Epitaxy: Difference between revisions
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Commonly, this is accomplished by either single or batch wafer processing using [[Chemical vapor deposition]] in an [[epitaxial reactor]], which heats the wafers, etches the exposed face with [[Hydrochloric acid|hydrochloric]] gas, and then grows the epitaxial layers by flowing a gas mixture that contains silicon and a [[dopant]] over the wafer which is so hot that it glows. The gaseous molecules deposit on the face, if done properly, and extend the crystalline structure. |
Commonly, this is accomplished by either single or batch wafer processing using [[Chemical vapor deposition]] in an [[epitaxial reactor]], which heats the wafers, etches the exposed face with [[Hydrochloric acid|hydrochloric]] gas, and then grows the epitaxial layers by flowing a gas mixture that contains silicon and a [[dopant]] over the wafer which is so hot that it glows. The gaseous molecules deposit on the face, if done properly, and extend the crystalline structure. |
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Manufacturing issues include control of the amount and uniformity of the deposition's resistivity and thickness, the cleanliness and purity of the surface and the chamber atmosphere, the prevention of the typically much more highly doped substrate wafer's |
Manufacturing issues include control of the amount and uniformity of the deposition's resistivity and thickness, the cleanliness and purity of the surface and the chamber atmosphere, the prevention of the typically much more highly doped substrate wafer's diffusion of dopant to the new layers, imperfections of the growth process, and protecting the surfaces during the manufacture and handling. |
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==List of epitaxial methods== |
==List of epitaxial methods== |
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Revision as of 21:30, 22 December 2005
Epitaxy is the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material, such that the two materials have a defined, relative structural orientation.
Common use in industry is the growth of additional layers of doped silicon on the polished sides of prime silicon wafers, before they are processed into semiconductor devices. This is typical of the power devices, such as those used in pacemakers, vending machine controllers, automobile computers, etc.
Commonly, this is accomplished by either single or batch wafer processing using Chemical vapor deposition in an epitaxial reactor, which heats the wafers, etches the exposed face with hydrochloric gas, and then grows the epitaxial layers by flowing a gas mixture that contains silicon and a dopant over the wafer which is so hot that it glows. The gaseous molecules deposit on the face, if done properly, and extend the crystalline structure.
Manufacturing issues include control of the amount and uniformity of the deposition's resistivity and thickness, the cleanliness and purity of the surface and the chamber atmosphere, the prevention of the typically much more highly doped substrate wafer's diffusion of dopant to the new layers, imperfections of the growth process, and protecting the surfaces during the manufacture and handling.
List of epitaxial methods
- Atomic layer epitaxy (ALE)
- Chemical beam epitaxy (CBE)
- Metalorganic vapour phase epitaxy (MOVPE)
- Molecular beam epitaxy (MBE)