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The introduction looks excellent in most respects, but I feel it is a little misleading on the subject of Lilienfeld's contribution. "...conceived...by Julius Lilienfeld, and...practically implemented by...Bardeen...Brattain, and...Shockley" makes it sound like Lilienfeld did all the creative work and BBS were just his laboratory assistants. Were Bardeen, Brattain, and Shockley even aware of Lilienfeld's work? The Nobel was given to BBS, but the intro makes it sound like Lilienfeld also shared in it. L didn't even build a prototype. I think the intro should credit BBS as the inventors, but say Lilienfeld had the idea for the field-effect tran sister before them. --ChetvornoTALK 20:39, 6 March 2016 (UTC) ChetvornoTALK 20:39, 6 March 2016 (UTC)
Yes, it's completely misleading and should be taken out. Lilienfeld's idea was a field-effect device, completely unrelated to the point-contact junction device that was actually the first transistor. Lilienfeld deserves a mention in this article, but he really was not part of the thread that led to the first transistor being made. SpinningSpark 22:45, 6 March 2016 (UTC)
Yes, misleadingly stated. Lilienfeld's invention did come up as a big block to broad patent coverage on the transistor; Shockley tried to make a FET, but couldn't make it work at that time, due to surface charge problems; then the other guys came along and made the bipolar work. The relationship here is important, but hard to state correctly in so few words. Dicklyon (talk) 04:10, 7 March 2016 (UTC)
When I was reading the article, I noticed the ambiguity over Lilienfeld and the Nobel Prize. I've gone and changed the wording to remove the ambiguity by making the winners' names explicit. There might be a better way to phrase it than I've done but it's an improvement. Also, don't forget our unofficial motto: "Be bold". Jason Quinn (talk) 21:10, 25 March 2016 (UTC)
The statement that the SIT invented in 1950 was the first high frequency transistor or even that it was a high frequency transistor is in not supported by any of the references. What is supported is that as of the date of one reference’s publication (1996), Silicon Carbide SIT’s were faster than silicon devices. That the SIT was the fastest transistor through he 1980’s is not supported by any of the references. The references do confirm that the SIT was invented in 1950 by Watanabe and Nishizawa. Constant314 (talk) 22:19, 14 May 2017 (UTC)
I've reverted it for now. The McCluskey source says that experimental SITs were fabricated in 1975. High frequency transistors were certainly available in the 1960s, so claiming SITs as the first is dubious at best. Maybe it was the first HF design to be studied or published, but that would need a source saying so explicitly. SpinningSpark 22:35, 14 May 2017 (UTC)
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