of synthesis methods, oxidation kinetics and properties of SiNW systems aim to overcome the present limitations and facilitate the implementation of SiNW systems, for example, high quality vapor-liquid-solid–grown SiNWs with smooth surfaces can be reversibly stretched with 10% or more elastic strain, approaching the theoretical elastic limit of silicon, which could open the doors for the emerging “elastic strain engineering” and flexible bio-/nano-electronics. [11]

References

  1. ^ a b c Liu, M.; Peng, J.; et al. (2016). "Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires". Theoretical and Applied Mechanics Letters. 6 (5): 195–199. doi:10.1016/j.taml.2016.08.002. {{cite journal}}: Explicit use of et al. in: |last3= (help)
  2. ^ a b c d e Mikolajick, Thomas; Heinzig, Andre; Trommer, Jens; et al. (2013). "Silicon nanowires–a versatile technology platform". physica status solidi (RRL)-Rapid Research Letters. 7 (10): 793–799. {{cite journal}}: Explicit use of et al. in: |last4= (help)
  3. ^ Tsakalakos, L.; Balch, J.; Fronheiser, J.; Korevaar, B. (2007). "Silicon nanowire solar cells". Applied Physics Letter. 91 (23).
  4. ^ Tian, Bozhi; Xiaolin, Zheng; et al. (2007). "Coaxial silicon nanowires as solar cells and nanoelectronic power sources". Nature. 449 (7164): 885–889. {{cite journal}}: Explicit use of et al. in: |last3= (help)
  5. ^ Daniel, Shir; et al. (2006). "Oxidation of silicon nanowires". Journal of Vacuum Science & Technology (3): 1333–1336. {{cite journal}}: Explicit use of et al. in: |last2= (help)
  6. ^ Chan, C.; Peng, H.; et al. (2008). "High-performance lithium battery anodes using silicon nanowires". Nature nanotechnology. 3 (1): 31–35. {{cite journal}}: Explicit use of et al. in: |last3= (help)
  7. ^ Huang, Z.; Fang, H.; Zhu, J. (2007). "Fabrication of silicon nanowire arrays with controlled diameter, length, and density". Advanced materials. 19 (5): 744–748.
  8. ^ a b c Shao, M.; Duo Duo Ma, D.; Lee, ST (2010). "Silicon nanowires–synthesis, properties, and applications". European Journal of Inorganic Chemistry. 27: 4264–4278.
  9. ^ Holmes, J.; Keith, P.; Johnston, R.; Doty, C. (2000). "Control of thickness and orientation of solution-grown silicon nanowires". Science. 287 (5457): 1471–1473.
  10. ^ Liu, H.I.; Biegelsen, D.K.; Ponce, F.A.; Johnson, N.M.; Pease, R.F.W. "Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires". {{cite journal}}: Cite journal requires |journal= (help)
  11. ^ Zhang, H.; Tersoff, J.; Xu, S.; et al. (2016). "Approaching the ideal elastic strain limit in silicon nanowires". Science Advances. 2 (8): e1501382. {{cite journal}}: Explicit use of et al. in: |last4= (help)
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