Cadmium selenide
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| Names | |
|---|---|
| IUPAC name
Cadmium selenide[citation needed]
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| Systematic IUPAC name
Selanylidenecadmium[2] | |
| Other names | |
| Identifiers | |
3D model (JSmol)
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| ChEBI | |
| ChemSpider | |
| ECHA InfoCard | 100.013.772 |
| EC Number |
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| 13656 | |
| MeSH | cadmium+selenide |
PubChem CID
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| RTECS number |
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| UN number | 2570 |
CompTox Dashboard (EPA)
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| Properties | |
| CdSe | |
| Molar mass | 191.385 g·mol−1 |
| Appearance | Vivid, dark red, opaque crystals |
| Density | 5.816 g cm-3 |
| Melting point | 1,268 °C; 2,314 °F; 1,541 K |
| Band gap | 1.74 eV |
Refractive index (nD)
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2.5 |
| Structure | |
| Wurtzite | |
| C6v4-P63mc | |
| Tetrahedral | |
| Hazards | |
| GHS labelling: | |
  
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| Danger | |
| H301, H312, H331, H373, H410 | |
| P261, P273, P280, P301+P310, P311, P501 | |
| Related compounds | |
Other anions
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Cadmium oxide, Cadmium sulfide, Cadmium telluride |
Other cations
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Zinc selenide, Mercury(II) selenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Cadmium selenide (CdSe) is a solid, binary compound of cadmium and selenium. Common names for this compound are cadmium(II) selenide, cadmium selenide, and cadmoselite (a very rare mineral).
Cadmium selenide is a semiconducting material, but has yet to find many applications in manufacturing. This material is transparent to infra-red (IR) light, and has seen limited use in windows for instruments utilizing IR light.
Much current research on cadmium selenide has focused on nanoparticles. Researchers are concentrating on developing controlled syntheses of CdSe nanoparticles. In addition to synthesis, scientists are working to understand the properties of cadmium selenide, as well as apply these materials in useful ways.
Structure
Three crystalline forms of CdSe are known: wurtzite (hexagonal), sphalerite (cubic) and rock-salt (cubic). The sphalerite CdSe structure is unstable and converts to the wurtzite form upon moderate heating. The transition starts at about 130 °C, and at 700 °C it completes within a day. The rock-salt structure is only observed under high pressure.[3]
Production
The production of cadmium selenide has been carried out in two different ways. The preparation of bulk crystalline CdSe is done by the High-Pressure Vertical Bridgman method or High-Pressure Vertical Zone Melting.[4]
Cadmium selenide may also be produced in the form of nanoparticles. (see applications for explanation) Several methods for the production of CdSe nanoparticles have been developed: arrested precipitation in solution, synthesis in structured media, high temperature pyrolysis, sonochemical, and radiolytic methods are just a few.[5]
Production of cadmium selenide by arrested precipitation in solution is performed by introducing alkylcadmium and trioctylphosphine selenide (TOPSe) precursors into a heated solvent under controlled conditions.[6]
- Me2Cd + TOPSe → CdSe + (byproducts).
Synthesis in structured environments refers to the production of cadmium selenide in liquid crystal or surfactant solutions. The addition of surfactants to solutions often results in a phase change in the solution leading to a liquid crystallinity. A liquid crystal is similar to a solid crystal in that the solution has long range translational order. Examples of this ordering are layered alternating sheets of solution and surfactant, micelles, or even a hexagonal arrangement of rods.
High temperature pyrolysis synthesis is usually carried out using an aerosol containing a mixture of volatile cadmium and selenium precursors. The precursor aerosol is then carried through a furnace with an inert gas, such as hydrogen, nitrogen, or argon. In the furnace the precursors react to form CdSe as well as several by-products.[5]
Applications
Cadmium selenide in its wurtzite crystal structure is an important II-VI semiconductor. As a semiconductor CdSe is an n-type semiconductor, which is difficult to dope p-type, however p-type doping has been achieved using nitrogen.[7] CdSe is also being developed for use in opto-electronic devices, laser diodes, nanosensing, and biomedical imaging.[8] They are also used being tested for use in high-efficiency solar cells[9][10][11] CdSe is also a suitable material for making thin-film transistors (TFTs).[12] TFTs made from this material were used in the first active-matrix liquid-crystal display showing a still picture in 1973.[13] However interest in CdSe for this application largely waned after the emergence of amorphous silicon technology in the late 1970s.
Most of the usefulness of CdSe stems from nanoparticles, that is particles with sizes below 100 nm. CdSe particles of this size exhibit a property known as quantum confinement. Quantum confinement results when the electrons in a material are confined to a very small volume. Quantum confinement is size dependent, meaning the properties of CdSe nanoparticles are tunable based on their size.[14]
Since CdSe nanoparticles have a size dependent fluorescence spectrum, they are finding applications in optical devices such as laser diodes. Using these particles, engineers are able to manufacture laser diodes that cover a large part of the electromagnetic spectrum.[15]
Along similar lines, doctors are developing these materials for use in biomedical imaging applications. Human tissue is permeable to far infra-red light. By injecting appropriately prepared CdSe nanoparticles into injured tissue, it may be possible to image the tissue in those injured areas.[16][17]
Safety information
Cadmium is a toxic heavy metal and appropriate precautions should be taken when handling it and its compounds. Selenides are toxic in large amounts.[18]
References
- ^ a b "cadmium selenide (CHEBI:50834)". Chemical Entities of Biological Interest (ChEBI). UK: European Bioinformatics Institute. IUPAC Names.
- ^ "cadmium selenide - PubChem Public Chemical Database". The PubChem Project. USA: Nation Center for Biotechnology Information. Descriptors Computed from Structure.
- ^ Lev Isaakovich Berger (1996). Semiconductor materials. CRC Press. p. 202. ISBN 0849389127.
- ^ II-VI compound crystal growth, HPVB & HPVZM basics
- ^ a b Didenko, Yt; Suslick, Ks (2005). "Chemical aerosol flow synthesis of semiconductor nanoparticles". Journal of the American Chemical Society. 127 (35): 12196–7. doi:10.1021/ja054124t. ISSN 0002-7863. PMID 16131177.
{{cite journal}}: Unknown parameter|month=ignored (help)CS1 maint: multiple names: authors list (link) - ^ Murray, C. B.; Norris, D. J.; Bawendi, M. G. (1993). "Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites". Journal of the American Chemical Society. 115: 8706. doi:10.1021/ja00072a025.
- ^ T Ohtsuka, J Kawamata, Z Zhu, T Yao (1994). "p-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source". Applied Physics Letters. 65: 466. doi:10.1063/1.112338.
{{cite journal}}: CS1 maint: multiple names: authors list (link) - ^ Ma, C; Ding, Y; Moore, D; Wang, X; Wang, Zl (2004). "Single-crystal CdSe nanosaws". Journal of the American Chemical Society. 126 (3): 708–9. doi:10.1021/ja0395644. ISSN 0002-7863. PMID 14733532.
{{cite journal}}: Unknown parameter|month=ignored (help)CS1 maint: multiple names: authors list (link) - ^ Califano, Marco; Zunger, Alex; Franceschetti, Alberto (2004). "Direct carrier multiplication due to inverse Auger scattering in CdSe quantum dots". Applied Physics Letters. 84: 2409. doi:10.1063/1.1690104.
- ^ Schaller, Richard D.; Petruska, Melissa A.; Klimov, Victor I. (2005). "Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals". Applied Physics Letters. 87: 253102. doi:10.1063/1.2142092.
- ^ Hendry, E.; Koeberg, M; Wang, F; Zhang, H; De Mello Donegá, C; Vanmaekelbergh, D; Bonn, M (2006). "Direct Observation of Electron-to-Hole Energy Transfer in CdSe Quantum Dots". Physical Review Letters. 96 (5): 057408. Bibcode:2006PhRvL..96e7408H. doi:10.1103/PhysRevLett.96.057408. PMID 16486988.
- ^ J. DeBaets et al, "High-voltage polycrystalline CdSe thin-film transistors", IEEE Trans. Electron Devices, vol. ED-37, pp. 636-639, Mar. 1990, DOI: 10.1109/16.47767.
- ^ T.P. Brody, J.A. Asars and G.D. Dixon, "A 6x6 inch 20 lines- per-inch liquid-crystal display panel", IEEE Trans. Electron Devices, vol. ED-20, pp. 995-1001, Nov. 1973, DOI: 10.1109/T-ED.1973.17780.
- ^ Nanotechnology Structures - Quantum Confinement
- ^ Colvin, V. L.; Schlamp, M. C.; Alivisatos, A. P. (1994). "Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer". Nature. 370 (6488): 354. doi:10.1038/370354a0.
{{cite journal}}: CS1 maint: multiple names: authors list (link) - ^ Chan, W. C.; Nie, S. M. (1998). "Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection". Science. 281 (5385): 2016. doi:10.1126/science.281.5385.2016. PMID 9748158.
{{cite journal}}: CS1 maint: multiple names: authors list (link) - ^ Bruchez, M.;Moronne, M.; Gin, P.; Weiss, S.; Alivisatos, A. P. (1998). Science. 281: 2013.
{{cite journal}}: Missing or empty|title=(help)CS1 maint: multiple names: authors list (link) - ^ Additional safety information available at www.msdsonline.com, search 'cadmium selenide.'