Short-channel effect

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In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion-layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, and hot carrier degradation.[1][2]

References[edit]

  1. ^ F. D’Agostino, D. Quercia. "Short-Channel Effects in MOSFETs" (PDF).
  2. ^ Principles of Semiconductor Devices. 7.7. Advanced MOSFET issues

See also[edit]