Jump to content

Vadim Lashkaryov

From Wikipedia, the free encyclopedia

This is an old revision of this page, as edited by BattyBot (talk | contribs) at 04:53, 7 January 2016 (General fixes, removed orphan tag using AWB (11769)). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

Vadim Evgenievich Lashkaryov (October 7, 1903 - December 1, 1974), a prominent Soviet experimental physicist, was born in Kyiv, currently the capital of Ukraine, to a family of a lawyer. He was an Academician of the National Academy of Sciences of Ukraine and is known for his fundamental contributions to physics of semiconductors.

Career

Lashkaryov graduated from the Kyiv Institute for People Education (as the Kyiv University was termed at that time) in 1924. He started his research work on the diffraction of X-rays in the Kyiv Polytechnic Institute and continued it in the newly established Institute of Physics of the Ukrainian Academy of Sciences. In 1930 he moved to Physical-Technical Institute in Leningrad (currently Ioffe Institute in St.Petersburg) where he performed first in the Soviet Union experiments on electron diffraction. After a forced stay in Archangelsk where he taught physics in the local Medical Institute, Lashkaryov returned to Kyiv in 1939 where he switched to physics of semiconductors.

In 1941 Lashkaryouv published his fundamental discovery, the presence of a semiconductor layer between the barrier layer and the adjacent electrode, and the opposite sigh of charge carriers (electrons and holes) on both sides of a barrier layer in solar cells of CuO and silver sulphide photocells and selenium rectifiers.[1] In current term this was a discovery of p-n-junctions around the rectifying layers in these systems. It discovery was made by measuring the sign change of thermo-e.m.f. on both sides of the rectifying layer by using miniature thermoprobes. During WWII Lashkaryov worked in the city of Ufa on cuprous oxide devices for defense needs. After WWII, back in Kyiv, Lashkaryov investigated bipolar diffusion of photo-carriers in cuprous oxide, photoconductivity of CdS and CdSe, and also on Ge diods and transistors.

In 1960 Lashkaryov founded in Kyiv the Institute of Semiconductors of the Ukrainian Academy of Sciences that currently carries his name. He also established a Chair in semiconductor physics in the Taras Shevchenko National University of Kyiv.

See also

References

  1. ^ V. E. Lashkaryov, Investigation of a barrier layer by the thermoprobe method, Izv. Akad. Nauk SSSR, Ser. Fiz. 5, 442-446 (1941), English translation: Ukr. J. Phys. 53, 53-56 (2008),http://ujp.bitp.kiev.ua/files/journals/53/si/53SI11p.pdf
  • Page of the V. Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, http://isp.kiev.ua/
  • N. N. Bogolyubov, B. M. Vul, S. G. Kalashnikov, S. I. Pekar, É. I. Rashba, O. V. Snitko, K. B. Tolpygo and M. K. Sheinkman, Vadim Evgen'evich Lashkarev (obituary), Sov. Phys. Usp. 18, 842 (1975) doi:10.1070/PU1975v018n10ABEH005232, http://iopscience.iop.org/0038-5670/18/10/M07/
Retrieved from "https://en.wikipedia.org/w/index.php?title=Vadim_Lashkaryov&oldid=698610314"