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The Zener effect is distinct from [[avalanche breakdown]] which involves minority carrier [[Electron|electrons]] in the transition region which are accelerated by the electric field to energies sufficient to free electron-hole pairs via collisions with bound electrons. Either the Zener or the avalanche effect may occur independently, or both may occur simultaneously. In general, diode junctions which break down below 5 V are caused by the Zener effect, while junctions which experience breakdown above 5 V are caused by the avalanche effect. Intermediate breakdown voltages (around 5V) are usually caused by a combination of the two effects.
The Zener effect is distinct from [[avalanche breakdown]] which involves minority carrier [[Electron|electrons]] in the transition region which are accelerated by the electric field to energies sufficient to free electron-hole pairs via collisions with bound electrons. Either the Zener or the avalanche effect may occur independently, or both may occur simultaneously. In general, diode junctions which break down below 5 V are caused by the Zener effect, while junctions which experience breakdown above 5 V are caused by the avalanche effect. Intermediate breakdown voltages (around 5V) are usually caused by a combination of the two effects.
This Zener breakdown voltage is found to occur at electric field intensity of about {{val|3|e=7|ul=V/m}}.<ref name=CT />
This Zener breakdown voltage is found to occur at electric field intensity of about {{val|3|e=7|ul=V/m}}.<ref name=CT />
Zener breakdown occurs in heavily doped junctions (p-type semiconductor moderately doped and n-type heavily doped), which produces a narrow depletion region. <ref name=Harvard> [http://people.seas.harvard.edu/~jones/es154/lectures/lecture_2/breakdown/breakdown.html] Zener and Avalanche Breakdown/Diodes, School of Engineering and Applied Sciences, Harvard University </ref> The avalanche breakdown occurs in lightly doped junctions, which produce a wider depletion layer. Temperature increase in the junction decreases Zener breakdown and increases the contribution of avalanche breakdown.
Zener breakdown occurs in heavily doped junctions (p-type semiconductor moderately doped and n-type heavily doped), which produces a narrow depletion region. <ref name=Harvard> [http://people.seas.harvard.edu/~jones/es154/lectures/lecture_2/breakdown/breakdown.html "Zener and Avalanche Breakdown/Diodes", School of Engineering and Applied Sciences, Harvard University </ref> The avalanche breakdown occurs in lightly doped junctions, which produce a wider depletion layer. Temperature increase in the junction decreases Zener breakdown and increases the contribution of avalanche breakdown.


==References==
==References==

Revision as of 21:54, 8 July 2013

The I-V curve for a diode showing avalanche and Zener breakdown. Note that the voltage increments in the negative range of the x-axis are larger than those in the positive range

The Zener effect is a type of electrical breakdown in a reverse biased p-n diode in which the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to a large number of free minority carriers, which suddenly increase the reverse current.[1] Zener breakdown is employed in a Zener diode.

Mechanism

Under a high reverse-bias voltage, the p-n junction's depletion region expands, leading to a high strength electric field across the junction. A sufficiently strong electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor leading to a large number of free charge carriers. This sudden generation of carriers rapidly increases the reverse current and gives rise to the high slope resistance of the Zener diode.

Relationship to the avalanche effect

The Zener effect is distinct from avalanche breakdown which involves minority carrier electrons in the transition region which are accelerated by the electric field to energies sufficient to free electron-hole pairs via collisions with bound electrons. Either the Zener or the avalanche effect may occur independently, or both may occur simultaneously. In general, diode junctions which break down below 5 V are caused by the Zener effect, while junctions which experience breakdown above 5 V are caused by the avalanche effect. Intermediate breakdown voltages (around 5V) are usually caused by a combination of the two effects. This Zener breakdown voltage is found to occur at electric field intensity of about 3×107 V/m.[1] Zener breakdown occurs in heavily doped junctions (p-type semiconductor moderately doped and n-type heavily doped), which produces a narrow depletion region. [2] The avalanche breakdown occurs in lightly doped junctions, which produce a wider depletion layer. Temperature increase in the junction decreases Zener breakdown and increases the contribution of avalanche breakdown.

References

  1. ^ a b "PN junction breakdown characteristics". Circuits Today. August 25 2009. Retrieved August 16 2011. {{cite web}}: Check date values in: |accessdate= and |date= (help)
  2. ^ [http://people.seas.harvard.edu/~jones/es154/lectures/lecture_2/breakdown/breakdown.html "Zener and Avalanche Breakdown/Diodes", School of Engineering and Applied Sciences, Harvard University