Tin telluride: Difference between revisions

| Verifiedfields = changed

| verifiedrevid = 414434905

| edition = 87 | location = Boca Raton, FL | publisher = CRC Press

| isbn = 978-0-8493-0594-8 | pages = 4–90}}</ref>

| OtherNames = Tin(II) telluride, Stannous telluride

|Section1={{Chembox Identifiers

| CASNo_Ref = {{cascite|correct|CAS}}

| CASNo = 12040-02-7

| PubChem = 6432000

| InChI = 1S/Sn.Te

| SMILES = [Sn]=[Te]

|Section2={{Chembox Properties

| Formula = SnTe

| MolarMass = 246.31 g/mol

| Appearance = gray [[cubic crystal system|cubic]] crystals

| Density = 6.445 g/cm³ <ref>Beattie, A. G., J. Appl. Phys., 40, 4818–4821, 1969.</ref>

| MeltingPtC = 790

| BoilingPt =

| Solubility =

| BandGap = 0.18 eV <ref name="test">O. Madelung, U. Rössler, M. Schulz;

SpringerMaterials; sm_lbs_978-3-540-31360-1_859 (Springer-Verlag GmbH, Heidelberg, 1998),

http://materials.springer.com/lb/docs/sm_lbs_978-3-540-31360-1_859;</ref>

| ElectronMobility = 500 cm²&thinsp;V^&minus;1&thinsp;s^&minus;1

| ThermalConductivity =

| RefractIndex =

|Section3={{Chembox Structure

| CrystalStruct = [[Halite]] (cubic), [[Pearson symbol|cF₈]]

| SpaceGroup = Fm<U style="text-decoration: overline">3</U>m, No. 225

| Coordination = Octahedral (Sn²⁺)<br/>Octahedral (Se²⁻)

| LattConst_a = 0.63 nm

|Section4={{Chembox Thermochemistry

| DeltaHf =

| Entropy =

| HeatCapacity = 185 J&thinsp;K^&minus;1&thinsp;kg^&minus;1

|Section7={{Chembox Hazards

| ExternalSDS =

| HPhrases =

| PPhrases =

| GHS_ref =

| NFPA-H =

| NFPA-F =

| NFPA-R =

| FlashPt =

|Section8={{Chembox Related

| OtherAnions = [[Tin(II) oxide]]<br/>[[Tin(II) sulfide]]<br/>[[Tin selenide]]

| OtherCations = [[Carbon monotelluride]]<br/>[[Silicon monotelluride]]<br/>[[Germanium telluride]]<br/>[[Lead telluride]]

| OtherCompounds =

}}

'''Tin telluride''' is a compound of [[Tin (element)|tin]] and [[tellurium]] (SnTe); is a IV-VI [[Narrow-gap semiconductor|narrow band gap semiconductor]] and has direct [[band gap]] of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an [[infrared detector]] material.

Tin telluride normally forms p-type semiconductor ([[Extrinsic semiconductor]]) due to tin vacancies and is a low temperature

superconductor.<ref>{{Cite journal | last1 = Hein | first1 = R. | last2 = Meijer | first2 = P. | doi = 10.1103/PhysRev.179.497 | title = Critical Magnetic Fields of Superconducting SnTe | journal = Physical Review | volume = 179 | issue = 2 | pages = 497 | year = 1969 |bibcode = 1969PhRv..179..497H }}</ref>

SnTe exists in three crystal phases. At Low temperatures, where the concentration of hole carriers is less than 1.5x10²⁰ cm⁻³ , Tin Telluride exists in rhombohedral phase also known as α-SnTe.

At room temperature and atmospheric pressure, Tin Telluride exists in NaCl-like cubic crystal phase, known as β-SnTe.

While at 18 kbar pressure, β-SnTe transforms to γ-SnTe, [[Orthorhombic crystal system|orthorhombic phase]], [[space group]] Pnma.<ref>{{cite book|doi=10.1007/10681727_862|chapter=Tin telluride (Sn ''Te'') crystal structure, lattice parameters|title=Non-Tetrahedrally Bonded Elements and Binary Compounds I|volume=41C|pages=1–8|series=Landolt-Börnstein - Group III Condensed Matter|year=1998|isbn=978-3-540-64583-2}}</ref> This phase change is characterized by 11 percent increase in density and 360 percent increase in resistance for γ-SnTe.<ref>Kafalas, J. A.; Mariano, A. N., High-Pressure Phase Transition in Tin Telluride. Science 1964, 143 (3609), 952-952</ref>

Tin telluride is a thermoelectric material. Theoretical studies

imply that the n-type performance may be particularly good.<ref>{{Cite journal | last1 = Singh | first1 = D. J. | title = THERMOPOWER OF SnTe FROM BOLTZMANN TRANSPORT CALCULATIONS | doi = 10.1142/S1793604710001299 | journal = Functional Materials Letters | volume = 03 | issue = 4 | pages = 223–226 | year = 2010 | arxiv = 1006.4151 | s2cid = 119223416 }}</ref>

==Thermal properties==

* [[Standard enthalpy of formation]]: - 14.6 ± 0.3 kcal/mole at 298 K

* Standard [[Enthalpy of sublimation]]: 52.1 ± 1.4 kcal/mole at 298 K

* [[Heat capacity]]: 12.1 + 2.1 x 10⁻³ T cal/deg

* [[Bond-dissociation energy]] for the reaction SnTe(g)-> Sn(g)+ Te(g) : 80.6 ± 1.5 kcal/mole at 298 K

* [[Entropy]]: 24.2±0.1 cal/mole.deg

* Enthalpy of Dimerization for the reaction Sn₂Te₂->2SnTe(g) :46.9 ± 6.0 kcal/mole <ref>Colin, R.; Drowart, J., Thermodynamic study of tin selenide and tin telluride using a mass spectrometer. Transactions of the Faraday Society 1964, 60 (0), 673-683, DOI: 10.1039/TF9646000673.</ref>

==Applications==

Generally [[Lead|Pb]] is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of [[Quantum confinement]], the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR [[photodetector]]s <ref>Lovett, D. R. Semimetals and narrow-bandgap semiconductors; Pion Limited: London, 1977; Chapter 7.</ref> and [[thermoelectric generator]].<ref>Das, V. D.; Bahulayan, C., Variation of electrical transport properties and thermoelectric figure of merit with thickness in 1% excess Te-doped Pb 0.2 Sn 0.8 Te thin films. Semiconductor Science and Technology 1995, 10 (12), 1638.</ref>

{{More citations needed|date=May 2009}}

* [http://lb.chemie.uni-hamburg.de/static/MF/2_Sn_Sn1.php?content=591/MW4ckRAlY Landolt-Börnstein Substance/SnTe index]

* [https://dx.doi.org/10.1103/PhysRev.162.692 Reflectivity of Tin Telluride in the Infrared]

{{Tellurides}}

[[Category:Tin(II) compounds]]

[[Category:IV-VI semiconductors]]

[[Category:Rock salt crystal structure]]