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February 14, 1967 |
|Institutions||École Polytechnique Fédérale de Lausanne|
|Alma mater||University of Clermont-Ferrand
|Notable awards||CNRS Award|
Grandjean was born in Dijon, France, and is a citizen of that country. He studied at the University of Clermont-Ferrand and Nice-Sophia Antipolis. In 1991, he joined the Solid-State Physics and Solar Energy Laboratory, a division of the French National Center for Scientific Research where he studied physical properties of nanostructures. By 1994 he obtained his Ph.D. and became a CNRS winner. Later on, as a senior research fellow, he worked at the Research Center for Heteroepitaxy and its Applications, a division of Sophia Antipolis. In 2004 he became a tenure professor at the École Polytechnique Fédérale de Lausanne and in June 2009 assisted in the creation of the Novagan startup, following by becoming a director of the Laboratory of Advanced Semiconductors for Photonics and Electronics where he still serves.
In August 1999 he along with his colleagues have discovered that gallium nitride (GaN) and quantum dots (QDs) can grow due to the 800 °C (1,470 °F) temperature once injected into aluminium nitride (AlN) matrix. By combining those and both molecular beam epitaxy and three molecular monolayers it produces a glowing white light. In September 1996 he and his group have successfully nitrated a sapphire. In December 1999 he used Stranski–Krastanov growth mode for room temperature photoluminescence by combining it with molecular beam epitaxy and gallium/aluminium nitride quantum dots.
- "Nicolas Grandjean". Google Scholar. Retrieved October 29, 2016.
- Florence Luy (December 10, 2009). "Nicolas Grandjean: Appointed Full Professor". École Polytechnique Fédérale de Lausanne. Retrieved December 27, 2013.
- B. Damilano; Nicolas Grandjean; F. Semond; J. Massies; M. Leroux (June 18, 2009). "From visible to white light emission by GaN quantum dots on Si(111) substrate". 75 (7). Applied Physics Letters: 962–964. Bibcode:1999ApPhL..75..962D. ISSN 0003-6951. doi:10.1063/1.124567.
- Nicolas Grandjean; J. Massies; M. Leroux (June 18, 2009). "Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers". 69 (14). Applied Physics Letters: 2071–2073. Bibcode:1996ApPhL..69.2071G. ISSN 0003-6951. doi:10.1063/1.116883.
- B. Damilano; Nicolas Grandjean; S. Dalmasso; J. Massies (June 18, 2009). "Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth". 75 (24): 751–3753. Bibcode:1999ApPhL..75.3751D. ISSN 0003-6951. doi:10.1063/1.125444.
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