Charge carrier: Difference between revisions
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=== Majority and minority carriers === |
=== Majority and minority carriers === |
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The more abundant charge carriers are called '''majority carriers'''. In [[n-type semiconductor]]s they are electrons, while in [[p-type semiconductor]]s they are holes. The less abundant charge carriers are called '''minority carriers'''; in n-type semiconductors they are holes, while in p-type semiconductors they are electrons. |
The more abundant charge carriers are called '''majority carriers''', which are primarily responsible for [[current (electricity)|current]] transport in a piece of semiconductor. In [[n-type semiconductor]]s they are electrons, while in [[p-type semiconductor]]s they are holes. The less abundant charge carriers are called '''minority carriers'''; in n-type semiconductors they are holes, while in p-type semiconductors they are electrons. |
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In an [[intrinsic semiconductor]] the concentrations of both types of carriers are ideally equal. |
In an [[intrinsic semiconductor]], which does not contain any impurity, the concentrations of both types of carriers are ideally equal. If an intrinsic semiconductor is doped with n-type impurity then the majority carriers are electrons; if the semiconductor is doped with p-type impurity then the majority carriers are holes. |
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Minority carriers play an important role in [[Bipolar junction transistor|bipolar transistors]] and [[solar cells]]. Their role in [[field-effect transistor]]s (FETs) is a bit more complex: for example, a [[MOSFET]] has both p-type and n-type regions. The transistor action involves the majority carriers of the [[source (transistor)|source]] and [[drain (transistor)|drain]] regions, but these carriers traverse the [[body (transistor)|body]] of the opposite type, where they are minority carriers. However, the traversing carriers hugely outnumber their opposite type in the transfer region (in fact, the opposite type carriers are removed by an applied electric field that creates an [[Inversion layer (semiconductors)|inversion layer]]), so conventionally the source and drain designation for the carriers is adopted, and FETs are called "majority carrier" devices. |
Minority carriers play an important role in [[Bipolar junction transistor|bipolar transistors]] and [[solar cells]]. Their role in [[field-effect transistor]]s (FETs) is a bit more complex: for example, a [[MOSFET]] has both p-type and n-type regions. The transistor action involves the majority carriers of the [[source (transistor)|source]] and [[drain (transistor)|drain]] regions, but these carriers traverse the [[body (transistor)|body]] of the opposite type, where they are minority carriers. However, the traversing carriers hugely outnumber their opposite type in the transfer region (in fact, the opposite type carriers are removed by an applied electric field that creates an [[Inversion layer (semiconductors)|inversion layer]]), so conventionally the source and drain designation for the carriers is adopted, and FETs are called "majority carrier" devices. |
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Revision as of 17:30, 17 December 2011
 | This article needs additional citations for verification. (January 2009) |
In physics, a charge carrier is a free (mobile, unbound) particle carrying an electric charge, especially the particles that carry electric currents in electrical conductors. Examples are electrons, ions and holes. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In different conducting media, different particles serve to carry charge:
In metals, the charge carriers are electrons. One or two of the outer valence electrons from each atom is able to move about freely within the crystal lattice of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas.
In ionic solutions, such as salt water, the charge carriers are the dissolved cations and anions. Similarly, cations and anions of the dissociated liquid serve as charge carriers in liquids and melted ionic solids (see eg. the Hall-Heroult process for an example of electrolysis of a melt).
In plasma, such as an electric arc, the electrons and cations of ionized gas and vaporized material of electrodes act as charge carriers. (The electrode vaporization occurs in vacuum too, but then the arc is not technically occurring in vacuum, but in low-pressure electrode vapors.)
In vacuum, in an electric arc or in vacuum tubes free electrons act as charge carriers.
In semiconductor physics, the charge carriers are electrons (negative electric charge) and electron holes (positive electric charge).
Charge carriers in semiconductors
There are two recognized types of charge carriers in semiconductors. One of them is electrons, which carry negative electric charge. In addition, it is convenient to treat the traveling vacancies in the valence-band electron population (holes) as the second type of charge carriers, which carry a positive charge equal in magnitude to that of an electron.
Carrier generation and recombination
When an electron meets with a hole, they recombine and these free carriers effectively vanish. The energy released can be either thermal, heating up the semiconductor (thermal recombination, one of the sources of waste heat in semiconductors), or released as photons (optical recombination, used in LEDs and semiconductor lasers).
Majority and minority carriers
The more abundant charge carriers are called majority carriers, which are primarily responsible for current transport in a piece of semiconductor. In n-type semiconductors they are electrons, while in p-type semiconductors they are holes. The less abundant charge carriers are called minority carriers; in n-type semiconductors they are holes, while in p-type semiconductors they are electrons.
In an intrinsic semiconductor, which does not contain any impurity, the concentrations of both types of carriers are ideally equal. If an intrinsic semiconductor is doped with n-type impurity then the majority carriers are electrons; if the semiconductor is doped with p-type impurity then the majority carriers are holes.
Minority carriers play an important role in bipolar transistors and solar cells. Their role in field-effect transistors (FETs) is a bit more complex: for example, a MOSFET has both p-type and n-type regions. The transistor action involves the majority carriers of the source and drain regions, but these carriers traverse the body of the opposite type, where they are minority carriers. However, the traversing carriers hugely outnumber their opposite type in the transfer region (in fact, the opposite type carriers are removed by an applied electric field that creates an inversion layer), so conventionally the source and drain designation for the carriers is adopted, and FETs are called "majority carrier" devices.
Free carrier concentration
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons (or holes) which have been introduced directly into the conduction band (or valence band) by doping and are not promoted thermally. For this reason electrons (holes) will not act as double carriers by leaving behind holes (electrons) in the other band.