Two-photon photovoltaic effect
Two-photon photovoltaic effect is an energy harvesting technique based on two-photon absorption. The effect occurs when two photons are absorbed simultaneously in a semiconductor material and give rise to an electron-hole pair. The photon-generated electron and hole are then collected for electrical power generation using a p-n junction diode. The two-photon photovoltaic effect can be considered as the nonlinear equivalent of the conventional photovoltaic effect commonly used in p-n junction solar cells. The effect was first discovered in silicon [1] and later observed in gallium arsenide [2] and has potential in achieving energy-efficient electronic-photonic integrated circuits.[3]
References
- ^ [1], S. Fathpour, K. Tsia and B. Jalali, "Two-Photon Photovoltaic Effect in Silicon," IEEE Journal of Quantum Electronics, vol. 43, p. 1211, 2007.
- ^ [2], J. Ma, J. Chiles, Y. D. Sharma, S. Krishna, and S. Fathpour, "Two-Photon Photovoltaic Effect in Gallium Arsenide," Optics Letters, vol. 39, p. 5297, 2014.
- ^ [3], B. Jalali and S. Fathpour, "Silicon Photonics," IEEE Journal of Lightwave Technology, vol. 24, p. 460, 2006.