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Early effect: Revision history


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19 December 2023

1 June 2023

  • curprev 00:3400:34, 1 June 2023162.207.202.236 talk 13,511 bytes 0 The original text incorrectly states that transistor collectors are more heavily doped than bases. I'm guessing this was simply a typo. It is common knowledge (among electronics nerds) that in a bipolar junction transistor the collector is less heavily doped than the base, which in turn is less heavily doped than the emitter. It is precisely this less heavy doping which causes the depletion region to grow more on the collector side under reverse bias. undo

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