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A '''homojunction''' is a [[semiconductor]] interface that occurs between layers of similar semiconductor material, these materials having non-equal [[band gap]]s but typically have different [[doping (semiconductor)]]. In such a structure, the implementable [[diode]] characteristics can closely approach those of an idealized diode. Furthermore, the diode model parameters that define the diode current vs. voltage response can be tuned by adjusting the thicknesses and band gaps of the layers.
A '''homojunction''' is a [[semiconductor]] interface that occurs between layers of similar semiconductor material, these materials have equal [[band gap]]s but typically have different [[doping (semiconductor)]]. In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as [[silicon]], this is called a [[pn junction]]. This doesn't have to be the case though, the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a [[heterojunction]].

In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as [[silicon]], this is called a [[pn junction]]. This doesn't have to be the case though, the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a [[heterojunction]].

== Bibliography ==
* {{Harvard reference
| Surname1 = Feucht
| Given1 = D. Lion
| Surname2 = Milnes
| Given2 = A.G.
| Title = Heterojunctions and metal-semiconductor junctions
| Publisher = [[Academic Press]]
| Place = [[New York]] and [[London]]
| Year = 1970}}, ISBN 0-12-498050-3. A somewhat dated reference respect to applications, but always a good introduction to basic principles of heterojunction devices.


==See also==
==See also==

Revision as of 22:36, 2 December 2007

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping (semiconductor). In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as silicon, this is called a pn junction. This doesn't have to be the case though, the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a heterojunction.

See also