Simon Sze

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Dr. Simon Min Sze (Chinese: 施敏; pinyin: Shī Mĭn) is an electrical engineer researcher. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford in 1963. He worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of NCTU. He is well known for his work in semiconductor physics and technology, including his discovery with Dawon Kahng of the floating-gate transistor,[1] now widely used in non-volatile semiconductor memory devices. He has written and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field. Sze received the J J Ebers Award in 1991 for his work in electron devices.[2]

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  1. ^ D. Kahng and S. M. Sze, A floating-gate and its application to memory devices, The Bell System Technical Journal, 46, #4 (1967), pp. 1288–1295.
  2. ^ Electron Devices Society J.J. Ebers Award, web page at the IEEE, accessed 11-I-2007.