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Alexander A. Balandin

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Alexander A. Balandin
NationalityUnited States and Russia
Alma materUniversity of Notre Dame, Moscow Institute of Physics and Technology
Known forThermal Transport in Graphene; Phonon and Exciton Confinement Effects in Nanostructures, 1/f Noise
AwardsIEEE Pioneer Award in Nanotechnology, National Science Foundation CAREER Award, Office of Naval Research Young Investigator Award, Merrill Lynch Innovation Award, Fellow of APS, SPIE, OSA, IOP and AAAS
Scientific career
FieldsNanotechnology, Graphene Devices, Phonon Engineering, Thermal Transport
InstitutionsUniversity of California, Riverside, University of California, Los Angeles
Websitebalandingroup.ucr.edu

Alexander A. Balandin is an electrical engineer and materials scientist known for his studies of phonons and excitons in nanostructures, experimental and theoretical investigation of thermal properties of graphene, electronic 1/f noise in novel materials and devices as well as for his works on practical applications of semiconductor nanostructures and graphene in electronics, optoelectronics and energy conversion.

Academic career

Alexander A. Balandin received his BS in 1989 and MS in 1991 degrees summa cum laude in Applied Physics and Mathematics from the Moscow Institute of Physics & Technology (MIPT), Russia. He received his second MS in 1995 and PhD in 1996 degrees in Electrical Engineering from the University of Notre Dame, USA. From 1997 to 1999, he worked as Research Engineer in the Device Research Laboratory at the University of California, Los Angeles (UCLA). In 1999 he joined the Department of Electrical Engineering, University of California, Riverside (UCR), where he is Professor of Electrical Engineering and Founding Chair of Materials Science and Engineering (MS&E). He is Director of the Nano-Device Laboratory (NDL), which he organized in 2000. In 2005, he was a Visiting Professor at the University of Cambridge, U.K. As the Founding Chair of the interdisciplinary MS&E program, he led the UCR efforts for introducing BS, MS and PhD degrees in MS&E.[1]

Research

Professor Balandin’s research interests are in the area of advanced materials, nanostructures and nanodevices for electronics, optoelectronics and renewable energy conversion. He conducts both experimental and theoretical research[2]. Balandin and coworkers were among the pioneers of the field of phonon engineering.[3] In 1998, he published an influential paper on the effects of phonon spatial confinement on thermal conductivity of nanostructures[4] (where the term “phonon engineering” likely appeared for the first time in a journal publication). Phonon engineering finds application in thermoelectric energy conversion and thermal management of advanced electronics. He has contributed to development of GaN technology by investigating heat conduction in GaN films[5] and studying 1/f noise in GaN devices.[6] He advanced ZnO technology by studying excitonic effects, confined phonon and optical properties of wurtzite nanostructures.[7] In 2008, Balandin’s group authored a highly cited paper on the first measurement of thermal conductivity of suspended graphene.[8] In order to perform the first measurement of thermal properties of graphene, Balandin invented a new optothermal experiment technique based on Raman spectroscopy. He and his coworkers explained theoretically why the intrinsic thermal conductivity of graphene can be higher than that of bulk graphite,[9][10] and demonstrated experimentally the evolution of heat conduction when the system dimensionality changes from 2D (graphene) to 3D (graphite).[11] Balandin’s group advanced the graphene field by demonstrating the low-noise top-gate graphene transistor[12] and graphene triple-mode amplifier and phase detector. The layman description of the unusual thermal properties of graphene can be found in IEEE Spectrum feature article.[13] Balandin's group has also reported the first "graphene-like" mechanical exfoliation of atomically thin films of topological insulators[14][15] and other materials.[16] Balandin group’s research achievements were highlighted in Nature, Nature Nanotechnology, IEEE Spectrum, MIT Technology Review, Materials Today, Physics World, nationally syndicated radio programs and other media worldwide.

Honors and awards

Balandin received the following honors and awards:

In 2018 Balandin had received two grants from DARPA and the Semiconductor Research Corporation.[28]

Nano-Device Laboratory - Balandin Group

Dr. Balandin's Group logo

NDL research group conducts theoretical and experimental research on nanostructures and novel materials and their applications in electronics, optoelectronics and renewable energy conversion[29].

References

  1. ^ a b "MRS Medal". Materials Research Society. Retrieved 6 December 2018.
  2. ^ https://scholar.google.com/citations?user=46umSWsAAAAJ&hl=en
  3. ^ "Phonon Engineering"
  4. ^ Balandin, Alexander; Wang, Kang L. (1998-07-15). "Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well". Physical Review B. 58 (3). American Physical Society (APS): 1544–1549. doi:10.1103/physrevb.58.1544. ISSN 0163-1829.
  5. ^ Kotchetkov, D.; Zou, J.; Balandin, A. A.; Florescu, D. I.; Pollak, Fred H. (2001-12-24). "Effect of dislocations on thermal conductivity of GaN layers". Applied Physics Letters. 79 (26). AIP Publishing: 4316–4318. doi:10.1063/1.1427153. ISSN 0003-6951.
  6. ^ Balandin, A.; Morozov, S.V.; Cai, S.; Li, R.; Wang, K.L.; Wijeratne, G.; Viswanathan, C.R. (1999). "Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications". IEEE Transactions on Microwave Theory and Techniques. 47 (8). Institute of Electrical and Electronics Engineers (IEEE): 1413–1417. doi:10.1109/22.780388. ISSN 0018-9480.
  7. ^ Fonoberov, Vladimir A.; Balandin, Alexander A. (2004-12-13). "Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes". Applied Physics Letters. 85 (24). AIP Publishing: 5971–5973. doi:10.1063/1.1835992. ISSN 0003-6951.
  8. ^ Balandin, Alexander A.; Ghosh, Suchismita; Bao, Wenzhong; Calizo, Irene; Teweldebrhan, Desalegne; Miao, Feng; Lau, Chun Ning (2008). "Superior Thermal Conductivity of Single-Layer Graphene". Nano Letters. 8 (3). American Chemical Society (ACS): 902–907. doi:10.1021/nl0731872. ISSN 1530-6984.
  9. ^ Nika, D. L.; Ghosh, S.; Pokatilov, E. P.; Balandin, A. A. (2009-05-18). "Lattice thermal conductivity of graphene flakes: Comparison with bulk graphite". Applied Physics Letters. 94 (20). AIP Publishing: 203103. arXiv:0904.0607. doi:10.1063/1.3136860. ISSN 0003-6951.
  10. ^ Nika, D. L.; Pokatilov, E. P.; Askerov, A. S.; Balandin, A. A. (2009-04-07). "Phonon thermal conduction in graphene: Role of Umklapp and edge roughness scattering". Physical Review B. 79 (15). American Physical Society (APS): 155413. doi:10.1103/physrevb.79.155413. ISSN 1098-0121.
  11. ^ Ghosh, Suchismita; Bao, Wenzhong; Nika, Denis L.; Subrina, Samia; Pokatilov, Evghenii P.; Lau, Chun Ning; Balandin, Alexander A. (2010-05-09). "Dimensional crossover of thermal transport in few-layer graphene". Nature Materials. 9 (7). Springer Science and Business Media LLC: 555–558. arXiv:1003.5247. doi:10.1038/nmat2753. ISSN 1476-1122.
  12. ^ Liu, G.; Stillman, W.; Rumyantsev, S.; Shao, Q.; Shur, M.; Balandin, A. A. (2009-07-20). "Low-frequency electronic noise in the double-gate single-layer graphene transistors". Applied Physics Letters. 95 (3). AIP Publishing: 033103. arXiv:0908.3304. doi:10.1063/1.3180707. ISSN 0003-6951.
  13. ^ The layman description of the unusual thermal properties of graphene can be found in IEEE Spectrum feature article "Link to journal" Archived 2019-01-20 at the Wayback Machine
  14. ^ Teweldebrhan, Desalegne; Goyal, Vivek; Rahman, Muhammad; Balandin, Alexander A. (2010). "Atomically-thin crystalline films and ribbons of bismuth telluride". Applied Physics Letters. 96 (5). AIP Publishing: 053107. doi:10.1063/1.3280078. ISSN 0003-6951.
  15. ^ Teweldebrhan, Desalegne; Goyal, Vivek; Balandin, Alexander A. (2010-04-14). "Exfoliation and Characterization of Bismuth Telluride Atomic Quintuples and Quasi-Two-Dimensional Crystals". Nano Letters. 10 (4). American Chemical Society (ACS): 1209–1218. doi:10.1021/nl903590b. ISSN 1530-6984.
  16. ^ J. M. Khan, C. Nolen, D. Teweldebrhan, A. A. Balandin, 218th ECS Meeting, Volume 33, Issue 13 - October 10–15, 2010, Las Vegas, NV State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52) Editor(s): M. Overberg, J. Brown, P. Hesketh, W. Johnson, H. Ma, P. Vanysek "Link to journal"
  17. ^ "APS Fellowship". American Physical Society. Retrieved 6 December 2018.
  18. ^ "NTC Congratulates New IEEE Fellows". IEEE. Retrieved 6 December 2018.
  19. ^ IEEE Nanotechnology Council (NTC): "Link to site" Archived 12 October 2011 at the Wayback Machine
  20. ^ Physics Org: "Link to site"
  21. ^ "FCRP Professor Receives 2011 IEEE Pioneer Award in Nanotechnology". SRC Highlight. 20 April 2011. Retrieved 6 December 2018.
  22. ^ "Engineering Professor Wins International Award for Pioneering Work Expected to Improve Electronic Devices". University of California. 28 April 2011. Retrieved 6 December 2018.
  23. ^ "Alexander Balandin to receive the IEEE Pioneer Award in Nanotechnology for 2011". Nanowerk. 19 April 2011. Retrieved 6 December 2018.
  24. ^ "2011 Awards Presented at IEEE NANO 2011 in Portland, Oregon". UCR IEEE. Retrieved 6 December 2018.
  25. ^ "2011 OSA Fellows" (Press release). The Optical Society. Retrieved 6 December 2018.
  26. ^ "Complete List of SPIE Fellows". SPIE. Retrieved 6 December 2018.
  27. ^ "AAAS Fellows" (PDF). American Association for the Advancement of Science (AAAS). Retrieved 6 December 2018.
  28. ^ "Alexander Balandin received two new grants from DARPA and SRC". University of California, Riverside. 20 April 2018. Retrieved 6 December 2018.
  29. ^ https://balandingroup.ucr.edu/news.html
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