Indium gallium phosphide: Difference between revisions
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Indium gallium phosphide is a solid solution of [[indium phosphide]] and [[gallium phosphide]]. |
Indium gallium phosphide is a solid solution of [[indium phosphide]] and [[gallium phosphide]]. |
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Ga<sub>0.5</sub>In<sub>0.5</sub>P is a solid solution of special importance, which is almost lattice matched to [[GaAs]]. This allows, in combination with (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>0.5</sub>In<sub>0.5</sub>, the growth of [[Lattice constant|lattice matched]] [[quantum well]]s for red emitting [[Laser diode|semiconductor lasers]], e.g. [[red]] [[Solid-state lighting|emitting]] (650[[1 E-9 m|nm]]) [[RCLED]]s or [[VCSEL]]s for [[Poly(methyl methacrylate)|PMMA]] [[plastic]] [[optical fiber]]s. |
Ga<sub>0.5</sub>In<sub>0.5</sub>P is a solid solution of special importance, which is almost lattice matched to [[GaAs]]. This allows, in combination with (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>0.5</sub>In<sub>0.5</sub>, the growth of [[Lattice constant|lattice matched]] [[quantum well]]s for red emitting [[Laser diode|semiconductor lasers]], e.g., [[red]] [[Solid-state lighting|emitting]] (650[[1 E-9 m|nm]]) [[RCLED]]s or [[VCSEL]]s for [[Poly(methyl methacrylate)|PMMA]] [[plastic]] [[optical fiber]]s. |
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Ga<sub>0.5</sub>In<sub>0.5</sub>P is used as the high energy junction on double and triple junction photovoltaic cells grown on [[GaAs]]. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space=1.35 kW/m<sup>2</sup>) efficiencies in excess of 25%.<ref>{{cite web |url=http://www.cam.uh.edu/MQW%20tech%202p.php |title=Multi-Quantum Well Tandem Solar Cells|publisher=University of Houston Center for Advanced Materials |access-date=2008-11-14 |url-status=dead |archive-url=https://web.archive.org/web/20090510015749/http://www.cam.uh.edu/MQW%20tech%202p.php|author=Alex Freundlich |archive-date=2009-05-10 }}</ref> |
Ga<sub>0.5</sub>In<sub>0.5</sub>P is used as the high energy junction on double and triple junction photovoltaic cells grown on [[GaAs]]. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space = 1.35 kW/m<sup>2</sup>) efficiencies in excess of 25%.<ref>{{cite web |url=http://www.cam.uh.edu/MQW%20tech%202p.php |title=Multi-Quantum Well Tandem Solar Cells|publisher=University of Houston Center for Advanced Materials |access-date=2008-11-14 |url-status=dead |archive-url=https://web.archive.org/web/20090510015749/http://www.cam.uh.edu/MQW%20tech%202p.php|author=Alex Freundlich |archive-date=2009-05-10 }}</ref> |
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A different composition of GaInP, lattice matched to the underlying [[GaInAs]], is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells. |
A different composition of GaInP, lattice matched to the underlying [[GaInAs]], is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells. |
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Revision as of 06:31, 2 May 2024
 | This article needs additional citations for verification. (July 2022) |
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle.
Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide.
Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g., red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.
Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space = 1.35 kW/m2) efficiencies in excess of 25%.[1]
A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.
Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and the electronic and optical properties of the material.
See also
- Gallium phosphide
- Indium(III) phosphide
- Indium gallium nitride
- Indium gallium arsenide
- GaInP/GaAs solar cell
References
- ^ Alex Freundlich. "Multi-Quantum Well Tandem Solar Cells". University of Houston Center for Advanced Materials. Archived from the original on 2009-05-10. Retrieved 2008-11-14.
- E.F. Schubert "Light emitting diodes", ISBN 0-521-53351-1
External links
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