|Molar mass||189.740 g/mol|
|Melting point||942 °C (1,728 °F; 1,215 K)|
|Band gap||0.354 eV (300 K)|
|Electron mobility||40000 cm2/(V*s)|
|Thermal conductivity||0.27 W/(cm*K) (300 K)|
Refractive index (nD)
|Crystal structure||Zinc Blende|
|Lattice constant||a = 6.0583 Å|
Std enthalpy of
|EU classification||Toxic (T)
Dangerous for the environment (N)
|S-phrases||(S1/2), S20/21, S28, S45, S60, S61|
Except where noted otherwise, data is given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
|what is: / ?)(|
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride.
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots. Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.
|This article needs additional citations for verification. (May 2009)|
- Ioffe institute data archive entry
- National Compound Semiconductor Roadmap entry for InAs at ONR web site