Wikipedia:WikiProject Chemicals/Chembox validation/VerifiedDataSandbox and Trimethylindium: Difference between pages
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Saving copy of the {{chembox}} taken from revid 451639091 of page Trimethylindium for the Chem/Drugbox validation project (updated: ''). |
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{{ambox | text = This page contains a copy of the infobox ({{tl|chembox}}) taken from revid [{{fullurl:Trimethylindium|oldid=451639091}} 451639091] of page [[Trimethylindium]] with values updated to verified values.}} |
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| verifiedrevid = |
| verifiedrevid = 470615539 |
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| ImageFile = Trimethylindium-2D.png |
| ImageFile = Trimethylindium-2D.png |
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| ImageFile_Ref = {{chemboximage|correct|??}} |
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| ImageSize1 = 244 |
| ImageSize1 = 244 |
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| ImageName1 = Ball and stick model of trimethylindium |
| ImageName1 = Ball and stick model of trimethylindium |
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| PIN = Trimethylindium |
| PIN = Trimethylindium |
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| SystematicName = Trimethylindigane<ref>{{Cite web|title = Trimethylindium - PubChem Public Chemical Database|url = |
| SystematicName = Trimethylindigane<ref>{{Cite web|title = Trimethylindium - PubChem Public Chemical Database|url = https://pubchem.ncbi.nlm.nih.gov/summary/summary.cgi?cid=76919&loc=ec_rcs|work = The PubChem Project|publisher = National Center for Biotechnology Information|at = Descriptors Computed from Structure|accessdate = 21 September 2011|location = USA|date = 27 March 2005}}</ref> |
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| OtherNames = Trimethylindane, indium trimethyl |
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|Section1={{Chembox Identifiers |
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| CASNo = 3385-78-2 |
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| CASNo_Ref = {{cascite|correct|CAS}} |
| CASNo = 3385-78-2 |
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| CASNo_Ref = {{cascite|correct|CAS}} |
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| UNII_Ref = {{fdacite|correct|FDA}} |
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| PubChem = 76919 |
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| UNII = WR722GMA7H |
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| PubChem_Ref = {{pubchemcite|correct|pubchem}} |
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| PubChem = 76919 |
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| ChemSpiderID = 69370 |
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| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}} |
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| EINECS = 222-200-9 |
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| EINECS = 222-200-9 |
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| InChI = 1/3CH3.In/h3*1H3;/rC3H9In/c1-4(2)3/h1-3H3 |
| SMILES = C[In](C)C |
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| InChI = 1/3CH3.In/h3*1H3;/rC3H9In/c1-4(2)3/h1-3H3 |
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| StdInChI = 1S/3CH3.In/h3*1H3; |
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| StdInChI_Ref = {{stdinchicite|correct|chemspider}} |
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| InChIKey = IBEFSUTVZWZJEL-SGQDGSKVAB |
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| StdInChIKey = IBEFSUTVZWZJEL-UHFFFAOYSA-N |
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| StdInChIKey_Ref = {{stdinchicite|correct|chemspider}} |
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|Section2={{Chembox Properties |
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| Formula = {{Chem|InC|3|H|9}} |
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| MolarMass = 159.922 g mol<sup>−1</sup> |
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| ExactMass = 159.974303616 g mol<sup>-1</sup> |
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| MeltingPtC = 88 |
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| BoilingPtC = 134 |
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| BoilingPtC = 134 |
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|Section3={{Chembox Thermochemistry |
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| DeltaHf = 150.5-169.7 kJ mol<sup>−1</sup> |
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|Section4={{Chembox Hazards |
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| MainHazards = Pyrophoric |
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| GHSPictograms = {{GHS02}}{{GHS05}} |
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| GHSSignalWord = Danger |
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| HPhrases = {{H-phrases|250|260|261|314}} |
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| PPhrases = {{P-phrases|210|222|223|231+232|260|264|280|301+330+331|302+334|303+361+353|304+340|305+351+338|310|321|335+334|363|370+378|402+404|405|422|501}} |
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'''Trimethylindium''', often abbreviated to '''TMI''' or '''TMIn''', is the organoindium compound with the formula In(CH<sub>3</sub>)<sub>3</sub>. It is a colorless, [[pyrophoric]] solid.<ref name=IS>{{cite book |doi=10.1002/9780470132623.ch8|chapter=Trimethylindium and Trimethylgallium|year=1997|last1=Bradley|first1=D. C.|last2=Chudzynska|first2=H. C.|last3=Harding|first3=I. S.|title=Inorganic Syntheses |pages=67–74|volume=31|isbn=978-0-471-15288-0 }}</ref> Unlike [[trimethylaluminium]], but akin to [[trimethylgallium]], TMI is monomeric.<ref>{{Greenwood&Earnshaw2nd|p=262}}</ref> |
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==Preparation== |
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TMI is prepared by the reaction of [[indium trichloride]] with [[methyl lithium]].<ref name=IS/><ref>''Main Group compounds'' in Inorganic Syntheses, vol 31, Schultz, Neumayer, Marks; Ed., Alan H. Cowley, John Wiley & Sons, Inc., 1997, {{ISBN|0471152889}}</ref> |
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: InCl<sub>3</sub> + 3{{nbsp}}LiMe → Me<sub>3</sub>In<sup>.</sup>OEt<sub>2</sub> + 3{{nbsp}}LiCl |
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== Properties == |
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Compared to [[trimethylaluminium]] and [[trimethylgallium]], InMe<sub>3</sub> is a weaker [[Lewis acid]]. It forms adducts with secondary [[amine]]s and [[phosphine]]s.<ref name="Jones&OBrien" /> A complex with the heterocyclic [[Hexahydro-1,3,5-triazine|triazine]] ligand (Pr<sup>i</sup>NCH<sub>2</sub>)<sub>3</sub> forms a complex with 6-coordinate In, where the C-In-C angles are 114°-117° with three long bonds to the tridentate ligand with N-In-N angles of 48.6° and long In-N bonds of 278 pm.<ref name="Greenwod&Earnshaw">{{Greenwood&Earnshaw|page=263}}</ref> |
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==Structure== |
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In the gaseous state InMe<sub>3</sub> is monomeric, with a trigonal planar structure, and in [[benzene]] solution it is tetrameric.<ref name = "Jones&OBrien">''CVD of compound semiconductors, Precursor Synthesis, Development and Applications'', Anthony C. Jones, Paul O'Brien, John Wiley & Sons, 2008, {{ISBN|3527292942}}</ref> |
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In the solid state there are two polymorphs, a tetragonal phase which is obtained, for example, by sublimation and a lower density rhombohedral phase discovered in 2005,<ref name="LewińskiZachara2005">{{cite journal|last1=Lewiński|first1=Janusz|last2=Zachara|first2=Janusz|last3=Starowieyski|first3=Kazimierz B.|last4=Justyniak|first4=Iwona|last5=Lipkowski|first5=Janusz|last6=Bury|first6=Wojciech|last7=Kruk|first7=Przemysław|last8=Woźniak|first8=Robert|title=A Second Polymorphic Form of Trimethylindium: Topology of Supramolecular Architectures of Group 13 Trimethyls|journal=Organometallics|volume=24|issue=20|year=2005|pages=4832–4837|issn=0276-7333|doi=10.1021/om050386s}}</ref> when InMe<sub>3</sub> re-crystallised from [[hexane]] solution. |
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In the tetragonal form InMe<sub>3</sub> is tetrameric as in benzene solution and there is bridging between tetramers to give an infinite network. Each indium atom is five coordinate, in a distorted [[Trigonal planar molecular geometry|trigonal planar]] configuration, the three shortest bonds,(ca. 216 pm ) are those in the equatorial plane, with longer axial bonds, 308 pm for the In-C bonds joining the InMe<sub>3</sub> units to form the tetramers and 356 pm for the In-C linking the tetramers into an infinite network.<ref name = "Houseman&Sharpe">''Inorganic Chemistry'', (2d edition), Catherine E. Housecroft, Alan G. Sharpe, Pearson Education, 2005, {{ISBN|0130399132}} , {{ISBN|978-0130399137}}</ref> The solid state structures of [[trimethylgallium|GaMe<sub>3</sub>]] and [[trimethylthallium|TlMe<sub>3</sub>]] are similar.<ref name = "Houseman&Sharpe"/> The association in the solid state accounts for the high melting point of 89°-89.8 °C compared to [[triethylindium]] which melts at -32 °C.<ref name = "Jones&OBrien"/> |
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The rhombohedral form of InMe<sub>3</sub> consists of cyclic hexamers with 12 membered (InC)<sub>6</sub> rings in an extended [[chair conformation]]. The hexamers are interlinked into an infinite network. Indium atoms are five coordinate the equatorial In-C distances average 216.7pm almost identical to the average for the tetragonal form, and the axial bonds are 302.8pm joining the InMe<sub>3</sub> units into hexamers and 313.4 pm linking the hexamers to form the infinite network.<ref name="LewińskiZachara2005"/> |
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==Application to microelectronics== |
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Indium is a component of several [[compound semiconductor]]s, including as InP, InAs, [[InN]], [[InSb]], [[GaInAs]], [[InGaN]], [[Aluminium gallium indium phosphide|AlGaInP]], AlInP, and AlInGaNP. These materials are prepared by [[metalorganic vapour phase epitaxy]] ([[MOVPE]]) and TMI is the preferred source for the [[indium]] component. High purity in TMI (99.9999% pure or greater) is essential for many of these applications. For some materials, electron mobilities are observed as high as 287,000 cm²/Vs at 77 K and 5400 cm²/Vs at 300 K, and background carrier concentration as low as 6×10<sup>13</sup> cm<sup>−3</sup>.<ref>{{cite journal | doi = 10.1016/S0022-0248(02)01854-7 | title = Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds | year = 2003 | last1 = Shenai | first1 = Deo V. | last2 = Timmons | first2 = Michael L. | last3 = Dicarlo | first3 = Ronald L. | last4 = Lemnah | first4 = Gregory K. | last5 = Stennick | first5 = Robert S. | journal = Journal of Crystal Growth | volume = 248 | pages = 91–98| bibcode = 2003JCrGr.248...91S }}</ref><ref>{{cite journal | doi = 10.1016/j.jcrysgro.2004.09.006 | title = Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine | year = 2004 | last1 = Shenai | first1 = Deodatta V. | last2 = Timmons | first2 = Michael L. | last3 = Dicarlo | first3 = Ronald L. | last4 = Marsman | first4 = Charles J. | journal = Journal of Crystal Growth | volume = 272 | issue = 1–4 | pages = 603–608| bibcode = 2004JCrGr.272..603S }}</ref> |
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===Vapor pressure equation=== |
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The [[vapor pressure]] equation log P (Torr) = 10.98–3204/T (K) describes TMI within a wide range of [[MOVPE]] growth conditions.<ref>{{cite journal | doi = 10.1016/j.jcrysgro.2007.11.196 | title = Accurate vapor pressure equation for trimethylindium in OMVPE | year = 2008 | last1 = Shenai-Khatkhate | first1 = Deodatta V. | last2 = Dicarlo | first2 = Ronald L. | last3 = Ware | first3 = Robert A. | journal = Journal of Crystal Growth | volume = 310 | issue = 7–9 | pages = 2395| bibcode = 2008JCrGr.310.2395S }}</ref> |
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==Safety== |
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TMI is [[pyrophoric]].<ref>Chemistry of Materials (2000); {{doi|10.1021/cm990497f}}</ref> |
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==References== |
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{{Reflist}} |
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==External links== |
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* [http://osulibrary.oregonstate.edu/specialcollections/rnb/19/19-049-large.html Interesting research notes] by [[Linus Pauling]] in re: Trimethylindium and its structure; ''Notebook # 19, Page 049'', August 1955. |
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* [https://web.archive.org/web/20061018095008/http://electronicmaterials.rohmhaas.com/businesses/micro/metalorganics/vapor.asp?caid=291 Interactive Vapor Pressure Chart for metalorganics]. |
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{{Indium compounds}} |
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[[Category:Chemical vapour deposition precursors]] |
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[[Category:Indium compounds]] |
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[[Category:Methyl complexes]] |
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[[Category:Pyrophoric materials]] |