Static induction transistor

From Wikipedia, the free encyclopedia
Jump to: navigation, search

Static induction transistor (SIT) is a high power, high frequency transistor device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.

Characteristics[edit]

An SIT has:

  • short channel length
  • low gate series resistance
  • low gate-source capacitance
  • small thermal resistance
  • low noise
  • low distortion
  • high audio frequency power capability
  • short turn-on and turn-off time, typically 0.25 μs

History[edit]

The SIT was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.[1]

See also[edit]

References[edit]