Indium antimonide: Difference between revisions
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| Formula = InSb |
| Formula = InSb |
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| MolarMass = 236.578 g/mol |
| MolarMass = 236.578 g/mol |
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| Density = |
| Density = 5.77 g/cm<sup>3</sup> |
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| Solubility = insoluble |
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| Appearance = dark grey silvery metal pieces |
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| Solvent = other solvents |
| Solvent = other solvents |
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| SolubleOther = |
| SolubleOther = |
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| MeltingPt = 527 °C<ref>[http://www.ioffe |
| MeltingPt = 527 °C<ref name=ioffe>[http://www.ioffe.ru/SVA/NSM/Semicond/InSb/index.html Properties of Indium Antimonide (InSb)]</ref> |
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| BoilingPt = }} |
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| Section3 = {{Chembox Structure |
| Section3 = {{Chembox Structure |
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'''Indium antimonide''' |
'''Indium antimonide''' is a crystalline [[Chemical compound|compound]] made from the [[Chemical element|element]]s [[indium]] and [[antimony]]. It is a [[narrow gap]] [[semiconductor material]] from the [[Boron group|III]]-[[Nitrogen Group|V]] group used in [[infrared detector]]s, including [[thermal imaging]] cameras, [[FLIR]] systems, [[infrared homing]] [[missile guidance]] systems, and in [[infrared astronomy]]. The indium antimonide detectors are sensitive between 1-5 µm wavelengths. |
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Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as [[terahertz]] radiation source as it is a strong [[Photo-dember]] emitter. |
Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as [[terahertz]] radiation source as it is a strong [[Photo-dember]] emitter. |
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⚫ | InSb crystals have been grown by slow cooling from liquid melt at least since 1954 <ref>D. G. Avery, D. W. Goodwin, W. D. Lawson and T. S. Moss "Optical and Photo-Electrical Properties of Indium Antimonide" [http://www.iop.org/EJ/abstract/0370-1301/67/10/304 Proc. Phys. Soc. B 67 761-767 (1954)] {{doi|10.1088/0370-1301/67/10/304}}</ref>. |
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==Physical properties== |
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⚫ | Indium antimonide [[photodiode]] detectors are [[photovoltaic]], generating electric current when subjected to infrared radiation. InSb has high [[quantum efficiency]] (80-90%). Its drawback is a high instability over time; the detector characteristics tend to drift over time, and between cooldowns, requiring periodic recalibrations, increasing the complexity of the imaging system. Due to their instability, InSb detectors are rarely used in [[metrology]] applications. This added complexity is worthwhile where extreme sensitivity is required, e.g. in long-range military thermal imaging systems. |
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⚫ | A layer of indium antimonide sandwiched between layers of [[aluminium indium antimonide]] can act as a [[quantum well]]. This approach is studied in order to construct very fast [[transistor]]s. [http://www.newscientist.com/article.ns?id=dn6997] [[Bipolar transistor]]s operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s. [[Field effect transistors]] operating at over 200 GHz have been reported more recently ([[Intel]]/[[QinetiQ]]). Some models suggest [[terahertz]] frequencies are achievable with this material. Indium antimonide semiconductors are also capable of operating with voltages under 0.5 V, reducing their power requirements. |
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⚫ | The undoped semiconductor possesses the largest ambient temperature [[electron mobility]] (78000 cm<sup>2</sup>/(V*s) <ref>D. L. Rode "Electron Transport in InSb, InAs, and InP" [http://prola.aps.org/abstract/PRB/v3/i10/p3287_1 Phys. Rev. B3, 10 (1971) 3287]</ref>, [[electron velocity]], and [[Ballistic transport|ballistic length]] (up to 0.7 μm at 300 K) <ref name=ioffe/> of any known semiconductor except possibly for [[carbon nanotubes]]. |
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InSb crystals have been grown by slow cooling from liquid melt at least since 1954. |
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⚫ | Indium antimonide [[photodiode]] detectors are [[photovoltaic]], generating electric current when subjected to infrared radiation. InSb has high [[quantum efficiency]] (80-90%) <ref>D. G. Avery, D. W. Goodwin, and Miss A. E. Rennie "New infra-red detectors using indium antimonide" [http://www.iop.org/EJ/abstract/0950-7671/34/10/305 Journal of Scientific Instruments 34 (1957) 394.] {{doi|10.1088/0950-7671/34/10/305}}</ref>. Its drawback is a high instability over time; the detector characteristics tend to drift over time, and between cooldowns, requiring periodic recalibrations, increasing the complexity of the imaging system. Due to their instability, InSb detectors are rarely used in [[metrology]] applications. This added complexity is worthwhile where extreme sensitivity is required, e.g. in long-range military thermal imaging systems. InSb detectors also require cooling, as they have to operate at cryogenic temperatures (typically 80 K). However, large arrays (up to 1024x1024 [[pixel]]s) are available. <ref>M. G. Beckett "High Resolution Infrared Imaging", PhD thesis, Cambridge University (1995) [http://www.ast.cam.ac.uk/~optics/tech/mgb_phd/chapter3.htm Chapter 3: Camera]</ref> [[HgCdTe]] and [[platinum silicide|PtSi]] are materials with similar use. |
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==Physics== |
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The [[crystal structure]] is [[zincblende (crystal structure)|zincblende]] with a 0.648 [[metre|nm]] [[lattice constant]]. |
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⚫ | A layer of indium antimonide sandwiched between layers of [[aluminium indium antimonide]] can act as a [[quantum well]]. This approach is studied in order to construct very fast [[transistor]]s. <ref>[http://www.newscientist.com/article.ns?id=dn6997 'Quantum well' transistor promises lean computing](accessdate=April 2009)</ref> [[Bipolar transistor]]s operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s. [[Field effect transistors]] operating at over 200 GHz have been reported more recently ([[Intel]]/[[QinetiQ]]). Some models suggest [[terahertz]] frequencies are achievable with this material. Indium antimonide semiconductors are also capable of operating with voltages under 0.5 V, reducing their power requirements. |
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⚫ | The undoped semiconductor possesses the largest ambient temperature [[electron mobility]] ( |
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[[Alloy]]s which have been studied include [[aluminium indium antimonide|AlInSb]], [[indium gallium antimonide|InGaSb]], and [[indium arsenide antimonide|InAsSb]]. |
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==Growth Methods== |
==Growth Methods== |
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==References== |
==References== |
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{{reflist}} |
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{{Citationstyle|date=September 2007}} |
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<references/> |
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* New infra-red detectors using indium antimonide, D. G. Avery, D. W. Goodwin, and Miss A. E. Rennie, Journal of Scientific Instruments, Vol. 34, Iss. 10, pp. 394-395 (1957). [http://www.iop.org/EJ/abstract/0950-7671/34/10/305] {{doi|10.1088/0950-7671/34/10/305}} |
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==External links== |
==External links== |
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* [http://www.ioffe.rssi.ru/SVA/NSM/Semicond/InSb/ Ioffe Institute semiconductor properties.] |
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* [http://www.onr.navy.mil/sci_tech/information/312_electronics/ncsr/materials/insb.asp National Compound Semiconductor Roadmap] at the [[Office of Naval Research]] |
* [http://www.onr.navy.mil/sci_tech/information/312_electronics/ncsr/materials/insb.asp National Compound Semiconductor Roadmap] at the [[Office of Naval Research]] |
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* [http://www.utdallas.edu/research/cleanroom/safety/msds/documents/Indium_Antimonide.pdf MSDS at University of texas at Dallas] |
* [http://www.utdallas.edu/research/cleanroom/safety/msds/documents/Indium_Antimonide.pdf MSDS at University of texas at Dallas] |
Revision as of 11:44, 30 April 2009
Names | |
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Other names
Indium antimonide
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Identifiers | |
ECHA InfoCard | 100.013.812 |
CompTox Dashboard (EPA)
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Properties | |
InSb | |
Molar mass | 236.578 g/mol |
Appearance | dark grey silvery metal pieces |
Density | 5.77 g/cm3 |
Melting point | 527 °C[1] |
insoluble | |
Structure | |
Zincblende | |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Indium antimonide is a crystalline compound made from the elements indium and antimony. It is a narrow gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1-5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as terahertz radiation source as it is a strong Photo-dember emitter.
History
InSb crystals have been grown by slow cooling from liquid melt at least since 1954 [2].
Physical properties
InSb has the appearance of dark grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and antimony oxide vapors.
InSb is a narrow gap semiconductor with an energy band gap of 0.17 eV at 300 K and 0.23 eV at 80 K . The crystal structure is zincblende with a 0.648 nm lattice constant [1].
The undoped semiconductor possesses the largest ambient temperature electron mobility (78000 cm2/(V*s) [3], electron velocity, and ballistic length (up to 0.7 μm at 300 K) [1] of any known semiconductor except possibly for carbon nanotubes.
Indium antimonide photodiode detectors are photovoltaic, generating electric current when subjected to infrared radiation. InSb has high quantum efficiency (80-90%) [4]. Its drawback is a high instability over time; the detector characteristics tend to drift over time, and between cooldowns, requiring periodic recalibrations, increasing the complexity of the imaging system. Due to their instability, InSb detectors are rarely used in metrology applications. This added complexity is worthwhile where extreme sensitivity is required, e.g. in long-range military thermal imaging systems. InSb detectors also require cooling, as they have to operate at cryogenic temperatures (typically 80 K). However, large arrays (up to 1024x1024 pixels) are available. [5] HgCdTe and PtSi are materials with similar use.
A layer of indium antimonide sandwiched between layers of aluminium indium antimonide can act as a quantum well. This approach is studied in order to construct very fast transistors. [6] Bipolar transistors operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s. Field effect transistors operating at over 200 GHz have been reported more recently (Intel/QinetiQ). Some models suggest terahertz frequencies are achievable with this material. Indium antimonide semiconductors are also capable of operating with voltages under 0.5 V, reducing their power requirements.
Growth Methods
InSb can be grown by solidifying a melt from the liquid state, or epitaxially by liquid phase epitaxy, hot wall epitaxy or molecular beam epitaxy. It can also be grown from organometallic compounds by MOVPE.
Device Applications
- thermal imager detectors using photodiodes or photoelectromagnetic detectors
- magnetic sensors using magnetoresistance or the Hall effect
- fast transistors
References
- ^ a b c Properties of Indium Antimonide (InSb)
- ^ D. G. Avery, D. W. Goodwin, W. D. Lawson and T. S. Moss "Optical and Photo-Electrical Properties of Indium Antimonide" Proc. Phys. Soc. B 67 761-767 (1954) doi:10.1088/0370-1301/67/10/304
- ^ D. L. Rode "Electron Transport in InSb, InAs, and InP" Phys. Rev. B3, 10 (1971) 3287
- ^ D. G. Avery, D. W. Goodwin, and Miss A. E. Rennie "New infra-red detectors using indium antimonide" Journal of Scientific Instruments 34 (1957) 394. doi:10.1088/0950-7671/34/10/305
- ^ M. G. Beckett "High Resolution Infrared Imaging", PhD thesis, Cambridge University (1995) Chapter 3: Camera
- ^ 'Quantum well' transistor promises lean computing(accessdate=April 2009)