I'd like more info on the structure of this device. Is terminal B grounded? Does this MOSFET have a body diode? The author says the gate is isolated, but the gate is isolated in a conventional MOSFET also. It looks like the substrate is isolated here.
I know some physics but not much circuit design. I am surprised that semiconductor fabrication can build micron sized elements that hold a charge on timescales spanning fabrication to deployment. Articles on semiconductor circuits, such as this, need general links to articles on the materials and physics behind these possibilities. Also numbers would also help understand the differences in timescales that a circuit element can hold a charge—milliseconds for DRAM, weeks for floating gate MOSFETs.
Perhaps this information in already at this site. I have not found it. Links would help. The article on insulators (Insulator_(electricity)) is good and shares the needed physics, but not the numbers to understand the duration of the charge on a FGMOSFET. A quick scan of the general article on semiconductors did not reveal this information.
What's here is good.