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350 nm process

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The 350 nm process refers to the level of MOSFET semiconductor process technology that was reached around the 1993–1996 timeframe, by leading semiconductor companies like Sony, Intel and IBM.

A MOSFET with a 300 nm channel length was fabricated by a research team led by K. Deguchi and Kazuhiko Komatsu at Nippon Telegraph and Telephone (NTT) in 1985.[1]

Products featuring 350 nm manufacturing process

References

  1. ^ Deguchi, K.; Komatsu, Kazuhiko; Miyake, M.; Namatsu, H.; Sekimoto, M.; Hirata, K. (1985). "Step-and-Repeat X-ray/Photo Hybrid Lithography for 0.3 μm Mos Devices". 1985 Symposium on VLSI Technology. Digest of Technical Papers: 74–75. ISBN 4-930813-09-3.
  2. ^ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
  3. ^ "Reality Co-Processor − The Power In Nintendo64" (PDF). Silicon Graphics. Retrieved 18 June 2019.
  4. ^ "Propeller I semiconductor process technology? Is it 350nm or 180nm? - Parallax Forums". Forums.parallax.com. Archived from the original on 2012-07-10. Retrieved 2015-09-13.
Preceded by
600 nm
CMOS manufacturing processes Succeeded by
250 nm