TaB2 has the same hexagonal structure as most diborides (AlB2, MgB2, etc.). The mentioned borides have the following space groups: TaB (orthorhombic, Thallium(I) iodide-type, Cmcm), Ta5B6 (Cmmm), Ta3B4 (Immm), TaB2 (hexagonal, aluminum diboride-type, P6/mmm).
Tantalum boride films can be deposited from a gas mixture of TaCl5-BCl3-H2-Ar in the temperature range 540–800 °C. TaB2 (single-phase) is deposited at a source gas flow ratio (BCl3/TaCl5) of six and a temperature above 600 °C. TaB (single-phase) is deposited at BCl3/TaCl5 = 2–4 and T = 600–700 °C.
- S. Motojima et al. "Low-temperature deposition of TaB and TaB2 by chemical vapor deposition" J. Nucl. Mater. 105 (1982) 262
- S. Otani et al. "Floating zone growth and high-temperature hardness of NbB2 and TaB2 single crystals" J. Cryst. Growth 194 (1998) 430
- S. Okada et al. "Single crystals of TaB, Ta5B6, Ta3B4 and TAB2, as obtained from high-temperature metal solutions, and their properties" J. Cryst. Growth 128 (1993) 1120
- X. Chen et al. "Electronic and Structural Origin of Ultraincompressibility of 5d Transition-Metal Diborides" Phys. Rev. Lett. 100 (2008) 196403