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==Education and career== |
==Education and career== |
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Thøgersen completed her master's degree from the Department of Physics, University of Oslo, in 2004<ref>{{cite web |title=CV |url=https://annettthogersen.com/cv/ |website=Annett Thøgersen personal website |access-date=22 June 2021}}</ref><ref>{{cite book |last1= |
Thøgersen completed her master's degree from the Department of Physics, University of Oslo, in 2004<ref>{{cite web |title=CV |url=https://annettthogersen.com/cv/ |website=Annett Thøgersen personal website |access-date=22 June 2021}}</ref><ref>{{cite book |last1=Thøgersen |first1=Annett |title=A TEM study of the structural changes in "supermartensitic stainless steel" during deformation and welding |date=2004 |publisher=University of Oslo |url=https://docs.google.com/open?id=0BxOaIrp0Lej1OWJhM2E2OTktZTUyZi00ZDc3LWJlZDUtODZiMTMzMDVhZTBi |access-date=22 June 2021}}</ref> and earned a PhD in physics in 2009 with a dissertation entitled ''TEM and XPS studies of nanocrystals and clusters in nanostructured materials used for memory storage applications''.<ref>{{cite book |last1=Thøgersen |first1=Annett |title=TEM and XPS studies of nanocrystals and clusters in nanostructured materials used for memory storage applications. |date=2009 |publisher=University of Oslo |url=http://urn.nb.no/URN:NBN:no-22052 |access-date=22 June 2021}}</ref> |
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Jensen was in 2019 awarded a prestigious Young Research talent project from the Norwegian Research Council. In the project named "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices (GO2DEVICE)",<ref>{{cite web |title=Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices |url=https://prosjektbanken.forskningsradet.no/en/project/FORISS/301740?Kilde=FORISS&distribution=Ar&chart=bar&calcType=funding&Sprak=no&sortBy=date&sortOrder=desc&resultCount=30&offset=90&TemaEmne.2=IKT-n%C3%A6ringen |website=RCN Project bank |publisher=The Research Council of Norway |access-date=16 June 2021}}</ref> fabrication of a high-electron-mobility transistor (HEMT) based on novel (M,Ga)2O3 thin film heterostructures will be pursued (M = Al, In). Leading up to this project she has specialized in using photoemission spectroscopy to study [[band gap]] variations and band alignment in semiconducting materials. In addition to the GO2DEVICE project she is active in several research projects such as "A highly efficient and stable electrode for solar-driven water electrolysis, interrogated by advanced operando and in situ techniques" (Solopp) and the project "Centrifuge Nano Technology: Nano silicon anodes for Li-ion batteries" (DOVRE). |
Jensen was in 2019 awarded a prestigious Young Research talent project from the Norwegian Research Council. In the project named "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices (GO2DEVICE)",<ref>{{cite web |title=Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices |url=https://prosjektbanken.forskningsradet.no/en/project/FORISS/301740?Kilde=FORISS&distribution=Ar&chart=bar&calcType=funding&Sprak=no&sortBy=date&sortOrder=desc&resultCount=30&offset=90&TemaEmne.2=IKT-n%C3%A6ringen |website=RCN Project bank |publisher=The Research Council of Norway |access-date=16 June 2021}}</ref> fabrication of a high-electron-mobility transistor (HEMT) based on novel (M,Ga)2O3 thin film heterostructures will be pursued (M = Al, In). Leading up to this project she has specialized in using photoemission spectroscopy to study [[band gap]] variations and band alignment in semiconducting materials. In addition to the GO2DEVICE project she is active in several research projects such as "A highly efficient and stable electrode for solar-driven water electrolysis, interrogated by advanced operando and in situ techniques" (Solopp) and the project "Centrifuge Nano Technology: Nano silicon anodes for Li-ion batteries" (DOVRE). |
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Revision as of 16:55, 22 June 2021
Annett Thøgersen | |
|---|---|
| Born | 27 January 1980 |
| Nationality | Norwegian |
| Alma mater | University of Oslo |
| Occupation | Physicist |
Annett Thøgersen (born 1980) is a Norwegian physicist working mainly with transmission electron microscopy studies of inorganic materials and nanostructures. She is Senior Research Scientist at SINTEF[1] in Oslo, Norway.
Education and career
Thøgersen completed her master's degree from the Department of Physics, University of Oslo, in 2004[2][3] and earned a PhD in physics in 2009 with a dissertation entitled TEM and XPS studies of nanocrystals and clusters in nanostructured materials used for memory storage applications.[4]
Jensen was in 2019 awarded a prestigious Young Research talent project from the Norwegian Research Council. In the project named "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices (GO2DEVICE)",[5] fabrication of a high-electron-mobility transistor (HEMT) based on novel (M,Ga)2O3 thin film heterostructures will be pursued (M = Al, In). Leading up to this project she has specialized in using photoemission spectroscopy to study band gap variations and band alignment in semiconducting materials. In addition to the GO2DEVICE project she is active in several research projects such as "A highly efficient and stable electrode for solar-driven water electrolysis, interrogated by advanced operando and in situ techniques" (Solopp) and the project "Centrifuge Nano Technology: Nano silicon anodes for Li-ion batteries" (DOVRE).
References
- ^ "Annett Thøgersen". Employee profile page. SINTEF. Retrieved 22 June 2021.
- ^ "CV". Annett Thøgersen personal website. Retrieved 22 June 2021.
- ^ Thøgersen, Annett (2004). A TEM study of the structural changes in "supermartensitic stainless steel" during deformation and welding. University of Oslo. Retrieved 22 June 2021.
- ^ Thøgersen, Annett (2009). TEM and XPS studies of nanocrystals and clusters in nanostructured materials used for memory storage applications. University of Oslo. Retrieved 22 June 2021.
- ^ "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices". RCN Project bank. The Research Council of Norway. Retrieved 16 June 2021.