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Reduced-latency Dynamic random access memory (RLDRAM) is a type of random access memory developed by Infineon Technologies AG in 1999. Infineon and Micron Technology, Inc. later agreed to jointly develop the device to guarantee a second source. RLDRAM memory is a low-latency, high-bandwidth DRAM designed for networking and L3 cache, high-end commercial graphics, and other applications that require back-to-back READ/WRITE operations or completely random access.[1]


RLDRAM 3[edit]

In 2012, Micron Technology and Xilinx demonstrated a prototype board with Virtex-7 and Kintex-7 FPGAs interfacing RLDRAM 3 memory.[2]