Suzhou Oriental Semiconductor

Suzhou Oriental Semiconductor Co., Ltd (Chinese: 苏州东微半导体有限公司), abbreviated as Oriental Semiconductor (Chinese: 东微半导体), was founded in 2008, located in SIP, Suzhou, China.^[1] It invented the world's first semi-floating gate transistor (SFGT) with Fudan University in Shanghai.^[2] The related research paper was published on Science on August 9, 2013.^[3]

References[edit]

^ 吴秋华 (2009-07-25). 创意到创业“天使”来搭桥. 苏州日报 (in Chinese). Retrieved 2013-08-13.
^ Bob, Yirka (9 August 2013). "Researchers speed up transistors by embedding tunneling field-effect transistor". Phys.org. Retrieved 13 August 2013.
^ Wang, P.-F.; Lin, X.; Liu, L.; Sun, Q.-Q.; Zhou, P.; Liu, X.-Y.; Liu, W.; Gong, Y.; Zhang, D. W. (2013). "A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation". Science. 341 (6146): 640–3. Bibcode:2013Sci...341..640W. doi:10.1126/science.1240961. PMID 23929978. S2CID 206550093.

External links[edit]

Official website

This Suzhou-related article is a stub. You can help Wikipedia by expanding it.

[1] 吴秋华 (2009-07-25). 创意到创业“天使”来搭桥. 苏州日报 (in Chinese). Retrieved 2013-08-13.

[2] Bob, Yirka (9 August 2013). "Researchers speed up transistors by embedding tunneling field-effect transistor". Phys.org. Retrieved 13 August 2013.

[3] Wang, P.-F.; Lin, X.; Liu, L.; Sun, Q.-Q.; Zhou, P.; Liu, X.-Y.; Liu, W.; Gong, Y.; Zhang, D. W. (2013). "A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation". Science. 341 (6146): 640–3. Bibcode:2013Sci...341..640W. doi:10.1126/science.1240961. PMID 23929978. S2CID 206550093.

[1]

[2]

[3]

See also[edit]

References[edit]

External links[edit]