Indium nitride

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Indium nitride
Wurtzite polyhedra.png
Other names
Indium(III) nitride
3D model (JSmol)
ECHA InfoCard 100.042.831
Molar mass 128.83 g/mol
Appearance black powder
Density 6.81 g/cm3
Melting point 1,100 °C (2,010 °F; 1,370 K)
Band gap 0.65 eV (300 K)
Electron mobility 3200 cm2/(V.s) (300 K)
Thermal conductivity 45 W/(m.K) (300 K)
Wurtzite (hexagonal)
a = 354.5 pm, c = 570.3 pm [1]
Main hazards Irritant, hydrolysis to ammonia
Safety data sheet External MSDS
Related compounds
Other anions
Indium phosphide
Indium arsenide
Indium antimonide
Other cations
Boron nitride
Aluminium nitride
Gallium nitride
Related compounds
Indium gallium nitride
Indium gallium aluminium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.[2][3]

The bandgap of InN has now been established as ~0.7 eV depending on temperature[4] (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements,[5][6] m*=0.055 m0.

Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV).

Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved.[citation needed] The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.

Thin layers of InN can be grown using metalorganic chemical vapour deposition (MOCVD).[7]


Thin polycrystalline films of indium nitride can be highly conductive and even superconductive at liquid helium temperatures. The superconducting transition temperature Tc depends on each samples film structure and carrier density and varies from 0 K to about 3 K.[7][8] With magnesium doping the Tc can be 3.97 K.[8] The superconductivity persists under high magnetic field (few teslas) that differs from superconductivity in In metal which is quenched by fields of only 0.03 tesla. Nevertheless, the superconductivity is attributed to metallic indium chains[7] or nanoclusters, where the small size increases the critical magnetic field according to the Ginzburg–Landau theory.[9]

See also[edit]


  1. ^ Pichugin, I.G., Tiachala, M. Izv. Akad. Nauk SSSR, Neorg. Mater. 14 (1978) 175.
  2. ^ Veal, T. D.; McConville, C. F. and Schaff, W. J. (Eds.) (2009) Indium Nitride and Related Alloys. CRC Press.
  3. ^ Christen, Juergen; Gil, Bernard (2014). "Group III Nitrides". Physica Status Solidi C: Current Topics in Solid State Physics. 11: 238. Bibcode:2014PSSCR..11..238C. doi:10.1002/pssc.201470041. 
  4. ^ Davydov, V. Yu.; et al. (2002). "Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap" (free download pdf). Physica Status Solidi (b). 229 (3): R1. Bibcode:2002PSSBR.229....1D. doi:10.1002/1521-3951(200202)229:3<r1::aid-pssb99991>;2-o. 
  5. ^ Goiran, Michel; et al. (2010). "Electron cyclotron effective mass in indium nitride". Applied Physics Letters. 96 (5): 052117. Bibcode:2010ApPhL..96e2117G. doi:10.1063/1.3304169. 
  6. ^ Millot, Marius,; et al. (2011). "Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy". Phys. Rev. B. 83 (12): 125204. Bibcode:2011PhRvB..83l5204M. doi:10.1103/PhysRevB.83.125204. 
  7. ^ a b c Inushima, T. (2006). "Electronic structure of superconducting InN". Sci. Techn. Adv. Mater. (free download pdf). 7 (S1): S112. Bibcode:2006STAdM...7S.112I. doi:10.1016/j.stam.2006.06.004. 
  8. ^ a b Tiras, E.; Gunes, M.; Balkan, N.; Airey, R.; Schaff, W. J. (2009). "Superconductivity in heavily compensated Mg-doped InN". Applied Physics Letters. 94 (14): 142108. Bibcode:2009ApPhL..94n2108T. doi:10.1063/1.3116120. 
  9. ^ Komissarova, T. A.; Parfeniev, R. V.; Ivanov, S. V. (2009). "Comment on "Superconductivity in heavily compensated Mg-doped InN" [Appl. Phys. Lett. 94, 142108 (2009)]". Applied Physics Letters. 95 (8): 086101. Bibcode:2009ApPhL..95h6101K. doi:10.1063/1.3212864. 

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