Talk:Floating-gate MOSFET

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Comment[edit]

I'd like more info on the structure of this device. Is terminal B grounded? Does this MOSFET have a body diode? The author says the gate is isolated, but the gate is isolated in a conventional MOSFET also. It looks like the substrate is isolated here.

Physics please[edit]

I know some physics but not much circuit design. I am surprised that semiconductor fabrication can build micron sized elements that hold a charge on timescales spanning fabrication to deployment. Articles on semiconductor circuits, such as this, need general links to articles on the materials and physics behind these possibilities. Also numbers would also help understand the differences in timescales that a circuit element can hold a charge—milliseconds for DRAM, weeks for floating gate MOSFETs.

Perhaps this information in already at this site. I have not found it. Links would help. The article on insulators (Insulator_(electricity)) is good and shares the needed physics, but not the numbers to understand the duration of the charge on a FGMOSFET. A quick scan of the general article on semiconductors did not reveal this information.

What's here is good.

NormHardy (talk) 00:21, 3 December 2012 (UTC)[reply]

"Electrically isolated" very vague term[edit]

The first sentence is currently written as:

"... where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it."

I propose replacing "electrically isolated" with "normally galvanically isolated" instead, hyperlinked to galvanic isolation, because "electrically isolated" is a very vague term...they aren't really "electrically isolated" since AC "electricity" still goes between them via capacitive coupling, just not actual electric charges. And adding "normally" because there is still some charge transfer when doing the hot carrier injection. But I just want to be sure I'd be correct in using that term "galvanically" instead of "electrically" here and because I'm not familiar with this technology. And I would break the long first sentence into two and put first "floating" in italics so understand that is a term. So it becomes:

"... where the gate is normally galvanically isolated (a floating node for direct current). That floating gate (FG) is controlled by a number of secondary gates or inputs deposited above it." Em3rgent0rdr (talk) 17:28, 21 October 2023 (UTC)[reply]