Nicolas Grandjean

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Nicolas Grandjean
Born (1967-02-14) February 14, 1967 (age 50)
Dijon, France
Institutions École Polytechnique Fédérale de Lausanne
Alma mater University of Clermont-Ferrand
Nice-Sophia Antipolis
Notable awards CNRS Award

Nicolas Grandjean (born February 14, 1967) is a French professor of physics. His achievements include over 600 books and articles, giving him an h-index of 62.[1]


Grandjean was born in Dijon, France, and is a citizen of that country. He studied at the University of Clermont-Ferrand and Nice-Sophia Antipolis. In 1991, he joined the Solid-State Physics and Solar Energy Laboratory, a division of the French National Center for Scientific Research where he studied physical properties of nanostructures. By 1994 he obtained his Ph.D. and became a CNRS winner. Later on, as a senior research fellow, he worked at the Research Center for Heteroepitaxy and its Applications, a division of Sophia Antipolis. In 2004 he became a tenure professor at the École Polytechnique Fédérale de Lausanne and in June 2009 assisted in the creation of the Novagan startup, following by becoming a director of the Laboratory of Advanced Semiconductors for Photonics and Electronics where he still serves.[2]


In August 1999 he along with his colleagues have discovered that gallium nitride (GaN) and quantum dots (QDs) can grow due to the 800 °C (1,470 °F) temperature once injected into aluminium nitride (AlN) matrix. By combining those and both molecular beam epitaxy and three molecular monolayers it produces a glowing white light.[3] In September 1996 he and his group have successfully nitrated a sapphire.[4] In December 1999 he used Stranski–Krastanov growth mode for room temperature photoluminescence by combining it with molecular beam epitaxy and gallium/aluminium nitride quantum dots.[5]


  1. ^ "Nicolas Grandjean". Google Scholar. Retrieved October 29, 2016. 
  2. ^ Florence Luy (December 10, 2009). "Nicolas Grandjean: Appointed Full Professor". École Polytechnique Fédérale de Lausanne. Retrieved December 27, 2013. 
  3. ^ B. Damilano; Nicolas Grandjean; F. Semond; J. Massies; M. Leroux (June 18, 2009). "From visible to white light emission by GaN quantum dots on Si(111) substrate". 75 (7). Applied Physics Letters: 962–964. Bibcode:1999ApPhL..75..962D. ISSN 0003-6951. doi:10.1063/1.124567. 
  4. ^ Nicolas Grandjean; J. Massies; M. Leroux (June 18, 2009). "Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers". 69 (14). Applied Physics Letters: 2071–2073. Bibcode:1996ApPhL..69.2071G. ISSN 0003-6951. doi:10.1063/1.116883. 
  5. ^ B. Damilano; Nicolas Grandjean; S. Dalmasso; J. Massies (June 18, 2009). "Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth". 75 (24): 751–3753. Bibcode:1999ApPhL..75.3751D. ISSN 0003-6951. doi:10.1063/1.125444.