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Ingvild Julie Thue Jensen (born 1979) is a Norwegian experimental physicist working mainly with photoemission spectroscopy on semiconductor nanostructures and battery materials. She is a senior researcher at SINTEF and an adjunct researcher at the University of Oslo in Norway.

Education and career

Jensen completed her master's degree from the Department of Physics, University of Oslo in 2005, and earned a doctorate (PhD) in physics in 2013 with a dissertation entitled Combined experimental and computational study of the meta-stable Mg-Ti-H system[1][2].

Jensen was in 2019 awarded the prestigious Young Research talent project from the Norwegian Research Council named "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices (GO2DEVICE)"[3]. In the GO2DEVICE project, fabrication of a high-electron-mobility transistor (HEMT) based on novel (M,Ga)2O3 thin film heterostructures will be pursued (M = Al, In). Leading up to this project she has specialized in using photoemission spectroscopy to study bandgap variations and band alignment in semiconducting materials. In addition to the GO2DEVICE project she is active in several research projects such as "A highly efficient and stable electrode for solar-driven water electrolysis, interrogated by advanced operando and in situ techniques" (Solopp) and the project "Centrifuge Nano Technology: Nano silicon anodes for Li-ion batteries" (CENATE).


  1. ^ Thue Jensen, Ingvild Julie (2013). Combined experimental and computational study of the meta-stable Mg-Ti-H system. University of Oslo. Retrieved 15 June 2021.
  2. ^ "PhD defense Ingvild Jensen". Events. University of Oslo, Department of Physics. Retrieved 15 June 2021.
  3. ^ "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices". RCN Project bank. The Research Council of Norway. Retrieved 16 June 2021.