File:200 nm poly pitch aerial.JPG
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Summary
| Description |
English: This is the top-down aerial image of a 200 nm pitch gate line pattern formed with an alternating phase-shift mask, where the black area indicates where the intensity is below the threshold for exposing photoresist on a 193 nm 0.93 NA lithography tool. Since this represents an idealized case, purely coherent illumination has been assumed. For simplification, the polarization effect has been neglected in this image as well. The waviness observed in the linewidth is due to the effect of coherent illumination when the image is not a pure line but is bounded on top and bottom. |
| Date | 1 November 2007 (original upload date) |
| Source | Own work of Guiding light. |
| Author | Guiding light at English Wikipedia |
Licensing
Guiding light at English Wikipedia, the copyright holder of this work, hereby publishes it under the following licenses:
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
This file is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported, 2.5 Generic, 2.0 Generic and 1.0 Generic license.
Attribution: Guiding light at English Wikipedia
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Original upload log
Transferred from en.wikipedia to Commons by Jay8g using CommonsHelper.
The original description page was here. All following user names refer to en.wikipedia.
- 2007-11-06 15:52 Oleg Alexandrov 361×423× (37191 bytes) And fiddle a bit with the text to make it more visible. Same license.
- 2007-11-06 15:39 Oleg Alexandrov 365×440× (32915 bytes) Crop the extra whitespace background. Same license.
- 2007-11-01 02:38 Guiding light 640×512× (37219 bytes) This is the top-down aerial image of a 200 nm pitch gate line pattern, where the black area indicates where the intensity is below the threshold for exposing photoresist on a 193 nm 0.93 NA lithography tool. Since this represents an idealized case, purely
File history
Click on a date/time to view the file as it appeared at that time.
| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 00:30, 1 September 2011 | | 361 × 423 (36 KB) | File Upload Bot (Magnus Manske) | {{BotMoveToCommons|en.wikipedia|year={{subst:CURRENTYEAR}}|month={{subst:CURRENTMONTHNAME}}|day={{subst:CURRENTDAY}}}} {{Information |Description={{en|This is the top-down aerial image of a 200 nm pitch gate line pattern formed with an alternating phase- |
File usage
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