Static induction transistor

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Static induction transistor (SIT) is a high power, high frequency transistor device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.


An SIT has:

  • short channel length
  • low gate series resistance
  • low gate-source capacitance
  • small thermal resistance
  • low noise
  • low distortion
  • high audio frequency power capability
  • short turn-on and turn-off time, typically 0.25 μs


The SIT was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.[1]

See also[edit]


  1. ^ F. Patrick McCluskey; Thomas Podlesak; Richard Grzybowski, eds. (1996). High Temperature Electronics. CRC Press. p. 82. ISBN 0-8493-9623-9.