Metal–nitride–oxide–semiconductor transistor: Difference between revisions
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The '''metal–nitride–oxide–semiconductor''' or '''metal–nitride–oxide–silicon''' ('''MNOS''') transistor is an alternative and supplement to the existing [[MOSFET|MOS technology]], wherein the insulation employed is a nitride-oxide layer.<ref>{{cite journal|last1=Frohman-Bentchkowsky|first1=D.|title=The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications|journal=Proceedings of the IEEE|date=1970|volume=58|issue=8|pages=1207–1219|doi=10.1109/PROC.1970.7897}}</ref><ref>{{cite web|title=Metal–nitride–oxide–semiconductor (MNOS) technology|url=https://www.jedec.org/standards-documents/dictionary/terms/metal-nitride-oxide-semiconductor-mnos-technology|publisher=JEDEC}}</ref> |
The '''metal–nitride–oxide–semiconductor''' or '''metal–nitride–oxide–silicon''' ('''MNOS''') transistor is a type of [[MOSFET]] (metal-oxide-semiconductor field-effect transistor) in which the [[oxide]] layer is replaced by a double layer of [[nitride]] and oxide.<ref>{{cite book |last1=Brodie |first1=Ivor |last2=Muray |first2=Julius J. |title=The Physics of Microfabrication |date=2013 |publisher=[[Springer Science & Business Media]] |isbn=9781489921604 |page=74 |url=https://books.google.com/books?id=GQYHCAAAQBAJ&pg=PA74}}</ref> It is an alternative and supplement to the existing standard [[MOSFET|MOS technology]], wherein the insulation employed is a nitride-oxide layer.<ref>{{cite journal|last1=Frohman-Bentchkowsky|first1=D.|title=The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications|journal=Proceedings of the IEEE|date=1970|volume=58|issue=8|pages=1207–1219|doi=10.1109/PROC.1970.7897}}</ref><ref>{{cite web|title=Metal–nitride–oxide–semiconductor (MNOS) technology|url=https://www.jedec.org/standards-documents/dictionary/terms/metal-nitride-oxide-semiconductor-mnos-technology|publisher=JEDEC}}</ref> It is used in [[non-volatile memory|non-volatile]] [[computer memory]].<ref>{{cite book|last1=Ng|first1=Kwok K.|title=Complete Guide to Semiconductor Devices|publisher=John Wiley & Sons, Inc.|isbn=9781118014769|pages=353–360|language=en|chapter=Metal-Nitride-Oxide Semiconductor Transistor|doi=10.1002/9781118014769.ch47|year=2010}}</ref> |
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It is used in [[non-volatile memory|non-volatile]] [[computer memory|computer memories]].<ref>{{cite book|last1=Ng|first1=Kwok K.|title=Complete Guide to Semiconductor Devices|publisher=John Wiley & Sons, Inc.|isbn=9781118014769|pages=353–360|language=en|chapter=Metal-Nitride-Oxide Semiconductor Transistor|doi=10.1002/9781118014769.ch47|year=2010}}</ref> |
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==See also== |
==See also== |
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* [[Charge trap flash]] |
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* [[Field-effect transistor]] |
* [[Field-effect transistor]] |
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* [[MISFET]] |
* [[MISFET]] |
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Revision as of 10:04, 12 October 2019
The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide.[1] It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer.[2][3] It is used in non-volatile computer memory.[4]
See also
References
- ^ Brodie, Ivor; Muray, Julius J. (2013). The Physics of Microfabrication. Springer Science & Business Media. p. 74. ISBN 9781489921604.
- ^ Frohman-Bentchkowsky, D. (1970). "The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications". Proceedings of the IEEE. 58 (8): 1207–1219. doi:10.1109/PROC.1970.7897.
- ^ "Metal–nitride–oxide–semiconductor (MNOS) technology". JEDEC.
- ^ Ng, Kwok K. (2010). "Metal-Nitride-Oxide Semiconductor Transistor". Complete Guide to Semiconductor Devices. John Wiley & Sons, Inc. pp. 353–360. doi:10.1002/9781118014769.ch47. ISBN 9781118014769.
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