|Jmol-3D images||Image 1|
|Molar mass||194.955 g/mol|
|Melting point||3,090 °C (5,590 °F; 3,360 K)|
|Solubility in water||insoluble|
|Crystal structure||Hexagonal, hP6|
|Space group||P-62m, No. 189|
|EU Index||Not listed|
|Other cations||Vanadium nitride
|Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)|
|(what is: / ?)|
Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
- Akashi, Teruhisa (2005). "Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance". Retrieved 2006-09-02.
|This inorganic compound–related article is a stub. You can help Wikipedia by expanding it.|