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User:Hourahine/Materials science conferences

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List of active materials science conferences The multidisciplinary area of Materials science has a number of long running and active academic and industrial conferences.

Alphabetic list of general materials conferences

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Conferences on specific materials

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Conferences on preparation of materials

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  • International Symposium on Growth of III nitrides (ISGN)[2]

Defect conferences

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Meetings that have a focus on defects in materials and solids include:

Conference Acronym First started Focus Notes
European Conference on Defects in insulating materials EDIMS Runs every 4 years[3]
Extended Defects in Semiconductors conference EDS ? line, area and interface defects Runs in even number years[4]
Gettering and Defect Engineering in Semiconductor Technology GADEST Runs in odd years[5]
Gordon Research Conferences defect meeting[6] 1977[7] Defects in semiconducting materials Runs in even number years
International Conference on Defects in Semiconductors ICDS 1951[8] Defects in semiconducting materials Runs in odd number years
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors DRIP ? line, area and interface defects Runs in even number years[9]
International Conference on Radiation Effects in Insulators REI 1981[10] Runs in odd number years

References

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  1. ^ http://www.mrs-mexico.org.mx/
  2. ^ https://www.unipress.waw.pl/isgn-7/
  3. ^ http://eurodim2018.pl/
  4. ^ http://www.sinaxis.gr/EDS2018/
  5. ^ https://www.gadest2019.org/
  6. ^ https://www.grc.org/defects-in-semiconductors-conference/
  7. ^ https://www.grc.org/defects-in-semiconductors-conference/
  8. ^ Jantsch, Wolfgang (October 1993). "Preface". Materials Science Forum. 143–147: 100–105. Bibcode:1998MSF...278..100W. doi:10.4028/www.scientific.net/MSF.278-281.100. Retrieved 25 July 2019.
  9. ^ https://drip18.fbh-berlin.de
  10. ^ Mazzoldi, P (2010). "The long history of REI Conference: The first 30 years". Nucl. Instrum. Methods Phys. Res. B. 268 (19): 3248–3256. doi:10.1016/j.nimb.2010.05.102.