Triethylgallium

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Triethylgallium
Triethylgallium 200.svg
Names
IUPAC name
triethylgallane
Systematic IUPAC name
triethylgallium
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.012.939
Properties
C6H15Ga
Molar mass 156.9 g/mol
Appearance clear colourless liquid
Melting point −82.3 °C (−116.1 °F; 190.8 K)
Boiling point 143 °C (289 °F; 416 K)
Reacts[1]
Hazards
Main hazards pyrophoric
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

Triethylgallium, Ga(C2H5)3, or TEGa, is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.

Properties[edit]

TEGa is a clear, colorless, pyrophoric liquid[2] and should be handled with caution.

Applications[edit]

TEGa can be a useful alternative to trimethylgallium in the metalorganic vapour phase epitaxy of compound semiconductors because films grown using TEGa have been shown to have a lower carbon impurity concentration.[3]

References[edit]

  1. ^ amdg.ece.gatech.edu/msds/mo/teg_epichem.pdf
  2. ^ Shenaikhatkhate, D; Goyette, R; Dicarlojr, R; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272: 816. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007. 
  3. ^ Saxler, A; Walker, D; Kung, P; Zhang, X; Razeghi, M; Solomon, J; Mitchel, W; Vydyanath, H (1997). "Comparison of trimethylgallium and triethylgallium for the growth of GaN". Applied Physics Letters. 71: 3272. Bibcode:1997ApPhL..71.3272S. doi:10.1063/1.120310.