Plasma-enhanced chemical vapour deposition: Difference between revisions

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Plasma-enhanced chemical vapour deposition, PECVD or sometimes PCVD, is the process by which chemicals are deposited onto a substrate using a radio frequency (RF) plasma to split the precursors into active ions.

Theory

Precursor chemical enter the chamber (which is generally in high vacuum) at a specified rate, high frequency RF is switched on and a plasma is ignited. Sometimes there is substrate heating to promote reactions. Depending on the application, low frequency RF is used to improve film surface uniformity.

Input parameters

Pressure
Temperature
Radio frequency (high and low) power ratio
Gas flow ratio
Deposition time

Industry uses

Semiconductors
Optoelectronics
Anti-reflexion coatings
Scratch-free surfaces
Dielectric deposition oxi-nitride.
Metal deposition - tungsten

Ex:
Silicon dioxide, silicon nitride, silicon
Tin oxide, indium tin oxide
Copper oxide

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 ==Theory==
-Precursor chemical enter the chamber (which is generally in high vacuum) at a specified rate, high frequency RF is switched on and a plasma is ignited. Sometimes there is substrate heating to promote reactions.
+Precursor chemical enter the chamber (which is generally in high vacuum) at a specified rate, high frequency RF is switched on and a plasma is ignited. Sometimes there is substrate heating to promote reactions. Depending on the application, low frequency RF is used to improve film surface uniformity.
 ==Input parameters==