Quantum-cascade laser: Difference between revisions
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'''Quantum cascade lasers''' (QCLs) are |
'''Quantum cascade lasers''' (QCLs) are semiconductor lasers that emit in the near- to far-[[infrared]] portion of the [[electromagnetic spectrum]] and were first demonstrated by Jerome Faist, [[Federico Capasso]], Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and [[Alfred Cho]] at [[Bell Laboratories]] in [[1994]].<ref>{{cite journal |quotes= |last= Faist|first= Jerome|authorlink= |coauthors= Federico Capasso, Deborah L. Sivco, Carlo Sirtori, Albert L. Hutchinson, and Alfred Y. Cho|year= 1994|month= April|title= Quantum Cascade Laser|journal=Science|volume=264|issue=5158|pages=553-556|doi=10.1126/science.264.5158.553|url=http://www.sciencemag.org/cgi/content/abstract/264/5158/553|accessdate=2007-02-18}}</ref> |
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Unlike typical interband semiconductor lasers that emit [[electromagnetic radiation]] through the recombination of [[electron–hole pair]]s across the material [[band gap]], QCLs are unipolar and laser emission is achieved through the use of intersubband transitions in a repeated stack of semiconductor [[superlattice]]s, an idea first proposed in the paper "Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice" by R.F. Kazarinov and R.A. Suris in 1971.<ref>{{cite journal|quotes= |last= Kazarinov|first= R.F|authorlink= |coauthors= Suris, R.A.|year= 1971|month= April|title= Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice|journal= Fizika i Tekhnika Poluprovodnikov|volume=5|issue=4|pages=797-800|id= |url= |accessdate=}}</ref> |
Unlike typical interband [[semiconductor lasers]] that emit [[electromagnetic radiation]] through the recombination of [[electron–hole pair]]s across the material [[band gap]], QCLs are unipolar and laser emission is achieved through the use of intersubband transitions in a repeated stack of semiconductor [[superlattice]]s, an idea first proposed in the paper "Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice" by R.F. Kazarinov and R.A. Suris in 1971.<ref>{{cite journal|quotes= |last= Kazarinov|first= R.F|authorlink= |coauthors= Suris, R.A.|year= 1971|month= April|title= Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice|journal= Fizika i Tekhnika Poluprovodnikov|volume=5|issue=4|pages=797-800|id= |url= |accessdate=}}</ref> |
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⚫ | Within a bulk semiconductor crystal, electrons may occupy states in one of two continuous energy bands - the [[valence band]], which is heavily populated with low energy electrons and the [[conduction band]], which is sparsely populated with high energy electrons. The two energy bands are separated by an energy band gap in which there are no permitted states available for electrons to occupy. Conventional semiconductor laser diodes generate light by a single [[photon]] of being emitted when a high energy electron in conduction band recombines with a [[electron hole|hole]] in the valence band. The energy of the photon and hence the emission wavelength of laser diodes is therefore determined by the band gap of the material system used. |
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A QCL however does not use bulk semiconductor materials in its optically active region. Instead it comprises of a [[periodic function|periodic]] series of thin layers of varying material composition forming a superlattice. The superlattice introduces a varying [[electric potential]] across the length of the device, meaning that there is a varying [[probability]] of electrons occupying different positions over the length of the device. This is referred to as [[one-dimensional]] [[multiple quantum well]] [[quantum confinement|confinement]] and leads to the splitting of the band of permitted energies into a number of discrete electronic subbands. By suitable design of the layer thicknesses it is possible to engineer a [[population inversion]] between two subbands in the system which is required in order to achieve laser emission. Since the position of the energy levels in the system is primarily determined by the layer thicknesses and not the material, it is possible to tune the emission wavelength of QCLs over a wide range in the same material system. |
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⚫ | Additionally, in semiconductor laser diodes, electrons and holes are annihilated after recombining across the band gap and can play no further part in photon generation. However in a unipolar QCL, once an [[electron]] has undergone an intersubband transition and emitted a [[photon]] in one period of the superlattice, it can [[quantum tunnelling|tunnel]] into the next period of the structure where another photon can be emitted. This process of a single electron causing the emission of multiple photons as it traverses through the QCL structure gives rise to the name ''cascade'' and makes a [[quantum efficiency]] of greater than unity possible which leads to higher output powers than semiconductor laser diodes. |
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⚫ | The independence of laser operation from the conduction and valence band edge characteristics makes laser operation from indirect bandgap materials such as the [[Silicon|Si]]/[[SiGe]] is theoretically possible.<ref>{{cite journal |quotes= |last=Paul|first=Douglas J|authorlink= |coauthors= |year= 2004|month= |title= |journal=Semicond. Sci. Technol. |volume=19 |issue= |pages= R75-R108|doi=10.1088/0268-1242/19/10/R02|url=http://www.iop.org/EJ/abstract/0268-1242/19/10/R02|accessdate=2007-02-18}}</ref> |
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QCLs are typically based upon a [[population inversion#Three-level lasers|three-level system]]. |
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==Rate equations== |
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Assuming the formation of the wavefunctions is a fast process compared to scattering between states, the time independent solutions to the Schrodinger equation may be applied and the system can be modelled using rate equations. Each subband contains a number of electrons <math>n_i</math> (where <math>i</math> is the subband index) which [[Scattering|scatter]] between levels with a lifetime <math>\tau_{if}</math>, where <math>i</math> and <math>f</math> are the initial and final subband indices. The rate equations of the three laser levels are given by |
Assuming the formation of the wavefunctions is a fast process compared to scattering between states, the time independent solutions to the Schrodinger equation may be applied and the system can be modelled using rate equations. Each subband contains a number of electrons <math>n_i</math> (where <math>i</math> is the subband index) which [[Scattering|scatter]] between levels with a lifetime <math>\tau_{if}</math>, where <math>i</math> and <math>f</math> are the initial and final subband indices. The rate equations of the three laser levels are given by |
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The figure shows the wavefunctions in a three quantum well (3QW) QCL active region and injector. The ground states of the three quantum wells in the active region form the three laser levels. |
The figure shows the wavefunctions in a three quantum well (3QW) QCL active region and injector. The ground states of the three quantum wells in the active region form the three laser levels. |
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==Advantages over interband laser diodes== |
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== Growth and fabrication== |
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⚫ | The laser's high optical power output, tuning range and room temperature operation make it useful for spectroscopic applications like the remote sensing of environmental [[gas]]es and [[pollutant]]s in the atmosphere. It may eventually be used for vehicular [[cruise control]] in conditions of poor [[visibility]], collision avoidance [[radar]], industrial process control, and medical [[diagnosis|diagnostics]] such as [[breath analyzer]]s. |
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⚫ | The QCL consists of alternating layers of two different [[semiconductors]] (for example [[GaAs]]/[[AlGaAs]] or [[AlInAs]]/[[InGaAs]]) forming a [[quantum heterostructure]]. The layers are grown on a substrate using a process called [[molecular beam epitaxy]] (MBE), or [[metalorganic vapour phase epitaxy]] (MOVPE). The wavelengths that are available from quantum cascade lasers are therefore diverse, giving emission in the range of ] covering the mid-[[infrared]] range. |
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==Fabrication== |
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⚫ | The QCL consists of alternating layers of two different [[semiconductors]] (for example [[GaAs]]/[[AlGaAs]] or [[AlInAs]]/[[InGaAs]]) forming a [[quantum heterostructure]]. The layers are grown on a substrate using a process called [[molecular beam epitaxy]] (MBE), or [[metalorganic vapour phase epitaxy]] (MOVPE). |
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In 1996, [[Claire Gmachl]], a post-doctoral researcher at [[Bell Laboratories]] significantly reduced the linewidth of the QCL by incorporating a [[waveguide (optics)|waveguide]] into the design, thus amplifying one particular wavelength. |
In 1996, [[Claire Gmachl]], a post-doctoral researcher at [[Bell Laboratories]] significantly reduced the linewidth of the QCL by incorporating a [[waveguide (optics)|waveguide]] into the design, thus amplifying one particular wavelength. |
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Often a structure called a [[Distributed Feedback Laser|distributed feedback]] (DFB) is built on top of the laser crystal to prevent it from emitting at other than the desired wavelength. |
Often a structure called a [[Distributed Feedback Laser|distributed feedback]] (DFB) is built on top of the laser crystal to prevent it from emitting at other than the desired wavelength. |
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⚫ | Within a bulk semiconductor crystal, electrons may occupy states in one of two continuous energy bands - the [[valence band]], which is heavily populated with low energy electrons and the [[conduction band]], which is sparsely populated with high energy electrons. The two energy bands are separated by an energy |
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Conventional semiconductor lasers rely on a single photon of light being emitted when a high energy electron from the conduction band "falls" into an unoccupied [[electron hole|hole]] in the valence band. The wavelength of light emitted is therefore strongly dependent upon the energy bandgap of the laser material. |
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⚫ | The laser's high optical power output, tuning range and room temperature operation make it useful for spectroscopic applications like the remote sensing of environmental [[gas]]es and [[pollutant]]s in the atmosphere. It may eventually be used for vehicular [[cruise control]] in conditions of poor [[visibility]], collision avoidance [[radar]], industrial process control, and medical [[diagnosis|diagnostics]] such as [[breath analyzer]]s. |
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The quantum cascade laser however does not use bulk semiconductor materials in its optically active region. Instead, it consists of a [[periodic function|periodic]] series of thin layers of varying material composition. The varying composition introduces a varying [[electric potential]] across the length of the device, meaning that there is a varying [[probability]] of electrons occupying different positions over the length of the device. This is referred to as [[one-dimensional]] [[multiple quantum well]] [[quantum confinement|confinement]] and leads to the splitting of the band of permitted energies into a number of electric subbands. For any given energy, an electron may occupy a number of different subbands, each with a different [[momentum]]. |
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By careful selection of material composition and thickness of each layer in the device, and the applied external [[electric field]], an electric subband minimum in a given period of the device may be aligned with a higher energy subband minimum in the adjacent period. Therefore, an electron may take part in an optical transition between electric subbands in a given period before [[quantum tunneling|tunneling]] into the next period of the structure and performing another optical transition. This process may occur dozens of times for each electron moving through the device, giving high optical power output. |
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==References== |
==References== |
Revision as of 15:05, 24 April 2007
Quantum cascade lasers (QCLs) are semiconductor lasers that emit in the near- to far-infrared portion of the electromagnetic spectrum and were first demonstrated by Jerome Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994.[1]
Unlike typical interband semiconductor lasers that emit electromagnetic radiation through the recombination of electron–hole pairs across the material band gap, QCLs are unipolar and laser emission is achieved through the use of intersubband transitions in a repeated stack of semiconductor superlattices, an idea first proposed in the paper "Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice" by R.F. Kazarinov and R.A. Suris in 1971.[2]
Intersubband vs. interband transitions
Within a bulk semiconductor crystal, electrons may occupy states in one of two continuous energy bands - the valence band, which is heavily populated with low energy electrons and the conduction band, which is sparsely populated with high energy electrons. The two energy bands are separated by an energy band gap in which there are no permitted states available for electrons to occupy. Conventional semiconductor laser diodes generate light by a single photon of being emitted when a high energy electron in conduction band recombines with a hole in the valence band. The energy of the photon and hence the emission wavelength of laser diodes is therefore determined by the band gap of the material system used.
A QCL however does not use bulk semiconductor materials in its optically active region. Instead it comprises of a periodic series of thin layers of varying material composition forming a superlattice. The superlattice introduces a varying electric potential across the length of the device, meaning that there is a varying probability of electrons occupying different positions over the length of the device. This is referred to as one-dimensional multiple quantum well confinement and leads to the splitting of the band of permitted energies into a number of discrete electronic subbands. By suitable design of the layer thicknesses it is possible to engineer a population inversion between two subbands in the system which is required in order to achieve laser emission. Since the position of the energy levels in the system is primarily determined by the layer thicknesses and not the material, it is possible to tune the emission wavelength of QCLs over a wide range in the same material system.
Additionally, in semiconductor laser diodes, electrons and holes are annihilated after recombining across the band gap and can play no further part in photon generation. However in a unipolar QCL, once an electron has undergone an intersubband transition and emitted a photon in one period of the superlattice, it can tunnel into the next period of the structure where another photon can be emitted. This process of a single electron causing the emission of multiple photons as it traverses through the QCL structure gives rise to the name cascade and makes a quantum efficiency of greater than unity possible which leads to higher output powers than semiconductor laser diodes.
The independence of laser operation from the conduction and valence band edge characteristics makes laser operation from indirect bandgap materials such as the Si/SiGe is theoretically possible.[3]
Operating principles
QCLs are typically based upon a three-level system.
![](http://upload.wikimedia.org/wikipedia/commons/thumb/f/fb/3level-qcl.png/400px-3level-qcl.png)
Rate equations
Assuming the formation of the wavefunctions is a fast process compared to scattering between states, the time independent solutions to the Schrodinger equation may be applied and the system can be modelled using rate equations. Each subband contains a number of electrons (where is the subband index) which scatter between levels with a lifetime , where and are the initial and final subband indices. The rate equations of the three laser levels are given by
In the steady state, the time derivatives are equal to zero and . Under the assumption that absorption processes can be ignored (which is valid at low temperatures), the middle rate equation gives
Therefore if then and a population inversion will exist. The scattering rates are tailored by suitable design of the layer thicknesses in the superlattice which determine the electron wave functions of the subbands. The scattering rates are heavily dependent upon the overlap and energy spacing between the wavefunctions.
![](http://upload.wikimedia.org/wikipedia/commons/thumb/5/53/3qw-qcl.png/400px-3qw-qcl.png)
The figure shows the wavefunctions in a three quantum well (3QW) QCL active region and injector. The ground states of the three quantum wells in the active region form the three laser levels.
Growth and fabrication
The QCL consists of alternating layers of two different semiconductors (for example GaAs/AlGaAs or AlInAs/InGaAs) forming a quantum heterostructure. The layers are grown on a substrate using a process called molecular beam epitaxy (MBE), or metalorganic vapour phase epitaxy (MOVPE). The wavelengths that are available from quantum cascade lasers are therefore diverse, giving emission in the range of ] covering the mid-infrared range.
In 1996, Claire Gmachl, a post-doctoral researcher at Bell Laboratories significantly reduced the linewidth of the QCL by incorporating a waveguide into the design, thus amplifying one particular wavelength. Often a structure called a distributed feedback (DFB) is built on top of the laser crystal to prevent it from emitting at other than the desired wavelength.
Applications
The laser's high optical power output, tuning range and room temperature operation make it useful for spectroscopic applications like the remote sensing of environmental gases and pollutants in the atmosphere. It may eventually be used for vehicular cruise control in conditions of poor visibility, collision avoidance radar, industrial process control, and medical diagnostics such as breath analyzers.
References
- ^ Faist, Jerome (1994). "Quantum Cascade Laser". Science. 264 (5158): 553–556. doi:10.1126/science.264.5158.553. Retrieved 2007-02-18.
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