Tantalum nitride

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Tantalum nitride
TaNstructure.jpg
TaNstructure2.jpg
Identifiers
CAS number 12033-62-4 YesY
PubChem 83832
EC number 234-788-4
Jmol-3D images Image 1
Properties
Molecular formula TaN
Molar mass 194.955 g/mol
Appearance black crystals
Density 14.3 g/cm3
Melting point 3,090 °C (5,590 °F; 3,360 K)
Solubility in water insoluble
Structure
Crystal structure Hexagonal, hP6
Space group P-62m, No. 189
Hazards
EU Index Not listed
Flash point Non-flammable
Related compounds
Other cations Vanadium nitride
Niobium nitride
Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
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Infobox references

Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.[1]

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