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The cavity magnetron is a high-power vacuum tube used in early radar systems and subsequently in microwave ovens and in linear particle accelerators....52 KB (6,431 words) - 02:18, 15 May 2024
Sputter deposition (redirect from Magnetron sputtering)the pulsed laser deposition process. Sputtering sources often employ magnetrons that utilize strong electric and magnetic fields to confine charged plasma...22 KB (2,801 words) - 07:14, 19 May 2024
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two...49 KB (5,968 words) - 03:19, 12 May 2024
Nixie tube (redirect from Magnetron beam-switching tube)counter tube; another name was "magnetron beam-switching tube", referring to their derivation from a split-anode magnetron. Trochotrons were used in the...22 KB (2,616 words) - 18:41, 28 March 2024- High-power impulse magnetron sputtering (HIPIMS or HiPIMS, also known as high-power pulsed magnetron sputtering, HPPMS) is a method for physical vapor...23 KB (2,613 words) - 12:48, 16 May 2024
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum...25 KB (3,146 words) - 11:47, 20 April 2024
MOSFET (redirect from Metal oxide semiconductor field-effect transistor)The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated...93 KB (11,343 words) - 20:32, 16 May 2024
Microwave oven (section Cavity magnetron)and other companies for the mass production of the cavity magnetron. In 1945, the heating effect of a high-power microwave beam was accidentally discovered...87 KB (10,314 words) - 15:07, 16 May 2024
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the...22 KB (2,361 words) - 03:37, 3 April 2024
Gunn diode (redirect from Gunn effect)resistance, used in high-frequency electronics. It is based on the "Gunn effect" discovered in 1962 by physicist J. B. Gunn. Its main uses are in electronic...13 KB (1,747 words) - 10:45, 26 April 2024
ISFET (redirect from Ion sensitive field effect transistor)An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration...21 KB (2,278 words) - 09:04, 20 October 2023
High-entropy alloy (section High entropy effect)HEAFs such as spraying, laser cladding, electrodeposition, and magnetron sputtering. Magnetron Sputtering technique is the most-used method to fabricate the...101 KB (12,319 words) - 06:05, 19 May 2024
Multigate device (redirect from Multigate field effect transistor)multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than...40 KB (4,201 words) - 18:41, 1 March 2024
Hexode Pentagrid (Heptode) Octode Traveling-wave tube Klystron Oscillation Magnetron Reflex klystron (obsolete) Carcinotron Optical detectors or emitters Phototube...25 KB (2,703 words) - 08:44, 6 May 2024
influence of controlling electric or magnetic fields, and include the magnetron (used in microwave ovens), klystron, traveling-wave tube (TWT), and gyrotron...67 KB (6,963 words) - 17:17, 16 May 2024
Philipp Lenard (redirect from Lenard effect)weiterem (or: Elektrizitätslehre 2. Teil). Later editions, 1943 Cavity magnetron Fluid thread breakup "Lénárd Fülöp (1862–1947)". Sulinet (in Hungarian)...23 KB (2,409 words) - 07:55, 6 April 2024
JFET (redirect from Junction Field-Effect Transistor)The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that...20 KB (2,415 words) - 16:11, 31 March 2024
Transistor (section Field effect transistors)inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor (FET) in 1926, but it was not possible to construct a working...95 KB (9,876 words) - 02:40, 24 April 2024
Tunnel magnetoresistance (redirect from Magnetic tunnel effect)film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed...26 KB (3,271 words) - 01:38, 2 January 2024
Albert W. Hull (section Magnetron)made contributions to the development of vacuum tubes, and invented the magnetron. He was a member of the National Academy of Sciences. He was born on 19...8 KB (847 words) - 18:00, 16 May 2024
- their efforts. When the British revealed the principle of the multicavity magnetron developed by J. T. Randall and H. A. H. Boot at the University of Birmingham
- devices like toasters and vacuum sweepers may become unnecessary; gigantic magnetrons and klystrons, or their successors, will generate megawatts in microwaves;
- This device is related to but not the same as a magnetron. The klystron was invented after the magnetron. Klystrons work using a principle known as velocity