Talk:Ohmic contact: Difference between revisions

Browse history interactively

← Previous edit Next edit →

Content deleted Content added

VisualWikitext

Inline

Revision as of 15:44, 26 February 2009

‹See TfM›

Physics C‑class High‑importance

	Physics portal This article is within the scope of WikiProject Physics, a collaborative effort to improve the coverage of Physics on Wikipedia. If you would like to participate, please visit the project page, where you can join the discussion and see a list of open tasks.PhysicsWikipedia:WikiProject PhysicsTemplate:WikiProject Physicsphysics articles
C	This article has been rated as C-class on Wikipedia's content assessment scale.
High	This article has been rated as High-importance on the project's importance scale.

What this article still needs: some simple band diagrams illustrating the various energies; a table listing important metal-semiconductor contact combinations; a discussion of contact formation by implantation and annealing; a few words about barrier layers and electromigration. Alison Chaiken 00:57, 17 January 2006 (UTC)[reply]

Are the band diagrams for the ohmic contacts correct? I was under the impression that they should be reversed. In both cases, it appears that the majority carriers would have a difficult time moving from the semiconductor to the metal under zero (or negative) bias

Also, The Seebeck effect is not caused by ohmic or blocking contact. Rather, it is the flow of carriers due to a temperature gradient. This effect can happen in, say, a semiconductor by itself without any metal contact!

band-bending

"The built-in field is the cause of band-bending in the semiconductor near the junction. "

But what is the reason of this? LMB 15:50, 18 September 2007 (UTC)[reply]

semiconductor depletion region?

Umm... wouldn't a depletion region make it a Schottky barrier instead? Tunneling through a depletion region is called punch through, and it's a diode breakdown mechanism (see zener diode), but that contradicts the article's definition of an ohmic contact has having linear I-V.

Also Streetman says

Unlike the rectifying contacts discussed previously, no depletion region occurs in the semiconductor in these cases sinc ethe electrostatic potential difference required to align the Fermi levels at equilibrium calls for accumulation of the majority carriers in the semiconductor.

So I was just coming here to look for an equation to find the width of the accumulation region and there's this about depletion... this isn't my specialty but unless someone wants to defend this I think much of the main section will get ripped out.

I don't see how the penetration of the effects of the metal would depend on preexisting carrier density here. Potatoswatter 23:03, 7 November 2007 (UTC)[reply]

there is anorther contact called the rectifying contact...

Revision as of 15:55, 12 July 2008 edit Headbomb (talk \| contribs) Edit filter managers, Autopatrolled, Extended confirmed users, Page movers, File movers, New page reviewers, Pending changes reviewers, Rollbackers, Template editors 450,815 edits assess ← Previous edit		Revision as of 15:44, 26 February 2009 edit undo 117.194.67.5 (talk) →semiconductor depletion region? Next edit →
Line 23:		Line 23:

	I don't see how the penetration of the effects of the metal would depend on preexisting carrier density here. [[User:Potatoswatter\|Potatoswatter]] 23:03, 7 November 2007 (UTC)		I don't see how the penetration of the effects of the metal would depend on preexisting carrier density here. [[User:Potatoswatter\|Potatoswatter]] 23:03, 7 November 2007 (UTC)

			there is anorther contact called the rectifying contact...