Talk:Non-volatile random-access memory

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Talk[edit]

this article doesn't mention the NVRAM chips that are RAM chips with an incorporated battery 194.65.255.174 22:45, 24 August 2005 (UTC)

Alison Chaiken 16:30, 19 September 2005 (UTC): There are lots of things the article doesn't mention: it needs a lot more work! However, most people don't consider battery-backed RAM to be non-volatile. "Non-volatile" implies data persistence in the absence of power for extended periods of time.

  • Disagree with proposed merge to Non-volatile memory; many non volatile memories are not NVRAM -- hard drives and other magnetic media, for example. FT2 (Talk | email) 00:28, 16 April 2007 (UTC)
  • Agreed. They are a separate subject. —Preceding unsigned comment added by 24.6.207.55 (talkcontribs) 2 May, 2007
  • Also, the article is a bit to long and detailed for a merge. --203.30.68.49 (talk) 01:42, 26 November 2007 (UTC)
You had no right to do so. Merge template restored so that the discussion can be found. 109.145.22.224 (talk) 13:27, 25 April 2012 (UTC)
  • I would like to see a page or so related to the physics of EEPROM - existing EEPROM article does not cover that, whereas NVRAM article does. How about separate articles for 'physics of non-volatile memory' (new), then existing EEPROM and NVRAM articles which could be more product-related. I am willing to contribute to the first article. Keble6 (talk) 19:53, 5 December 2007 (UTC)

You have put your comments on the merger in the wrong place, so it is not suprising that the proposer has not seen them. The discussion was in the correct location which is the target article talk page. I have taken the liberty of copying the above comments over to that talk page. In view of the above objections, I feel that it is right at this point to revert the merge until a full discussion on all the points raised has taken place. 109.145.22.224 (talk) 13:27, 25 April 2012 (UTC)

Notice the time stamps on the comments. --Wtshymanski (talk) 14:18, 26 April 2012 (UTC)

Toshiba's new developments - New NV-RAM[edit]

I'm unfamiliar with Wikipedia's article policies, so I'll let someone else add this piece in. Toshiba has recently developed Highest density and highest bandwidth NV-RAM. Would really appreciate it if I saw this in the article. —Preceding unsigned comment added by 70.115.74.82 (talk) 08:47, 9 February 2009 (UTC)

If you have the appropriate references to support such an addition to the article then be WP:BOLD and add it yourself. 109.145.22.224 (talk) 13:37, 25 April 2012 (UTC)

Potential usage of NVRAM[edit]

I would like to see some additional content related to the speculative impact of NVRAM on existing systems architectures. While the description of NVRAM in terms of what it is is useful, what NVRAM could be is also useful.89.176.34.187 (talk) 23:37, 21 February 2014 (UTC)

Providing "speculative" or "potential" uses is not the domain of an encyclopedia. That is more suitable for marketing and engineering.
However, it would be valuable to add the ways in which products have changed since they have included NVRAM in their designs. Popular Science might be a good source for some of this, though lot of their content is the speculative. There are allegedly 28 issues which forecast flying automobiles for common use. —EncMstr (talk) 20:33, 22 February 2014 (UTC)


Speaking of "speculative" or "potential" uses, this entire article is just that. Somebody needs to explain precisely how they justify the current-day usage of "flash" memory as genuine RAM function. That is, if technical words should have technical meaning on Wikipedia.Wikibearwithme (talk) 04:27, 27 March 2016 (UTC)

Intel / Micron's new developments - XPoint Press Release[edit]

"SANTA CLARA, Calif., and BOISE, Idaho, July 28, 2015 – Intel Corporation and Micron Technology, Inc. today unveiled 3D XPoint™ technology, a non-volatile memory ...3D XPoint technology combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today. The technology is up to 1,000 times faster and has up to 1,000 times greater endurance3 than NAND, and is 10 times denser than conventional memory.

...The innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to faster and more efficient read/write processes."

[1] Jim.Callahan,Orlando (talk) 16:38, 6 September 2015 (UTC)

External links modified[edit]

Hello fellow Wikipedians,

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Question? Archived sources still need to be checked

Cheers. —cyberbot IITalk to my owner:Online 00:10, 17 October 2015 (UTC)


accuracy section[edit]

This is a big subject to attempt covering accurately, in large part due to the amount of grandstanding partaken in by various aspiring vendors. However, as a humble beginning on due diligence, I am not sure it is accurate to refer to flash-assisted RAM as NVRAM, since the NV part can only participate in a very peripheral manner (e.g. RAM SSD).

In spirit of avoiding equivocation in an area of high equivocation, I think it only serves to confuse the issues by calling these flash-assisted devices "NVRAM," as this suggests the solid state drive portion is performing the conventional duty required by normal RAM, which it is completely incapable of doing.4.35.70.203 (talk) 06:01, 4 December 2015 (UTC)Wikibearwithme (talk) 06:02, 4 December 2015 (UTC)

  1. ^ http://newsroom.intel.com/community/intel_newsroom/blog/2015/07/28/intel-and-micron-produce-breakthrough-memory-technology