C. Frank Wheatley Jr.

C. Frank Wheatley Jr. (1927, Baltimore, Maryland – October 18, 2014) was an electrical engineer responsible for a number of innovations within the semiconductor industry, including the patent of the insulated-gate bipolar transistor (IGBT).^[1]^[2] His work within the semiconductor industry garnered him a variety of awards, including his induction into the New Jersey Inventors Hall of Fame^[3] and election as an IEEE Fellow.^[4]

Awards

The University of Maryland inducted Wheatley into the Hall of Fame of the A. James Clark School of Engineering.^[2] He has also received three awards from RCA, four from Harris Corporation, and five from the IEEE.^[5]

His most cited publications, according to Google Scholar, are:^[6]

CTitus JL, Wheatley CF. Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs. IEEE Transactions on Nuclear Science. 1996 Apr;43(2):533-45. (cited 154 times)
Brews JR, Allenspach M, Schrimpf RD, Galloway KF, Titus JL, Wheatley CF. A conceptual model of a single-event gate-rupture in power MOSFETs. IEEE transactions on nuclear science. 1993 Dec;40(6):1959-66. (cited 89 times)

^ "RCA Transistor Oral History Wheatley Index". semiconductormuseum.com. Retrieved 2020-01-15.
^ ^a ^b "C. Frank Wheatley, Jr. | A. James Clark School of Engineering, University of Maryland". eng.umd.edu. Retrieved 2020-01-15.
^ "2013 Awardees". NJ Inventors Hall of Fame 2018. Retrieved 2020-01-15.
^ Titus JL, Wheatley CF, Gillberg JE, Burton DI. A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems]. IEEE Transactions on Nuclear Science. 2001 Dec;48(6):1879-84.
^ "In Memoriam". IEEE Transactions on Nuclear Science. 61 (6): 2817. December 2014. Bibcode:2014ITNS...61.2817.. doi:10.1109/TNS.2014.2372823. ISSN 1558-1578.
^ "CFWheatley". WorldCat. Retrieved February 4, 2020.

This article about an American electrical engineer is a stub. You can help Wikipedia by expanding it.