Indium phosphide
| |
| |
| Names | |
|---|---|
| Other names
Indium(III) phosphide
| |
| Identifiers | |
3D model (JSmol)
|
|
| ChemSpider | |
| ECHA InfoCard | 100.040.856 |
PubChem CID
|
|
CompTox Dashboard (EPA)
|
|
| |
| |
| Properties | |
| InP | |
| Molar mass | 145.792 g/mol |
| Appearance | black cubic crystals |
| Density | 4.81 g/cm3, solid |
| Melting point | 1,062 °C (1,944 °F; 1,335 K) |
| Solubility | slightly soluble in acids[1] |
| Band gap | 1.344 eV (300 K; direct) |
| Electron mobility | 5400 cm2/(V·s) (300 K) |
| Thermal conductivity | 0.68 W/(cm·K) (300 K) |
Refractive index (nD)
|
3.1 (infrared); 3.55 (632.8 nm)[2] |
| Structure | |
| Zinc blende | |
a = 5.8687 Å [3]
| |
| Tetrahedral | |
| Thermochemistry | |
Heat capacity (C)
|
45.4 J/(mol·K)[4] |
Std molar
entropy (S⦵298) |
59.8 J/(mol·K) |
Std enthalpy of
formation (ΔfH⦵298) |
-88.7 kJ/mol |
| Hazards | |
| Occupational safety and health (OHS/OSH): | |
Main hazards
|
Toxic, hydrolysis to phosphine |
| Safety data sheet (SDS) | External MSDS |
| Related compounds | |
Other anions
|
Indium nitride Indium arsenide Indium antimonide |
Other cations
|
Aluminium phosphide Gallium phosphide |
Related compounds
|
Indium gallium phosphide Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
| |
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
Manufacturing
.jpg)
Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.[6]
Uses
InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.[7]
It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Chemistry
Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.[8]
References
- ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0-8493-0594-2
- ^ Sheng Chao, Tien; Lee, Chung Len; Lei, Tan Fu (1993), "The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry", Journal of Materials Science Letters, 12 (10): 721, doi:10.1007/BF00626698.
- ^ "Basic Parameters of InP".
- ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 5–20, ISBN 0-8493-0594-2
- ^ Indium Phosphide at HSDB
- ^ InP manufacture
- ^ Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier. April 2005
- ^ Bouarissa, Nadir (July 2011). "Phonons and related crystal properties in indium phosphide under pressure". Physica B: Condensed Matter. 406 (13): 2583–2587. doi:10.1016/j.physb.2011.03.073. Retrieved 22 March 2013.
