Hydrogen silsesquioxane (HSQ) is class of inorganic compounds with the chemical formula [HSiO3/2]n. Such clusters are specific representatives of the family of silsesquioxanes with the formula [RSiO3/2]n (R = alkyl, halide, alkoxide, etc.). The most widely studied member of the hydrogen silsesquioxanes is the cubic cluster H8Si8O12.
HSQ has been used in photolithography and Electron-beam lithography due to the fine resolution achievable (~10 nm). Thickness of the coated resist has been reported to play a major role in the achievable resolution.
A collection of practical knowledge for using HSQ is provided by Georgia Tech.
- David B. Cordes; Paul D. Lickiss; Franck Rataboul (2010). "Recent Developments in the Chemistry of Cubic Polyhedral Oligosilsesquioxanes". Chem. Rev. 110 (4): 2081–2173. doi:10.1021/cr900201r. PMID 20225901.
- Grigorescu, A. E.; van der Krogt, M. C.; Hagen, C. W.; Kruit, P. (2007). "10 nm lines and spaces written in HSQ, using electron beam lithography". Microelectronic Engineering. 84 (5–8): 822–824. doi:10.1016/j.mee.2007.01.022.
- Tavakkoli, A.; Piramanayagam, S. N.; Ranjbar, M.; Sbiaa, R.; Chong, T. C. (2011). "Path to achieve sub-10-nm half-pitch using electron beam lithography". Journal of Vacuum Science and Technology B. 29 (1): 011035. Bibcode:2011JVSTB..29a1035T. doi:10.1116/1.3532938.
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