Robert H. Dennard
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| Robert H. Dennard | |
 Dr. Robert H. Dennard, IBM Fellow, beside his drawing of a DRAM cell (circuit schematic)
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| Notable awards | IEEE Edison Medal IEEE Medal of Honor |
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Robert Dennard (born September 5, 1932) is an American electrical engineer and inventor.
Dennard was born in Terrell, Texas, U.S.. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines.
In 1968, he invented dynamic random access memory (DRAM). Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 essentially observed that MOSFETs would continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency would improve provided geometric dimensions, voltages, and doping concentrations were consistently scaled such as to maintain the same electric field. This property underlies Moore's Law and the evolution of microelectronics over the last few decades.
[edit] Awards and honors
- 2009 IEEE Medal of Honor
- US National Medal of Technology[1]
- 2001 IEEE Edison Medal [2],
- Received the 2007 Benjamin Franklin Medal in Electrical Engineering from The Franklin Institute.
- National Academy of Engineering (NAE) Charles Stark Draper Prize (2009)
[edit] References
[edit] External links
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