Gagik Shmavonyan

Gagik Shmavonyan
Professor (2017) D.Sc. in Electronic Engineering (2009) Ph.D. in Physics (1996) M.Sc. in Electronic Engineering (1985)
Born	(1963-05-12) May 12, 1963 Yerevan, Armenia
Title	Professor at National Polytechnic University of Armenia International Expert in Nanotechnology at LarrainVial Investment & Advisory Company
Spouse	Lili Karapetyan
Children	Astghik Shmavonyan Areg Shmavonyan
Parent	Shmavon Shmavonyan Margo Gulyan

Gagik Shmavonyan (Armenian: Գագիկ Շմավոնյան) Professor at Microelectronics and Biomedical Devices Department, National Polytechnic University of Armenia . He is Leader of “NanoHi” Nanotechnology research group, as well as International Expert in Nanotechnology, Scientific Coordinator of multidisciplinary research group of scientific consultants from different countries (Switzerland, Russia, etc.) at LarrainVial Investment and Advisory Company, Santiago de Chile, Chile.

He got his PhD in Physics in 1996 and D.Sc in Engineering in 2009 at the same University. He did postdoc at National Taiwan University (2001-2002). He was a Invited/Visiting Scholar/Professor at the

• University of Hull, UK (2000, 2003),
• Polytechnic of Milan, Como, Italy (2004-2005),
• University of Bremen, Germany (2002, 2006),
• Free University Berlin, Germany (2011),
• Trinity College Dublin, CRANN, Ireland (2012),
• University of Santiago de Compostela, Spain (2013-2014)
• Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "Demokritos", Athens, Greece (2017) ,
• University of Cergy-Pontoise, France (2016, 2017).

RESEARCH INTERESTS:

• 2D atomic materials (graphene, etc.), smart materials, 2D hybrid atomic structures,
• 2D atomic devices, 2D flexible electronics,
• Optoelectronic devices: photoelectrochemical, photovoltaic and thermophotovoltaic cells, perovskite solar cells, semiconductor lasers and semiconductor optical amplifiers, etc.

INVENTIONS

NEW TECHNOLOGIES

• Single-step, cheap and ecologically clean technology for mass production of high quality and large size graphene and 2D materials (best in the world in 2017).
• Technology for obtaining graphene, 2013, Yerevan, Armenia.

NEW METHODS

• Method of reduction of the nano-defects in semiconductor heterointerface, 2013.
• Method of folding of two-dimensional materials, 2013.
• Fabrication method of the light-emitting nanostructured devices, 2013
• Fabrication method of optoelectronic devices with quantum wells, 2013.
• Measurement method of the deflection of the cantilever of the atomic force microscope, 2011.
• Method for obtaining Ge nanolayer on silicon substrate, 2008.
• Method for fabrication of tip, 2008.
• Method of determining refractive indexes of compound semiconductor materials of quantum structure, 2004.
• Method of determining energy spectrum of solid surface states, 1991.

NEW DEVICES

• n-GaSb/p-GaSb/n-GaAs heterostructure thermophotovoltaic cell, Hull an Oxford (best in the world in 2003).
• InGaAsP/InP one wavelength tunable semiconductor laser, Taipei, Taiwan (best in the world in 2002).
• InGaAsP/InP two wavelength tunable semiconductor laser, Taipei, Taiwan (best in the world in 2002).
• InGaAsP/InP semiconductor optical amplifier, Taipei, Taiwan (best in the world in 2002).
• GaAs solar cell, Como, 2005, Italy.
• Equipment for determination of refractive indices of compound semiconductor materials of multilayer quantum structures, 2008, Yerevan, Armenia.

NEW EFFECTS

• Bi-directional guided effect of lasing mode in a bending waveguide of semiconductor optical amplifier, 2014;
• An optical switching effect in one semiconductor optical amplifier for optical communication band, 2014;
• The effect of separate confinement heterostructure layer thickness, 2014;

NEW STATACCESSARIESNEW EFFECTSACCESSARIES

• Mechanical Ballpoint Nanopencil, 2015.
• Mechanical Ballpoint Pencil, 2013.

RESEARCH AWARDS

• Albert Nelson Marquis Lifetime Achievement Award, Awarded by the selection committee of Marquis Who's Who, USA,2017
• CleanTech Oscar Prize (1st prize and National winner) at UNIDO Cleantech Open Global Ideas Competition (Startup Acceleration Program), 2015, Silicon Valley, USA; Awarded by UN Industrial Development Organization (UNIDO) for the project “Graphene-assisted thermophotovoltaic cells”.
• CleanTech Award (1st prize and winner) at UNIDO Cleantech Open Global Ideas Competition (Startup Acceleration Program), 2014; Awarded by UN Industrial Development Organization (UNIDO) for the project “Graphene and Graphene electronics”.
• ARPA Institute Invention Competition Award (3rd prize), Awarded by ARPA Institute for the project “Non-conventional, cheap and easy technology for large-scale production of graphene”, Los Angeles, CA, USA, September, 2014.
• ARPA Institute Invention Competition Award (2nd prize), Awarded by ARPA Institute for the project “Heterostructure thermophotovoltaic cells”, Los Angeles, CA, USA, September, 2013.
• Award of Marquis Who’s Who in the World, 28th edition, VIP Number 35541273, New Jersey, USA, 2800 p., 2010-2012.
• The best research publication Award (2nd prize). Awarded by SEUA for series of papers published in the field of semiconductor optical amplifiers and elaboration of signal in nanostructures published in 2004-2005, Yerevan, Armenia, December, 2005.

•  Student Graduation paper awards (1^st prize and Alexander Popov Diploma of Honor at Soviet Union Students’ Scientific Competition (Baku, Azerbaijan, 1986), 1^st prize for the best graduation paper at Republican Students’ Competition (Yerevan, Armenia, 1985), 1^st prize and Diploma for SEUA Students’ excellent research at 32^nd Scientific Competition (Yerevan, Armenia, 1985).

MEMBERSHIP

• COST Action MP1302 Nanospectroscopy, Management Committee member with Observer status,
• COST Action MP0901 "Designing Novel Materials for Nanodevices - from Theory to Practice (NanoTP)", Management Committee Member,
• Institute of Physics (IOP), Chartered Physicist (UK),
• American Physical Society (APS) (USA)
• Athens Institute for Education and Research (ATINER) (Greece)
• St. Petersburg Scientific and Educational Society (Russia)

LANGUAGES

• Armenian (native),
• English (fluent),
• Russian (fluent).

LIST OF PUBLICATIONS

REFEREED JOURNAL PAPERS

1. Shmavonyan G.Sh. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, J. Nanomater. Mol. Nanotechnol, 6 (7) (Suppl.), 46 (2017). DOI: 10.4172/2324-8777-C1-017.
2. Shmavonyan G.Sh., Vázquez Vázquez C., López-Quintela M.A. Single-step rubbing method for mass production of large-size and defect-free two-dimensional material nanostripes, films and hybrid nanostructures on any substrate, Transl. Mater. Res., IOP Publishing, 4 (2), 025001 (2017). DOI: https://doi.org/10.1088/2053-1613/aa783d
3. Shmavonyan G.Sh., Mailian A.R. Graphite Pencil Drawn Lines: A Nanomaterial or Few Layer Graphene/Graphite Layered Structure, Advances in Engineering Research, Atlantis press, 35, 12-15 (2016), DOI: 10.2991/gmee-15.2015.4.
4. Kumar D.N.T., Shmavonyan G. Understanding JikesRVM in the Context of Cryo-EM/TEM/SEM Imaging Algorithms and Applications - A General Informatics Introduction from a Software Architecture View Point, International Journal of Applied Research on Information Technology and Computing, 7 (1), 1-7, (2016), DOI: 10.5958/0975-8089.2016.00001.4.
5. Kumar D.N.T., Rosa A.H., Yonggui L., Shmavonyan G. An informatics technical note on interaction of DNA-graphene chemical sensor system as reaction–diffusion wave-based computing system in ionised gaseous environments and their applications using theoretical studies and scientific computation overview, International Journal of Applied Research Technology and Computing, 5 (3), 214-222 (2014), India, DOI: 10.5958/0975-8089.2014.00013.X.
6. Kumar N., Cruz N.C., Rangel E., Shmavonyan G. An introductory informatics theoretical framework, based on an integrable lattice model using quantized function algebras, for studying DNA-Ionized gas interaction system, International Journal of Applied Research on Information Technology and Computing, 5 (1), 1-13 (2014), India, DOI: 10.5958/j.0975-8089.5.1.001.
7. Aroutiounian V.M., Shmavonyan G.Sh., Zadoyan O.A., Gambaryan K.M., Zadoyan A.M. Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells, Journal of Contemporary Physics, 49 (6), 257-262 (2014), Allerton Press Inc, New York, DOI: IO.3103/S106833721 4060036, Original Russian: Izvestiya NAN Armenii Fizika, 49 (6), 393-399 (2014).
8. Mailian A.R., Shmavonyan G.Sh., Mailian M.R. Self-Organized Graphene/Graphite structures obtained directly on paper, arXiv:1402.3929 [cond-mat.mtrl-sci], February 2014.
9. Shmavonyan G.Sh., Harutyunyan V.M., Sevoyan G.G. Enlarging the surface area of monolayer graphene synthesized by mechanical exfoliation, Armenian Journal of Physics, NAS Armenia, 6 (1), 1-6 (2013), ISSN 1829-1171.
10. Shmavonyan G.Sh., Asatryan H.G. The Role of Separate Confinement Heterostructure Layer in Designing Semiconductor Nanostructured Optoelectronic Devices, SPIE Proceedings, 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), 8549, pp. 85492A-1-4, 2012 (December 19-22, 2011, Kanpur, India), DOI: 10.1117/12.927404.
11. Shmavonyan G.Sh., Zendehbad S.M. Treatment of ZnO Nanowires on Si(111), Scientia Iranica: Nanotechnology, 18 (3), 816-819 (2011), Elsevier B.V., DOI: 10.1016/j.scient.2011.06.004.
12. Shmavonyan G.Sh. Improving characteristics of nanostructured devices by separate confinement heterostructure layer, Armenian Journal of Physics, NAS Armenia, 4 (1). 56-61 (2011), ISSN 1829-1171.
13. Shmavonyan G.Sh., Zadoyan A.M., Zadoyan O.A., Hairapetyan V.M. The incensement of the sensitivity of ion-selective biosensor via inserting superlattice, Journal “Proceedings of Engineering Academy of Armenia”, 8 (2), 382-384 (2011).
14. Shmavonyan G.Sh., Zadoyan A.M., Khachatryan V.D., Hayrapetyan V.M., Asatryan H.G. Determination of forbidden bandgap and dielectric constant of InxGa1-xAsyP1-y material at room and low temperatures, Journal “Proceedings of Engineering Academy of Armenia”, 7 (3), 25-36, 2010.
15. Shmavonyan G.Sh., Zadoyan A.M., Khachatryan V.D., Hayrapetyan V.M., Asatryan H.G. Determination of effective masses of heavy and light holes and lattice constant of InxGa1-xAsyP1-y material at room and low temperatures, Journal “Proceedings of Engineering Academy of Armenia”, 7 (2), 342-346, 2010.
16. Shmavonyan G.Sh. Focused ion beam treatment of ZnO nanowires, Moldavian Journal of the Physical Sciences, 8 (2), 201-206, 2009, ISSN 1810-648X.
17. Shmavonyan G.Sh. Modification of nanowires by charged ions beams, Journal Elektrotechnica and Elektronica, CEEC press, Sofia, Bulgaria, 44 (5-6), 21-25, 2009, ISSN 0861-4717.
18. Shmavonyan G.Sh. Elaboration and investigation of semiconductor nanostructured optoelectronic devices, Armenian Journal of Physics, NAS Armenia, 2 (2), 95-121. 2009, ISSN 1829-1171.
19. Shmavonyan G.Sh., Zendehbad S.M. UHV STM and LEED studies of the nucleation and growth of Ge thin films on Si(113) substrates, IEEE Proceedings, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT'), p. 707-709, 2008, DOI: 10.1109/ICSICT.2008.4734629.
20. Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP superluminescent diodes, IEEE Proceedings, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), p. 1052-1054, 2008. DOI: 10.1109/ICSICT.2008.4734717.
21. Shmavonyan G.Sh. Novel effects in extremely broadband semiconductor optical amplifiers with non-identical quantum wells, Journal of Contemporary Physics, v. 43, # 3, p. 150-156, 2008, Publisher: Allerton Press Inc, New York, DOI: 10.3103/S1068337208030122, Original Russian: Izvestiya NAN Armenii Fizika, 43 (3), 232-240 (2008).
22. Shmavonyan G.Sh. Focused ion beam treatment of nanowires, Journal of Contemporary Physics, 43 (2), 86-90 (2008), Allerton Press Inc, New York, DOI: 10.3103/S1068337208020084. Original Russian: Izvestiya NAN Armenii, Fizika, 43 (2), 135–142 (2008).
23. Shmavonyan G.Sh. SEM and STM Investigations of Nanowires, Armenian Journal of Physics, NAS Armenia, 1 (2), 165-168, 2008, ISSN 1829-1171.
24. Shmavonyan G.Sh. SEM Investigations of the Surface and Cross-Section Features of ZnO NWs Under FIB Treatment, IEEE Proceedings, 14th International Workshop on the Physics of Semiconductor Devices, p. 385-388, 2007.
25. Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diodes, Izvestiya NAN Armenii tehnicheskie nauk, 60 (1), 153 - 156, 2007.
26. Buniatyan V.V., Aroutiounian V.M., Shmavonyan G.Sh., Buniatyan V.Vaz. Temperature dependencies of frequency characteristics of HTSC RLC circuit, Applied Surface Science, 252 (15), 5441-5444, 2006. DOI: 10.1016/j.apsusc.2005.12.049.
27. Tchelidze T., Chikoidze E., Shmavonyan G.Sh., Kereselidze T. Exciton Energies in the Stacks of ZnSe/CdSe Quantum Dots, Physica Status Solidi (c), 3 (3), 540-543, 2006. DOI: 10.1002/pssc.200564165.
28. Shmavonyan G. New phenomena in nanostructures, IEEE Proceedings, 8th International Conference on Solid State and Integrated-Circuit Technology (ICSICT), pp. 890-892, 2006, DOI 10.1109/ICSICT.2006.306562.
29. Shmavonyan G.Sh. Broadband Tuning in Optical Communication Band Using Fabry-Perot Laser Diodes, Izvestiya NAN Armenii tehnicheskie nauk, 59 (3), 615-618, 2006.
30. Shmavonyan G.Sh. The Role of Surface Active Species in Hetero-epitaxial Growth of Ge Thin Films and Nanostructures on Si(113) Substrates, Izvestiya NAN Armenii tehnicheskie nauk, 59 (2), 394-398, 2006.
31. Shmavonyan G.Sh. Low Cost Efficient Thermophotovoltaic Cells, Journal “Proceedings of Engineering Academy of Armenia”, 3 (2), 294-298, 2006.
32. Shmavonyan G.Sh. Optical switching effect in optical fiber communication systems, Izvestiya NAN Armenii tehnicheskie nauk, 58 (1), 132-136, 2005.
33. Lin C.-F., Su Y.-S., Wu C.-H., Shmavonyan G.Sh. Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with non-identical multiple quantum wells, IEEE Photonics Technology Letters, 16 (6), 1441-1443 (2004). DOI: 2.26. 10.1109/LPT.2004.827119
34. Bumby C.W., Shields P.A., Nicholas R.J., Fan Q., Shmavonyan G., May L., Haywood S.K. Improved Efficiency of GaSb/GaAs TPV Cells Using an Offset p-n Junction and Off-Axis (100) Substrates, AIP Conference Proceedings, 738 (1), 353-359 (2004). DOI: 10.1063/1.1841913.
35. Fan Q., May L., Shmavonyan G., Haywood S.K., Bumby C.W., Shields P.A., Nicholas R.J. Improved quantum efficiency in GaSb/GaAs heterojunction photovoltaic cells using an offset p-n junction, Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition (19th EU PVSEC), pp. 176-178, Paris, June 7-11, 2004.
36. Shmavonyan G.Sh. Novel bi-directional guided effect in bent-waveguide of semiconductor optical ampli¬fier, Izvestiya NAN Armenii tehnicheskie nauk, 57 (3), 454-459 (2004).
37. Shmavonyan G.Sh. Possible application of p-GaSb/n-GaAs diodes in thermophotovoltaic cells and satellite solar cells, Izvestiya NAN Armenii tehnicheskie nauk, 57 (2), 300-304 (2004), ISSN 0002-306X.
38. Yu D.-K., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells, SPIE Proceedings, 4986, 405-412 (2003). DOI: 10.1117/12.474385.
39. Tsai C.-W., Chang Y.-C., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band, SPIE Proceedings, 4989, 69-77 (2003), DOI: 10.1117/12.474821
40. Shmavonyan G.Sh. Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfaces, Physica status solidi (b), 229 (1), 89-92 (2002). DOI: 10.1002/1521-3951(200201)229:1< 89:AID-PSSB89>3.0.CO;2-5.
41. Panosyan J.R., Shmavonyan G.Sh. Surface excitons on CdTe and ZnO reflection and photo-luminescence spectra, Collected articles “Issues of increasing the efficiency of controlling technological processes”, SEUA press, pp. 118-123, 1996.
42. Panosyan J.R., Kasamanyan Z.A., Shmavonyan G.Sh. Size-quantized surface excitons on the CdTe-electrolyte interface, Soviet Physics: Semiconductors, New York, N.Y.: American Institute of Physics), 25 (6), 621-623 (1991)
43. Panosyan J.R., Kasamanyan Z.A., Shmavonyan G.Sh. Size-quantized surface excitons on the CdTe-electrolyte interface, Fizika i Tekhnika Poluprovodnikov, 25 (6), 1030-1033 (1991).
44. Kasamanyan Z.A., Mailyan A.R., Panosyan J.R., Shmavonyan G.Sh. Surface excitons in the reflection and electroreflection spectra of CdTe-electrolyte interface, Photoelectronics, Kiev-Odessa, Ukraine, 4, 40-46 (1991).
45. Panosyan J.R., Kasamanyan Z.A., Mailyan A.R., Shmavonyan G.Sh. Quantization of the rotation of the polarization plane of light reflected from the surface layer of a semiconductor, Soviet Physics - JETP Letters, 49 (8), 496-499 (1989).
46. Panosyan J.R., Kasamanyan Z.A., Mailyan A.R., Shmavonyan G.Sh. Quantization of rotation of the polarization plane of light reflected from semiconductor surface layer, Pis’ma Zh. Eksp. Teor. Fiz., 49 (8), 434-436 (1989).

PATENTS

1. López-Quintela M.A., Shmavonyan G.Sh., Vázquez Vázquez C. Method for producing sheets for graphene, Spanish patent ES 2 575 711 B2, Filling date: December 31, 2014, Application #: 201431974, Publication date: Nov. 3, 2016, http://invenes.oepm.es/InvenesWeb/detalle?referencia=P201431974, WIPO patent WO/2016/107942 A1, International Filling date: Nov. 19, 2015, Publication date: July 7, 2016. https://patentscope.wipo.int/search/en/detail.jsf?docId=WO2016107942 ,EPO patent EP15875286.5, International Filing date: July 18, 2017. US patent, Filling date: July 18, 2017.
2. Shmavonyan G.Sh. Mechanical Ballpoint Nanopencil, Patent of Armenia # 2944 A, IPC: B43K 21/00, Dated: February 23, 2015.
3. Shmavonyan G.Sh., Mailian A.R., Mailian M.R., Shmavonyan Gay. Method of obtaining graphene, Patent of Armenia # 2851 A, IPC: H01L 21/00, Dated: September 27, 2013.
4. Shmavonyan G.Sh., Zadoyan O.A., Zadoyan A.M., Shmavonyan Gay. Heterostructure thermophotovoltaic cell, Patent of Armenia # 2847, IPC: H01L 31/00, p. 9, Dated: January 1, 2014.
5. Shmavonyan G.Sh., Zadoyan O.A., Zadoyan A.M., Shmavonyan Gay. Method of reduction of the nano-defects in semiconductor heterointerface, Patent of Armenia # 2837, IPC: H01L 21/00, p. 7, Dated: July 9, 2013.
6. Shmavonyan G.Sh., Harutyunyan V.M. Method of folding of two-dimensional materials, Patent of Armenia # 2717 A, IPC: B43K 21/00, p. 6, Dated: February 25, 2013.
7. Shmavonyan G.Sh., Mailian A.R. Mechanical Ballpoint Pencil, Patent of Armenia # 2712 A, IPC: G01N 3/00, p. 6, Dated: February 25, 2013.
8. Shmavonyan G.Sh., Asatryan H.G. Fabrication method of the light-emitting nanostructured devices, Patent of Armenia # 2709 A, IPC: H01S 5/00 B82B 3/00, p. 6, Dated: January 25, 2013.
9. Shmavonyan G.Sh., Zadoyan O.A. Fabrication method of optoelectronic devices with quantum wells, Patent of Armenia # 2666 A, IPC: B82Y 20/00 G02F 1/00, p. 6, Dated: August 27, 2012.
10. Shmavonyan G.Sh., Grigoryants V.P. Measurement method of the deflection of the cantilever of the atomic force microscope, Patent of Armenia # 2577 A, IPC: G01B 15/00, p. 7, Dated: Dec. 26, 2011.
11. Shmavonyan G.Sh. One wavelength tunable semiconductor laser, Patent of Armenia # 2265 A2, IPC: 51 H01S 5/00, p. 6, Dated: November 12, 2008.
12. Shmavonyan G.Sh. Two wavelength tunable semiconductor laser, Patent of Armenia # 2264 A2, IPC: 51 H01S 5/00, p. 8, Dated: November 12, 2008.
13. Shmavonyan G.Sh. Semiconductor optical amplifier, Patent of Armenia # 2263 A2, IPC: 51 H01S 5/00, Dated: November 4, 2008.
14. Shmavonyan G.Sh. Gallium arsenide solar cell, Patent of Armenia # 2262 A2, IPC: 51 H01L 31/00, p. 6, Dated: November 21, 2008.
15. Shmavonyan G.Sh. Method for obtaining germanium nanolayer on silicon substrate, Patent of Armenia # 2261 A2, IPC: 51 H01L 21/00, p. 6, Dated: November 4, 2008.
16. Shmavonyan G.Sh. Method for fabrication of tip, Patent of Armenia # 2260 A2, IPC: 51 G12B 21/00, p. 6, Dated: November 4, 2008.
17. Shmavonyan G.Sh. Equipment for determination of refractive indices of compound semiconductor materials of multilayer quantum structures, Patent of Armenia # 2255 A2, IPC: 51 G01N 21/00, p. 7, Dated August 13, 2008.
18. Shmavonyan G.Sh. Method of determining refractive indexes of compound semiconductor materials of quantum structure, Patent of Armenia #1519 A2, IPC: 7 G01N 21/00, 8 p., 3 (31), Dated Sept. 27, 2004
19. Panosyan J.R., Kasamanyan Z.A., Shmavonyan G.Sh., Berberyan S.E. Patent of the Soviet Union SU1771270 (A1), 7 p, Dated June 22, 1992.
20. Panosyan J.R., Mailian A.R., Shmavonyan G.Sh., Apatyan A.A. Method of determining energy spectrum of solid surface states, Patent of the Soviet Union SU1693488 (A1), Bulletin No. М 43 (71), IPC: (51)5 G01N21/64, 5 p., Dated November 23, 1991.

BOOKS / RESEARCH MONOGRAPHS / CHAPTERS

1. Shmavonyan G.Sh. "Problems in Semiconductors, Optoelectronics and Nanotechnology Devices", Problem book, Momentum Press Collection in “Electronic Circuits and Semiconductor Devices”, Collection Editor: Dr. Ashok K. Goel, USA, 150 p., 2018 (in English) (in process).
2. Shmavonyan G.Sh. Monograph Semiconductor nanostrucured optolectronic devices, Ministry of Education of Republic of Armenia, “Engineer” press, Khachatryan N.A. (Eds.), Yerevan, Armenia, 250 p., 2017 (in Armenian), 2018 (in press).
3. Shmavonyan G.Sh. Monograph Chapter Graphene and two-dimensional atomic materials and their hybrid structures in the 3 Volume of the Coherent Textbook Optical Nanospectroscopy, Vol. 1: Fundamentals, Vol. 2: Methods, Vol. 3: Applications, McMillan N., Sheremet E., Fleischer M. (Eds.), Publisher De Gruyter, Budapest, Hungary, 2017 (in English) (in press).
4. Petrosyan O.H., Shmavonyan G.Sh., Vardanyan A.A. Nanoelectronic elements and devices, Academic manual, Ministry of Education of Republic of Armenia, “Engineer” press, Khachatryan N.A. (Eds.), Yerevan, Armenia, 326 p., 2017 (in Armenian).
5. Shmavonyan G.Sh. Basics of Nanotechnologies, Academic manual, Ministry of Education of Republic of Armenia, “Engineer” press, Khachatryan N.A. (Eds.), Yerevan, Armenia, 224 p., 2011 (in Armenian), ISBN 978-9939-55-605-5.
6. Ispiryan N.P., Shmavonyan G.Sh. Physics of Semiconductors, Problem book, Ministry of Education of Republic of Armenia, “Engineer” press, Khachatryan N.A. (Eds.), Yerevan, Armenia, 111 p., 2010 (in Armenian), ISBN 978-9939-55-438-9.
7. Buniatyan V.V., Shmavonyan G.Sh., Martirosyan N.V. Investigation methods of electronic and opto¬elec¬tro¬nic solid state materials and structures, Academic manual, Ministry of Education of Republic of Armenia, “Engineer” press, Khachatryan N.A. (Eds.), Yerevan, Armenia, 418 p., 2005 (in Armenian). ISBN 621.38.
   

REFEREED CONFERENCE PAPERS

1. Shmavonyan G.Sh. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, 2nd World Congress and Expo on Graphene & 2D Materials, p. 46, November 6-7, 2017, Frankfurt, GERMANY.
2. Burakova E., Besperstova G., Rukhov A., Dyachkova T., Bakunin E., Galunin E., Shmavonyan G., Tkachev A. Peculiarities of obtaining a catalyst for the synthesis of nanostructured carbon materials via thermal decomposition, Proceedings of the 11th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 119-122, June 23-25, 2017, Yerevan, ARMENIA.
3. Al-Saadi D., Pershin V., Galunin E., Shmavonyan G. Tkachev A., Ostrikov V. Modification of plastic lubricants using few-layered graphene, Proceedings of the 11th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 115-118, June 23-25, 2017, Yerevan, ARMENIA.
4. G. Shmavonyan, K. Hricovini, O. Heckmann, E. Boiakinov, W. Ndiaye, S. Vaiedelich, M. C. Richter, XPS analyses of as-rubbed mono- and few layer graphene films obtained by the substrates rubbing method, Joint Conferences of the 3rd European Graphene Forum (EGF) and Smart Materials and Surfaces (SMS Europe), p. 122, April 26-28, 2017, Paris, FRANCE.
5. Shmavonan G.Sh. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, Materials of the Young scientists conference on semiconductor physics “Lashkaryov’s readings”, NAS Ukraine, p. 111-112, 2017 (April 5-7, 2017, Kyiv, UKRAINE).
6. Shmavonyan G. The nanoengineering of nanostructures by focused ion beam treatment, The 4th Annual Conference on Optical Nanospectroscopy, p. 126, March 28-31, 2017, Lisbon, PORTUGAL.
7. Hovhannisyan S.S., Zadoyan O.A., Shmavonyan G.Sh. Raman mapping of bi-and triple layer garphene sample, NPUA Bulletin, p. 328-331, Yerevan, ARMENIA, November 21-25, 2016.
8. Shmavonyan G., Mailian A. Pencil drawn mono- and few layer graphene/graphite layered structures on any substrate, 3rd Annual Conference of the COST Action MP1302 Optical Nanospectroscopy III, p. 152, Rome, ITALY, March 22-25, 2016.
9. Zadoyan O.A., Zadoyan A.M., Shmavonyan G.Sh. Determination of the heterointerface quality of photovoltaic cell, NPUA Bulletin, part 1, p. 260-265, Yerevan, ARMENIA, November 16-20, 2015.
10. Shmavonyan G.Sh., Mailian A.R. Graphite pencil drawn lines: A nanomaterial or few layer graphene/graphite layered structure, Proceedings of the 2nd International Conference on Green Materials and Environmental Engineering (GMEE), Paper G035, Phuket, THAILAND, December 20-21, 2015.
11. Shmavonyan G.Sh., Mailian A.R. Few layer graphene on paper: Future of flexible electronics, International Symposium Disordered and Ordered Materials Analysis and Characterization (DOM), p. 55-56, Yerevan, ARMENIA, September 28-30, 2015.
12. Shmavonyan G.Sh., Zadoyan A.M. The study of double and triple layer graphene interface by spectroscopic Raman mapping, Proceedings of the 10th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 108-110, September 11-13, 2015, Yerevan, ARMENIA, ISBN 978-5-8084-1991-9.
13. Shmavonyan G.Sh., Vázquez Vázquez C., López-Quintela M.A. A non-conventional rubbing method for obtaining two-dimensional atomic materials for mass production, 5th International Colloids Conference: Surface Design and Engineering, Paper P067, June 21-24, 2015, Amsterdam, NETHERLANDS.
14. Shmavonyan G.Sh., Zadoyan O.A. III-V/Si monolithically integrated thermophotovoltaic cells, International Workshop on Solar Energy Materials (SOLMAT), Paper MAT19, June 17-18, 2014, Vipava, SLOVENIA.
15. Shmavonyan G.Sh., Sevoyan G.G. Study of the transition between double and triple layer graphene by Raman mapping, International Workshop on Solar Energy Materials (SOLMAT). Paper MAT18, June 17-18, 2014, Vipava, SLOVENIA.
16. Shmavonyan G.Sh., Mailian A.R., Mailian M.R., Vázquez Vázquez C., López-Quintela M.A. A non-conventional rubbing method for obtaining graphene, 4th International Colloids Conference: Surface Design and Engineering, Paper P3.07, June 15-18, 2014, Madrid, SPAIN.
17. Sevoyan G.G., Shmavonan G.Sh. Spectroscopic Raman mapping of double and triple layer graphene system, Materials of the Young scientists conference on semiconductor physics ”Lashkaryov’s readings 2014”, NAS Ukraine, p. 221-223, 2014 (April 2-4, 2014, Kyiv, UKRAINE).
18. Shmavonyan G.Sh. Graphene on paper: Future of flexible electronics, COST NanoTP MP0901 Annual scientific meeting, April 2-5, 2014, Nantes, FRANCE.
19. Mailian A., Mailian M., Shmavonyan G.Sh. Method of obtaining graphene and graphene-based electronic components and circuits with pencil directly on paper, Bulletin of the American Physical Society, 59 (1), Abstract C1.00007, p. 201, 2014 (APS March Meeting, Denver, Colorado, March 3–7, 2014, USA).
20. Shmavonyan G.Sh., Mailian A.R., Mailyan M.R., López-Quintela M.A. Obtaining graphene on paper from pencil drawn lines, European Conference on the Synthesis, Characterization and Applications of Graphene.(GRAPHEsp), Abstract book, p. 41, February 18-21, 2014, Lanzarote, SPAIN.
21. Shmavonyan G.Sh., Zadoyan O.A. Efficient thermophotovoltaic solar cells on bent substrates, Bulletin of the American Physical Society, 58 (4), Abstract S2.00032, APS April Meeting, April 13–16, 2013, Denver, Colorado, USA.
22. Shmavonyan G.Sh., Zadoyan O.A. Method for Reducing the Nano-Cracks on the Surface of the Hetero¬structure, Bulletin of the American Physical Society, 58 (1), Abstract H1.00339, 2013 (APS March Meeting, Baltimore, Maryland, March 18–22, 2013, USA).
23. Shmavonyan G., Mailian A., Mailian R. Anisotropy of Carrier Mobility in Multilayered Graphite Struc¬tures Obtained by Rubbing, The 10th International Conference on Nanosciences and Nanotechnologies (NN13), Abstract book, p. 280, July 9-12, 2013, Thessaloniki, GREECE.
24. Mailian A., Mailian R., Shmavonyan G. Characterization of Layer-on-Layer Graphite/Graphene Sheets by Raman Spectroscopy at 976 nm Excitation Wavelength, The 10th International Conference on Nanosciences and Nanotechnologies (NN13), Abstract book, p. 53, July 9-12, 2013, Thessaloniki, GREECE.
25. Shmavonyan G.Sh., Zadoyan O.A., Shmavonyan Gay.Sh, Efficient p-GaSb/n-GaSb/n-GaAs/InxGa1-xAs/Ge/ /Si thermophotovoltaic cells, Proceedings of the 9th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 18-23, 2013 (May 24-26, 2013, Yerevan, ARMENIA).
26. Shmavonyan G.Sh., Sevoyan G.G., Shmavonyan Gay.Sh, Enlarging the surface area of monolayer graphene, The 9th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 123-125, 2013 (May 24-26, 2013, Yerevan, ARMENIA).
27. Shmavonan G.Sh., Zadoyan O.A., Shmavonyan Gay.Sh. Monolithically integrated III-V/Si thermo-photo¬vol¬taic cells, Materials of the Young scientists conference on semiconductor physics ”Lashkaryov’s readings 2013”, NAS of Ukraine, p. 197-199, 2013 (April 2-4, 2012, Kyiv, UKRAINE).
28. Shmavonan G.Sh., Zadoyan O.A. Method for decreasing the sizes of defects in the heterointerface, International conference of students and young researchers in theoretical and experimental physics (HEUREKA-2012), Book of Abstracts, p. 93, April 19-22, 2012, Lviv, UKRAINE.
29. Shmavonan G.Sh., Zadoyan O.A. Thermophotovoltaic cells with bent substrates, 6th International Con¬fe¬rence on Material science and condensed matter physics, Book of Abstracts, p. 223, September 11-14, 2012, Chisnau, MOLDOVA.
30. Shmavonyan G. Modification of Nanostructures and STM Tips by Focused Ion Beam, Materials of the 2nd Scientific Meeting of the annual COST (European Cooperation in Science and Technology) meeting MP0901 “Designing novel materials for nanodevices: From Theory to Practice "NanoTP", Trieste, ITALY, November 12, 2011.
31. Shmavonan G.Sh. Exciton spectroscopy of semiconductors, Materials of the Young scientists conference on semiconductor physics ”Lashkaryov’s readings”, NAS of Ukraine, p. 128-130, 2011 (April 19-21, 2011, Kyiv, UKRAINE).
32. Shmavonyan G.Sh., Asatryan H.G., Khachatryan V.D., Shmavonyan Gay.Sh. Characterization of semiconductors by exciton spectroscopy, Abstracts of the 3rd International Conference HighMatTech, p. 412, October 3-7, 2011, Kyiv, UKRAINE.
33. Shmavonyan G.Sh., Zadoyan A.M., Asatryan H.G. Influence of separate confinement heterostructure layer on carrier distribution among non-identical multiple quantum wells and operation current, Proceedings of the 8th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 197-200, 2011 (July 1-3, 2011, Yerevan, ARMENIA).
34. Shmavonyan G.Sh., Khachatryan S.G., Khachatryan V.D. Nanowires for Health and Environmental applications, 2nd NanoImpactNet Conference: For a healthy environment in a future with nanotechnology, Abstract Book, p. 102, Lausanne, SWITZERLAND, March 9-12, 2010.
35. Shmavonyan G.Sh., Bareghamyan G.V., Khachatryan V., Tamrazyan A. Characterization and Nano-machining of Nanowires, Proceedings of the 15th International Workshop on the Physics of Semiconductor Devices (IWPSD), p. 997 - 999, 2009 (December 15-19, 2009, Delhi, INDIA, Paper ID # 184).
36. Shmavonyan G.Sh. Focused ion beam treatment of ZnO nanowires, Bulletin of the American Physical Society, Pittsburgh, Pennsylvania, 54 (1), p. 664, 2009 (APS Annual Meeting, March 16-20, 2009, USA).
37. Shmavonyan G.Sh. A method for determining refractive indices of epilayers of multilayer quantum structure, Bulletin of the American Physical Society, Pittsburgh, Pennsylvania, 54 (1), p. 934, 2009 (APS Annual Meeting, March, 16-20, 2009, USA).
38. Grigoryan G.B., Shmavonyan G.Sh., Pakhalov V.B., Avetisyan H.R. Method of calculation of light emission spectra of InGaAsP quantum well, Proceedings of the 8th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 34-37, 2009 (July 3-5, 2009, Tsakhcadzor, ARMENIA).
39. Shmavonyan G.Sh. Technical Devices on the Basis of Semiconductor Physics, International Scientific Conference “Innovational potential of fundamental sciences and problems of its realization”, 20th Anniversary of SPASS, St. Petersburg, RUSSIA, December 2-4, 2009.
40. Shmavonyan G.Sh. Determination of parameters of InxGa1-xAsyP1-y material, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, Part 1, p. 548-552, 2008 (Yerevan, ARMENIA, November 19-23, 2009).
41. Shmavonyan G.Sh. SEM investigations of the surface and cross-section features of ZnO nanowires under focused ion beam treatment, E-MRS Fall Meeting & Exhibit, Book of Abstracts, p. 182-183, September 15 - 19, 2008, Warsaw, POLAND.
42. Shmavonyan G.Sh., Zendehbad S.M. Treatment of ZnO nanowires on Si(111), 2nd International Congress on Nanoscience and Nanotechnology (ICNN2008), Paper O141, October 28-30, 2008, Tabriz, IRAN.
43. Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP superluminescent diodes, 2nd International Congress on Nanoscience and Nanotechnology (ICNN2008), Paper P460, October 28-30, 2008, Tabriz, IRAN.
44. Shmavonyan G.Sh. Automation of analysis of electronic microscope images, Bulletin of the American Physical Society, 53, Paper R1.00111, P. 67, 2008 (APS Annual Meeting, March 10-14, 2008, New Orleans, Louisiana, USA).
45. Shmavonyan G.Sh. Tunable InGaAsP/InP semiconductor lasers, Proc. Conference on Laser Physics, p. 47-50, 2008 (Ashtarak, ARMENIA, October 14-17, 2008).
46. Shmavonyan G.Sh. Growth and characterization of high quality nanowires for semiconductor lasers, Proc. Conference on Laser Physics, 2008 (Ashtarak, ARMENIA, October 14-17, 2008).
47. Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP semiconductor optical amplifiers for optical fiber communication, Proceedings of the 2nd International Conference on Advanced Materials and Systems (ICAMS), pp. 310-313, 2008 (October 23-24, 2008, Bucharest, ROMANIA).
48. Shmavonyan G.Sh., Zendehbad S.M. New effects in semiconductor optical amplifier, Proceedings of the 2nd International Conference on Advanced Materials and Systems (ICAMS), pp. 528-532, 2008 (October 23 - 24, 2008, Bucharest, ROMANIA).
49. Shmavonyan G.Sh. Extremely broadband semiconductor optical amplifiers, Bulletin of the American Physical Society, Vol. 52, p. 1049, 2007 (APS Annual Meeting, March 5-9, 2007, Denver, Colorado, USA).
50. Shmavonyan G. Sh. A.M. Zadoyan, O.A. Zadoyan, F.G. Nazaryan, Investigation of the quality of surfaces of epitaxially grown multilayer nanoheterostructures, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, Part 1, pp. 420-422, 2008 (Yerevan, ARMENIA, November 19-23, 2007).
51. Shmavonyan G. SEM and STM Investigations of Nanowires, Proceedings of the 6th International Conference on “Semiconductor Micro- & Nano-Electronics” (ICSMN), pp. 157-160, 2007 (September 18-20, 2007, Tsakhgadzor, ARMENIA).
52. Shmavonyan G. New phenomena in nanostructures, 6th International Conference on “Semiconductor Micro- & Nano-Electronics” (ICSMN), pp. 54-57, 2007 (September 18-20, 2007, Tsakhgadzor, ARMENIA).
53. Shmavonyan G., Grigoryan K., Aramyan G. Using quantum well engineering to extend bandwidth of semiconductor optical amplifiers, 3rd Conference on Laser Optics for Young Scientists (LOYS 2006), Paper WeS6-P02, Technical Digest, p. 90, 2006 (St. Petersburg, RUSSIA, June 26-29, 2006).
54. Shmavonyan G., Grigoryan K., Aramyan G. Exciton spectroscopy of semiconductors, Materials of the International students and young scientists Conference in theoretical and experimental physics HЕUREKA-2006, Paper B39, 2006 (Lviv, UKRAINE, May 15-17, 2006).
55. Shmavonyan G. Three novel effects in nanostructures, Materials of the International students and young scientists Conference in theoretical and experimental physics HЕUREKA-2006, Paper B54, 2006 (Lviv, UKRAINE, May 15-17, 2006).
56. Shmavonyan G.Sh. Semiconductor lasers in optical communication band with very broadband tunability, Bulletin of the American Physical Society, Vol. 51, p. 649, 2006 (APS Annual Meeting, Baltimore, MD, March 13-17, 2006, USA).
57. Shmavonyan G.Sh. Three novel effects in nanostructures, Bulletin of the American Physical Society, Vol. 51, p. 359, 2006 (APS Annual Meeting, Baltimore, MD, March 13-17, 2006, USA).
58. Shmavonyan G., Zadoyan O. Structural characterization of Si(113) surface, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, 2, 437-439, 2006 (Yerevan, ARMENIA, October 23 - 27, 2006).
59. Shmavonyan G.Sh. New effects in nanostructure, International Conference on Nanotechnology – Materials & Methods (CIT NANOTECHNOLOGY), Paper ICNT- 12, Coimbatore. INDIA, June 23-25, 2006.
60. Shmavonyan G.Sh. New phenomena in nanostructures, Conference on International Collaboration Opportunities for Science and Technology Development in Armenia (organized by the US Office of Naval Research Global (ONRG) and NFSAT), Yerevan, ARMENIA, January 24 - 25, 2006.
61. Tchelidze T., Chikoidze E., Shmavonyan G.Sh., Kereselidze T. Exciton Energies in the Stacks of ZnSe/CdSe Quantum Dots, 32nd International Symposium on Compound Semiconductors (ISCS-2005), Rust, GERMANY, September 18-22, 2005.
62. Shmavonyan G.Sh., Tchelidze T. Increasing the efficiency of Photoelectrochemical Conversion of Solar Energy, Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD-2005), Vol. 1, pp. 191-195, 2005 (New Delhi, INDIA, December 13-17, 2005).
63. Shmavonyan G.Sh. Extremely broadening bandwidth of superluminescent diodes by using quantum well engineering and observing three novel effects, Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD-2005), Vol. 1, pp. 187-190, 2005 (New Delhi, INDIA, December 13-17, 2005).
64. Shmavonyan G.Sh., Martirosyan N.W., Shmavonyan G.Sh. Efficient Lattice-Mismatched Heterojunction Photovoltaic Cells, Proceedings of the 5th International Conference on Semiconductor Micro- and Nanoelectronics, pp. 242-245, 2005 (Aghveran, ARMENIA, September 16-18, 2005).
65. Shmavonyan G.Sh. UHV STM and LEED Studies of the Nucleation and Growth of Ge Thin Films and Nanostructures on Si(113) Substrates, Proceedings of the 5th International Conference on Semiconductor Micro- and Nanoelectronics, pp. 58-61, 2005 (Aghveran, ARMENIA, September 16 - 18, 2005).
66. Shmavonyan G.Sh., Khachikyan L. Investigation of reconstruction and morphology of Ge/Si surfaces by UHV STM and LEED, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, Vol. 2, pp. 581-584, 2005 (Yerevan, ARMENIA, Sept. 16-18, 2005).
67. Shmavonyan G.Sh., Tchelidze T., Grigoryan G. Characterization of II-VI Semiconductor Surfaces for Photoelectrochemical Conversion of Solar Energy, 12th International Conference on II-VI Compounds, Paper Tue-P-01, p. 142, 2005 (Warsaw, POLAND, September 12-16, 2005).
68. Shmavonyan G.Sh., Chelidze T. Novel Bi-directional Guided Effect of Lasing Mode, 12th Canadian Semiconductor Conference, Paper TP.58, p. 130, 2005 (Ottawa, CANADA, August 16-19, 2005).
69. Shmavonyan G.Sh., Chelidze T. Novel Effect of Thickness of Separate Confinement Heterostructure Layer, 12th Canadian Semiconductor Conference, Paper TP.59, p. 131 (Ottawa, CANADA, August 16-19, 2005).
70. Shmavonyan G.Sh. Novel effect of thickness of separate confinement heterostructure layer, Bulletin of the American Physical Society, Vol. 50, Paper R1.021, 2005 (APS Annual Meeting, March 21-25, 2005, Los Angeles, USA).
71. Bumby C.W., Shields P.A., Nicholas R.J., Shmavonyan G., Haywood S.K. Enhanced performance of GaSb/GaAs TPV cells grown on off-axis (100) GaAs substrates using an offset p-n junction, 6th Conference on Thermophotovoltaic Generation of Electricity: 4th NREL Thermophotovoltaic Conference, Freiburg, GERMANY, Paper CP738, June 14-16, 2004.
72. Fan Q., Shmavonyan G.Sh., May L., Haywood S.K., Bumby C.W., Shields P.A., Nicholas R.J. Improved quantum efficiency in GaSb/GaAs heterojunction photovoltaic cells using an offset p-n junction, 19th European Photovoltaic Solar Energy Conference and Exhibition, Paper 1AV.2.24, Paris, FRANCE, June 7-11, 2004
73. Shmavonyan Sh. Bi-directional guided effect in a shallow-etched bending ridge waveguide, Institute of Physics’ Condensed Matter and Materials Physics Conference, Paper SOP.P.2, p. 105, 2004 (Coventry, UK, April 4-7, 2004).
74. Shmavonyan G.Sh. Polarization method of diagnosing semiconductor quantum structures, Institute of Physics’ Condensed Matter and Materials Conference, Paper SOP.P.1, p. 105, 2004 (Coventry, UK, April 4-7, 2004).
75. Shmavonyan G., Buniatyan V., Shmavonyan G., Martirosyan N. A New Model of Quasi-Two-Dimensional Surface Exciton, 6th International Conference on Excitonic Processes in Condensed Matter (EXCON'04), Paper P76, 2004 (Krakow, POLAND, July 6-9, 2004).
76. Shmavonyan G.Sh. Novel bi-directional guided effect of lasing mode, Bulletin of the American Physical Society, Vol. 49, Part 2, # 1, p. 388, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22 - 26, 2004).
77. Shmavonyan G.Sh. An optical switching effect in optical communication system using one semiconductor optical amplifier, Bulletin of the American Physical Society, Vol. 49, Part 1, # 1, p. 388, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22-26, 2004).
78. Shmavonyan G.Sh., Kumar D.N.T., Micro-processes on semiconductor surface and exploitation of novel semiconductor devices, Bulletin of the American Physical Society, Vol. 49, Part 1, #1, p. 895, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22 - 26, 2004).
79. Shmavonyan G.Sh., Buniatyan V.V., Martirosyan N.W., Shmavonyan Gay.Sh. Nanostructures in optical fiber communications, Collection of the articles of the Annual Scientific Conference of the State Engineer¬ing University of Armenia, Vol. 2, pp. 467-470, 2004 (Yerevan, ARMENIA, October 25-29, 2004).
80. Shmavonyan G.Sh., Buniatyan V.V., Martirosyan N.W., Shmavonyan Gay.Sh. Nanostructures in the solar cells, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, Vol. 2, 464-467 (2004) (Yerevan, ARMENIA, October 25-29, 2004).
81. Martirosyan N.W., Avagyan P.B., Shmavonyan G.Sh., Buniatyan V.V. The synthesis of lanthanum based semiconductor oxide materials, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, 2, 487-490 (2004) (Yerevan, ARMENIA, October 25-29, 2004).
82. Lin C.-F., Tsai C.-W., Su Y.-S., Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diode/semiconductor optical amplifiers with emission spectrum covering from 1250 nm to 1650 nm, Proceedings of the Conference on Optical Amplifiers and Their Applications (OAA), Taipei, TAIWAN, pp. 121-123, 2003.
83. Shmavonyan G.Sh. Polarization spectroscopy of reflectance, Proceedings of the 12th International Workshop on the Physics of Semiconductor Devices (IWPSD-2003), 1, 253-255 (2004), (Chennai, INDIA, December 16-20, 2003).
84. Tsai C.-W., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminsecent diodes/semi¬con¬ductor optical amplifiers in optical communication band, Proceedings of the 5th Pacific Rim Conference on Lasers and Electro-Optics, Vol. 1, Paper TU4B-(2)-4, p. 54, 2003 (Dec. 15-19, 2003, Taipei, TAIWAN).
85. Lin C.-F., Tsai C.-W., Chang Y.-C., Shmavonyan G.Sh., Su Y.-Sh. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band”, Photonics West 2003: Optical Devices for Fiber Communication IV Conference at SPIE’s Integrated Optoelectronic Devices, Paper 4989-17, p. 356 (San Jose, California, USA, January 27-28, 2003).
86. Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Peculiarities of emission characteristics from semiconductor optical amplifier with non-identical multiple quantum wells”, Photonics West 2003: Physics and Simulation of Optoelectronic Devices XI Conference at SPIE’s Integrated Optoelectronic Devices, Paper 4986-52 (San Jose, California, USA, January 27-28, 2003).
87. Shmavonyan G.Sh. Peculiarities of rotation of polarization angle of light reflected from semiconductor surface layers, Bulletin of the American Physical Society, Spring Supplemental, Vol. 48, # 1, p. 702, 2003 (APS Annual Meeting, March 3 - 7, 2003, Austin, Texas, USA).
88. Lin C.-F., Tsai C.-W., Su Y.-S., Shmavonyan G.Sh. Extremely broadband InGaAsP/InP super¬lumi-nes¬cent diode/semiconductor optical amplifiers with emission spectrum covering from 1250 nm to 1650 nm, Conference on Optical Amplifiers and Their Applications - Topical Meeting (OAA2003), Paper MD20, Otaru, JAPAN, July 6-9, 2003.
89. Tsai C.-W., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminescent diodes/se¬mi¬conductor optical amplifiers in optical communication band, 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO / Pacific Rim 2003, Paper TU4B-(2)-4, Taipei, Taiwan, December 15-19, 2003.
90. Tsai C.-W., Shmavonyan G.Sh., Lin C.-F. Extremely broadband InGaAsP/InP superluminescent diodes, Conference on Optics and Photonics (OPT’2002), Paper FD3-5, Taipei, TAIWAN, December 20, 2002.
91. Lin C.-F., Tsai C.-W., Chang Y.-C., Chen C.-H., Shmavonyan G.Sh., Su Y.-Sh., Semiconductor lasers/optical amplifiers in optical communication band with very broadband property, IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD’2002), Sydney, AUSTRALIA, Paper 1068, p. 329. December 11-13, 2002.
92. Shmavonyan G.Sh. Specialties of semiconductor surface quantum inverse layer, Bulletin of the American Phy¬sical Society, Vol. 47, # 1, p. 227, 2002 (APS Annual Meeting, March 18-22, 2002, Indianapolis, USA).
93. Shmavonyan G.Sh. Investigation of CdTe surface layers via reflection, electroreflection, photo¬lu-mi¬nes¬cen¬ce and photocurrent methods, Bulletin of the American Physical Society, Vol. 46, # 1, part 1, p. 455, 2001 (APS Annual Meeting, Seattle, Washington, USA, March 12 - 16, 2001).
94. Shmavonyan G.Sh. Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfaces, Abstracts of the 10th International Conference on II-VI Compounds, Bremen, GERMANY, Paper Th-P10, September 9-14, 2001.
95. Shmavonyan G.Sh. Thermophotovoltaic cells based on p-GaSb/n-GaAs diodes, Proceedings of the 3rd National Conference Semiconductor Microelectronics, pp. 156-159, 2001 (Sevan, ARMENIA, September 10-12, 2001).
96. Shmavonyan G.Sh., Zheng L., Haywood S.K., Mason N.J. Effect of hydrogen incorporation on the elec¬tri¬cal properties of MOVPE grown GaSb/GaAs junctions, Annual Conference of the British Association for Crystal Growth, p. 52 (Manchester, UK, September 17-19, 2000).
97. Shmavonyan G.Sh., Panosyan J.R. Optical spectroscopy of near surface layer in compound semiconductors A2B6, Proceedings of St. Petersburg Inter-university Scientific Conference, part V, p. 67-68, 2000 (St. Petersburg, RUSSIA, September 6-11, 2000).
98. Shmavonyan G.Sh. Investigation of surface states, two-dimensional surface subbands and quasi-two-dimensional surface excitons, 2nd International Conference Advances in Modern Natural Sciences, Kaluga, RUSSIA, KSPU press, p. 139, June 6-9, 2000.
99. Shmavonyan G.Sh. Investigation of semiconductor photoelectrodes at low temperatures in case of photoelectrochemical conversion of solar energy, 32nd Workshop on Low Temperature Physics, Kazan, RUSSIA, p. 99, October 3-6, 2000.
100. Shmavonyan G.Sh. Energetic crisis and application of alternative energy sources, 1st International Ecological Congress, St. Petersburg, RUSSIA, June 14-16, 2000.
101. Shmavonyan G.Sh. Investigation of optical and photoelectrical properties of semiconductor surface states by optical, polarization and exciton spectroscopy, National Conference on Physics of Matter INF Meeting 2000, Geneva, ITALY, p. 189, June 12-16, 2000.
102. Shmavonyan G.Sh. Optical and polarization spectroscopy of semiconductor thin films, 4th International Conference on thin film physics and applications, Shanghai, CHINA, p. 56, May 8-11, 2000.
103. Panosyan J.R., Kasamanyan Z.A., Mailian A.R., Shmavonyan G.Sh. Quantization of the rotation of po¬larized angle of light reflected from the semiconductor near-surface layer, 1st USSR Conference of Physics basic of solid-state electronics, Vol. 1, pp. 38 - 39, 1989 (St. Petersburg, RUSSIA, September 25-29, 1989).
104. Shmavonyan G.Sh., Panosyan J.R. A new principle of determining energetic spectra of surface states, USSR Conference Surface, p. 196, 1989 (Moscow, Chernogolovka, RUSSIA, July 6-9, 1989).
105. Shmavonyan G.Sh., Mailian A.R. Peculiarities of reflection and electroreflection spectra CdTe monocrystals, Proceedings of the 3rd Armenian Republican Post-graduate Students' Conference, Vol. 3, p. 104, 1989 (Yerevan, ARMENIA, March 15-17, 1989).
106. Panosyan J.R., Kasamanyan Z.A., Mailian A.R., Shmavonyan G.Sh. Size quantized hole subbands in the inverse layer CdTe at high temperatures, Proceedings of the 11th USSR Semiconductor Physics Conference, Vol. 2, pp. 119 - 120, 1988 (Kishnev, MOLDOVA, October 3-5, 1988).
107. Kasamanyan Z.A., Mailian A.R., Panosyan J.R., Shmavonyan G.Sh. Surface excitons in the reflection and electroreflection spectra of CdTe-electrolyte interface, 6th USSR school-seminar on physics of semiconductor surface, Chernomorka, UKRAINE, September 8-17, 1987.
108. Shmavonyan G.Sh. Investigation of surface exciton effects in semiconductors, 32th Republican student scientific Conference, Yerevan, ARMENIA, September, 1986.
109. Shmavonyan G.Sh. Surface excitons on CdTe-electrolyte interface, Proceedings of the 2nd Armenian Re¬pub¬lican Post-graduate Students' Conference, p. 42, 1987 (Yerevan, ARMENIA, November 24-29, 1986).

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1. Shmavonyan G.Sh., Kazaryan V.E. Nanotechnology in Oncology (Nano-oncology), Journal “Science World”, National Academies Press, Armenia, V. 1, # 1, p. 24-30, 2010.
2. Shmavonyan G.Sh., Kazaryan V.E. Nanotechnology in Medicine (Nano-medicine), Journal “Science World”, National Academies Press, Armenia, V. 1, # 2, p. 24-32, 2010.
3. Shmavonyan G.Sh. Wonderful nano-world, Journal “Science World”, National Academies Press, Armenia, V. 2, p. 52-63, 2009.
4. Shmavonyan G.Sh. From Microelectronics to Nanoelectronics, Journal “Science World”, National Academies Press, Armenia, # 1, pp. 53 - 60, 2007.
5. Shmavonyan G.Sh., Karapetyan L., Shmavonyan Gay., Yeghiazaryan N. Education and Recruit-ment of Gifted High-School Students in Armenia, NATO Security through Science Series E: Human and Societal Dynamics, IOS Press, Netherlands, Ed. P. Csermely, T. Korcsmaros, and L. Ledeman, Vol. 16, pp. 294 - 296, 2007, ISBN: 978-1-58603-721-5 (3rd NATO-UNESCO Advanced Research Workshop No. 982077 on Science Education: Talent Recruitment and Public Understanding, Balatonfured, HUNGARY, October 20-22, 2006).
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