Strained silicon directly on insulator

Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed by MIT.^[1]

References

^ Taraschi, Gianni; Pitera, Arthur J.; McGill, Lisa M.; Cheng, Zhi-Yuan; Lee, Minjoo L.; Langdo, Thomas A.; Fitzgerald, Eugene A. (2002). "Strained-Si-on-insulator (SSOI) and SiGe-on-insulator (SGOI): Fabrication obstacles and solutions". MRS Proceedings. 745. doi:10.1557/PROC-745-N4.7. Retrieved 2016-03-11.

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[1] Taraschi, Gianni; Pitera, Arthur J.; McGill, Lisa M.; Cheng, Zhi-Yuan; Lee, Minjoo L.; Langdo, Thomas A.; Fitzgerald, Eugene A. (2002). "Strained-Si-on-insulator (SSOI) and SiGe-on-insulator (SGOI): Fabrication obstacles and solutions". MRS Proceedings. 745. doi:10.1557/PROC-745-N4.7. Retrieved 2016-03-11.

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