Homojunction
A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials having non-equal band gaps but typically have different doping (semiconductor). In such a structure, the implementable diode characteristics can closely approach those of an idealized diode. Furthermore, the diode model parameters that define the diode current vs. voltage response can be tuned by adjusting the thicknesses and band gaps of the layers.
In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as silicon, this is called a pn junction. This doesn't have to be the case though, the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a heterojunction.
Bibliography
- Template:Harvard reference, ISBN 0-12-498050-3. A somewhat dated reference respect to applications, but always a good introduction to basic principles of heterojunction devices.