Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
- Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0-8493-0594-2
- Sheng Chao, Tien; Lee, Chung Len; Lei, Tan Fu (1993), "The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry", Journal of Materials Science Letters 12 (10): 721, doi:10.1007/BF00626698.
- Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 5–20, ISBN 0-8493-0594-2
- Indium Phosphide at HSDB
- Bouarissa, Nadir (July 2011). "Phonons and related crystal properties in indium phosphide under pressure". Physica B: Condensed Matter 406 (13): 2583–2587. doi:10.1016/j.physb.2011.03.073. Retrieved 22 March 2013.
- Extensive site on the physical properties of indium phosphide (Ioffe institute)
- InP conference series at IEEE
- Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier (2006 news)