Scanning voltage microscopy: Difference between revisions
Easily found academic papers describing the topic (mostly circa 2006 unsourced tag). I added the Update note for anyone more familiar with the topic to examine. |
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| ⚫ | {{Update|date=April 2021}}{{short description|Scientific experimental technique}}'''Scanning voltage microscopy''' ('''SVM'''), sometimes also called '''nanopotentiometry''', is a scientific experimental technique based on [[atomic force microscopy]]. A conductive probe, usually only a few [[Nanometre|nanometers]] wide at the tip, is placed in full contact with an operational [[electronics|electronic]] or [[optoelectronic]] sample. By connecting the probe to a high-[[electrical impedance|impedance]] [[voltmeter]] and rastering over the sample's surface, a map of the [[electric potential]] can be acquired. SVM is generally nondestructive to the sample although some damage may occur to the sample or the probe if the pressure required to maintain good electrical contact is too high. If the input impedance of the voltmeter is sufficiently large, the SVM probe should not perturb the operation of the operational sample.<ref name=":0">{{Cite book|last=Kalinin|first=Sergei V.|url=https://books.google.com/books?id=Ua8fxzc2kTwC&lpg=PR9&ots=webwwB3u-L&dq=%22Scanning%20voltage%20microscopy%22&lr&pg=PA562#v=onepage&q=%22Scanning%20voltage%20microscopy%22&f=false|title=Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale|last2=Gruverman|first2=Alexei|date=2007-04-03|publisher=Springer Science & Business Media|isbn=978-0-387-28668-6|pages=562-564|language=en}}</ref><ref>{{Citation|last=Kuntze|first=Scott B.|title=Scanning Voltage Microscopy|date=2007|url=https://doi.org/10.1007/978-0-387-28668-6_21|work=Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale|pages=561–600|editor-last=Kalinin|editor-first=Sergei|place=New York, NY|publisher=Springer|language=en|doi=10.1007/978-0-387-28668-6_21|isbn=978-0-387-28668-6|access-date=2021-04-22|last2=Ban|first2=Dayan|last3=Sargent|first3=Edward H.|last4=Dixon-Warren|first4=St. John|last5=White|first5=J. Kenton|last6=Hinzer|first6=Karin|editor2-last=Gruverman|editor2-first=Alexei}}</ref> |
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{{short description|Scientific experimental technique}} |
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{{Unreferenced|date=December 2006}} |
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| ⚫ | '''Scanning voltage microscopy''' ('''SVM'''), sometimes also called '''nanopotentiometry''', is a scientific experimental technique based on [[atomic force microscopy]]. A conductive probe, usually only a few [[Nanometre|nanometers]] wide at the tip, is placed in full contact with an operational [[electronics|electronic]] or [[optoelectronic]] sample. By connecting the probe to a high-[[electrical impedance|impedance]] [[voltmeter]] and rastering over the sample's surface, a map of the [[electric potential]] can be acquired. SVM is generally nondestructive to the sample although some damage may occur to the sample or the probe if the pressure required to maintain good electrical contact is too high. If the input impedance of the voltmeter is sufficiently large, the SVM probe should not perturb the operation of the operational sample. |
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==Applications== |
==Applications== |
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SVM is particularly well suited to analyzing [[microelectronic]] devices (such as [[transistor]]s or [[diode]]s) or [[quantum]] electronic devices (such as [[quantum well]] [[diode lasers]]) directly because nanometer spatial resolution is possible. SVM can also be used to verify theoretical simulation of complex electronic devices.{{ |
SVM is particularly well suited to analyzing [[microelectronic]] devices (such as [[transistor]]s or [[diode]]s) or [[quantum]] electronic devices (such as [[quantum well]] [[diode lasers]]) directly because nanometer spatial resolution is possible.<ref name=":0" /> SVM can also be used to verify theoretical simulation of complex electronic devices.<ref>{{Cite journal|last=Kuntze|first=S. B.|last2=Ban|first2=D.|last3=Sargent|first3=E. H.|last4=Dixon-Warren|first4=St J.|last5=White|first5=J. K.|last6=Hinzer|first6=K.|date=2005-04-01|title=Electrical Scanning Probe Microscopy: Investigating the Inner Workings of Electronic and Optoelectronic Devices|url=https://doi.org/10.1080/10408430590952523|journal=Critical Reviews in Solid State and Materials Sciences|volume=30|issue=2|pages=71–124|doi=10.1080/10408430590952523|issn=1040-8436}}</ref> |
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For example, the potential profile across the quantum well structure of a diode laser can be mapped and analyzed; such a profile could indicate the [[electron]] and [[electron hole|hole]] distributions where light is generated and could lead to improved laser designs. |
For example, the potential profile across the quantum well structure of a diode laser can be mapped and analyzed; such a profile could indicate the [[electron]] and [[electron hole|hole]] distributions where light is generated and could lead to improved laser designs. |
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Revision as of 04:06, 22 April 2021
 | This article needs to be updated. (April 2021) |
Scanning voltage microscopy (SVM), sometimes also called nanopotentiometry, is a scientific experimental technique based on atomic force microscopy. A conductive probe, usually only a few nanometers wide at the tip, is placed in full contact with an operational electronic or optoelectronic sample. By connecting the probe to a high-impedance voltmeter and rastering over the sample's surface, a map of the electric potential can be acquired. SVM is generally nondestructive to the sample although some damage may occur to the sample or the probe if the pressure required to maintain good electrical contact is too high. If the input impedance of the voltmeter is sufficiently large, the SVM probe should not perturb the operation of the operational sample.[1][2]
Applications
SVM is particularly well suited to analyzing microelectronic devices (such as transistors or diodes) or quantum electronic devices (such as quantum well diode lasers) directly because nanometer spatial resolution is possible.[1] SVM can also be used to verify theoretical simulation of complex electronic devices.[3]
For example, the potential profile across the quantum well structure of a diode laser can be mapped and analyzed; such a profile could indicate the electron and hole distributions where light is generated and could lead to improved laser designs.
Scanning gate microscopy
In a similar technique, scanning gate microscopy (SGM), the probe is oscillated at some natural frequency some fixed distance above the sample with an applied voltage relative to the sample. The image is constructed from the X,Y position of the probe and the conductance of the sample, with no significant current passing through the probe, which acts as a local gate. The image is interpreted as a map of the sample's sensitivity to gate voltage. A lock-in amplifier aids noise reduction by filtering through only the amplitude oscillations that match the probe's vibration frequency. Applications include imaging defect sites in carbon nanotubes and doping profiles in nanowires.
- ^ a b Kalinin, Sergei V.; Gruverman, Alexei (2007-04-03). Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale. Springer Science & Business Media. pp. 562–564. ISBN 978-0-387-28668-6.
- ^ Kuntze, Scott B.; Ban, Dayan; Sargent, Edward H.; Dixon-Warren, St. John; White, J. Kenton; Hinzer, Karin (2007), Kalinin, Sergei; Gruverman, Alexei (eds.), "Scanning Voltage Microscopy", Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale, New York, NY: Springer, pp. 561–600, doi:10.1007/978-0-387-28668-6_21, ISBN 978-0-387-28668-6, retrieved 2021-04-22
- ^ Kuntze, S. B.; Ban, D.; Sargent, E. H.; Dixon-Warren, St J.; White, J. K.; Hinzer, K. (2005-04-01). "Electrical Scanning Probe Microscopy: Investigating the Inner Workings of Electronic and Optoelectronic Devices". Critical Reviews in Solid State and Materials Sciences. 30 (2): 71–124. doi:10.1080/10408430590952523. ISSN 1040-8436.