EKV MOSFET model
The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design.[1] It was developed by C. C. Enz, F. Krummenacher and E. A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s.[2] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design.
References
- ^ Enz, C. C.; Krummenacher, F.; Vittoz, E.A. (1995), "An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications", Analog Integrated Circuits and Signal Processing Journal on Low-Voltage and Low-Power Design, vol. 8 (published July 1995), pp. 83–114, doi:10.1007/BF01239381
- ^ Enz, C. C.; Krummenacher, F.; Vittoz, E.A. (1987), "A CMOS Chopper Amplifier", IEEE Journal of Solid-State Circuits, vol. 22, no. 3 (published June 1987), pp. 335–342, doi:10.1109/JSSC.1987.1052730