Tunnel magnetoresistance

In physics, the tunnel magnetoresistance effect, commonly abbreviated as TMR, occurs when two ferromagnets are separated by a thin (about 1 nm) insulator. Then the resistance of the tunneling current changes with the relative orientation of the two magnetic layers. The resistance is normally higher in the anti-parallel case.

It was discovered in 1975 by M. Julliere, using iron as the ferromagnet and germanium as the insulator.

Room temperature TMR was discovered in 1995 by Moodera et. al. following renewed interest in this field fueled by the discovery of the giant magnetoresistive effect. It is now the base for the magnetic random access memory (MRAM) and read sensors in hard disk drives. For more technical information see [Moodera and Mathon 1999].

References

• M. Julliere (1975). "Tunneling between ferromagnetic films". Phys. Lett. 54A: 225–226. sciencedirect

• J. S. Moodera; et al. (1995). "Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions". Phys. Rev. Lett. 74: 3273–3276. {{cite journal}}: Explicit use of et al. in: |author= (help) aps

• G. Binasch; et al. (1989). "Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange". Phys. Rev. B. 39: 4828–4830. {{cite journal}}: Explicit use of et al. in: |author= (help) aps

• M. N. Baibich; et al. (1988). "Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices". Phys. Rev. Lett. 61: 2472–2475. {{cite journal}}: Explicit use of et al. in: |author= (help) aps

• J. S. Moodera and George Mathon (1999). "Spin polarized tunneling in ferromagnetic junctions". Magn. Magn. Mater. 200: 248–273. sciencedirect